SOJ SRAM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

IDT71V124SA12YG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

MATTE TIN

DUAL

R-PDSO-J32

3.6 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

3.15 V

e3

20.955 mm

12 ns

UPD434004ALE-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

4194304 bit

e0

.01 Amp

15 ns

HM62W8201HJP-10

Renesas Electronics

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

2MX8

2M

0 Cel

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

23.25 mm

10 ns

UPD4361BLA-12

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX1

64K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

65536 bit

e0

.002 Amp

12 ns

UPD431016LLE-A17

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

180 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

e0

.005 Amp

17 ns

71256L45PK

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.4

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

Not Qualified

262144 bit

e0

.00012 Amp

45 ns

UPD444016LE-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

180 mA

262144 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

4194304 bit

e0

.01 Amp

15 ns

UPD421002LA-80

Renesas Electronics

STATIC COLUMN DRAM

COMMERCIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

70 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

SRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

80 ns

71V416S15YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J44

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

40

260

.02 Amp

28.575 mm

15 ns

7164S100YGB

Renesas Electronics

STANDARD SRAM

MILITARY

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

MIL-STD-883 Class B

J BEND

PARALLEL

ASYNCHRONOUS

190 mA

8192 words

5

8

SMALL OUTLINE

1.27 mm

125 Cel

8KX8

8K

-55 Cel

Matte Tin (Sn)

DUAL

R-PDSO-J28

5.5 V

3.556 mm

7.5184 mm

Not Qualified

65536 bit

4.5 V

e3

30

260

17.9324 mm

100 ns

HM6208HJP-45

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

15.63 mm

45 ns

R1RP0408DGE-2PI#B0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-J36

2

5.5 V

3.55 mm

10.16 mm

4194304 bit

4.5 V

23.49 mm

12 ns

IDT7112420YI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

TIN LEAD

DUAL

R-PDSO-J32

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

20.955 mm

20 ns

R1RP0408DGE-2LR

Renesas Electronics

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

DUAL

R-PDSO-J36

2

5.5 V

3.55 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

20

245

23.49 mm

12 ns

71V124SA15TYG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J32

3

3.6 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

20.955 mm

15 ns

HM62W4100HLJP-15

Renesas Electronics

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

1048576 words

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

2 V

0 Cel

DUAL

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

TTL COMPATIBLE INPUTS/OUTPUTS

.0003 Amp

20.71 mm

15 ns

HM621100AJP-20

Renesas Electronics

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ28,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX1

1M

4.5 V

0 Cel

DUAL

R-PDSO-J28

5.5 V

Not Qualified

1048576 bit

4.5 V

.002 Amp

20 ns

HM6289LJP-35

Renesas Electronics

CACHE SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16384 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

16KX4

16K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

15.63 mm

35 ns

HM62D932LJP-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

5

9

SMALL OUTLINE

1.27 mm

70 Cel

32KX9

32K

0 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

7.62 mm

Not Qualified

294912 bit

4.5 V

ADDRESS LATCH

20.71 mm

20 ns

UPD46258LA-7

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

190 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

262144 bit

e0

.05 Amp

7 ns

IDT7164L25YG8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

90 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

8KX8

8K

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

Not Qualified

65536 bit

4.5 V

e3

40

260

.00006 Amp

17.9324 mm

25 ns

71V416S12YG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

180 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

MATTE TIN

DUAL

R-PDSO-J44

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

260

.02 Amp

28.575 mm

12 ns

HM628HLJP-45

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

15.63 mm

45 ns

HM62W1664HBJP-30

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

90 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

.035 Amp

30 ns

71V416S12YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

180 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J44

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

40

260

.02 Amp

28.575 mm

12 ns

KM641003BLJ-8

Samsung

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J32

3

Not Qualified

1048576 bit

e0

.0007 Amp

8 ns

K6R1008V1A-JC120

Samsung

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

DUAL

R-PDSO-J32

Not Qualified

1048576 bit

.005 Amp

12 ns

KM616V4002CJI-20

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

145 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.01 Amp

28.58 mm

20 ns

KM64V4002BLIJ-12

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

4

SMALL OUTLINE

1.27 mm

85 Cel

1MX4

1M

-40 Cel

DUAL

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

TTL COMPATIBLE INPUTS/OUTPUTS

20.96 mm

12 ns

K6R1016C1C-JL20T

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

90 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

e0

.0003 Amp

20 ns

KM6165ALJ-25

Samsung

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

65536 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX1

64K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J24

3

Not Qualified

65536 bit

e0

.00005 Amp

25 ns

KM69B257AJ-8

Samsung

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

185 mA

32768 words

COMMON

5

5

9

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

32KX9

32K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J32

5.5 V

3.38 mm

7.62 mm

Not Qualified

294912 bit

4.5 V

e0

YES

20.73 mm

8 ns

K6R1008C1C-JL10T

Samsung

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

80 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

1048576 bit

e0

.0003 Amp

10 ns

KM64V4002BJI-12

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

1048576 words

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

1MX4

1M

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.01 Amp

20.96 mm

12 ns

K6R1004C1C-JC120

Samsung

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

70 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

4.5 V

0 Cel

DUAL

R-PDSO-J32

Not Qualified

1048576 bit

.005 Amp

12 ns

KM6164002J-25

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

220 mA

262144 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

4.5 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

YES

.01 Amp

28.58 mm

25 ns

KM64BV4002J-13

Samsung

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

1048576 words

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

3 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3.13 V

TTL COMPATIBLE INPUTS/OUTPUTS

e0

YES

.03 Amp

20.96 mm

13 ns

KM64V4002CLJ-10

Samsung

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

1048576 words

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.0007 Amp

20.96 mm

10 ns

K6R1016V1C-JP120

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

95 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

2 V

-40 Cel

DUAL

R-PDSO-J44

3

Not Qualified

1048576 bit

240

.0003 Amp

12 ns

K6R1016V1C-JL12T

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

95 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

e0

.0003 Amp

12 ns

KM644002AIJ-17

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

85 Cel

1MX4

1M

-40 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

20.96 mm

17 ns

K6R1016V1C-JI20

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

90 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e0

.005 Amp

28.58 mm

20 ns

KM6164002AJI-20

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

262144 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

4.5 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

BYTE READ/WRITE; TTL COMPATIBLE INPUTS/OUTPUTS

e0

.01 Amp

28.58 mm

20 ns

KM641002BJI-10

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

20.96 mm

10 ns

KM6164002BIJ-15

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

25.58 mm

15 ns

KM691001J-25

Samsung

STANDARD SRAM

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

9

SMALL OUTLINE

1.27 mm

128KX9

128K

DUAL

R-PDSO-J32

3.75 mm

10.16 mm

Not Qualified

1179648 bit

20.96 mm

25 ns

KM6161002CLJ-15

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

93 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

.0005 Amp

28.58 mm

15 ns

K6R1016C1C-JP12T

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

95 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

2 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

e0

.0003 Amp

12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.