Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-J32 |
3.6 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
20.955 mm |
12 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
170 mA |
1048576 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J32 |
Not Qualified |
4194304 bit |
e0 |
.01 Amp |
15 ns |
||||||||||||||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3.3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-J36 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
23.25 mm |
10 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J24 |
Not Qualified |
65536 bit |
e0 |
.002 Amp |
12 ns |
||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
e0 |
.005 Amp |
17 ns |
||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.4 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
Not Qualified |
262144 bit |
e0 |
.00012 Amp |
45 ns |
||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J44 |
Not Qualified |
4194304 bit |
e0 |
.01 Amp |
15 ns |
||||||||||||||||||||||
Renesas Electronics |
STATIC COLUMN DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
70 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J20 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
80 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
170 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J44 |
3 |
3.6 V |
3.683 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
40 |
260 |
.02 Amp |
28.575 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-STD-883 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
190 mA |
8192 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
17.9324 mm |
100 ns |
|||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
64KX4 |
64K |
0 Cel |
DUAL |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
15.63 mm |
45 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDSO-J36 |
2 |
5.5 V |
3.55 mm |
10.16 mm |
4194304 bit |
4.5 V |
23.49 mm |
12 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-J32 |
5.5 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
20.955 mm |
20 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
130 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ36,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
DUAL |
R-PDSO-J36 |
2 |
5.5 V |
3.55 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20 |
245 |
23.49 mm |
12 ns |
|||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
.01 Amp |
20.955 mm |
15 ns |
||||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
2 V |
0 Cel |
DUAL |
R-PDSO-J32 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
TTL COMPATIBLE INPUTS/OUTPUTS |
.0003 Amp |
20.71 mm |
15 ns |
|||||||||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ28,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
4.5 V |
0 Cel |
DUAL |
R-PDSO-J28 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
.002 Amp |
20 ns |
|||||||||||||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
16KX4 |
16K |
0 Cel |
DUAL |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
15.63 mm |
35 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
32KX9 |
32K |
0 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
294912 bit |
4.5 V |
ADDRESS LATCH |
20.71 mm |
20 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
PARALLEL |
ASYNCHRONOUS |
190 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J32 |
Not Qualified |
262144 bit |
e0 |
.05 Amp |
7 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
40 |
260 |
.00006 Amp |
17.9324 mm |
25 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
3 V |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-J44 |
3 |
3.6 V |
3.683 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
260 |
.02 Amp |
28.575 mm |
12 ns |
|||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
64KX4 |
64K |
0 Cel |
DUAL |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
15.63 mm |
45 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
.035 Amp |
30 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J44 |
3 |
3.6 V |
3.683 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
40 |
260 |
.02 Amp |
28.575 mm |
12 ns |
||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J32 |
3 |
Not Qualified |
1048576 bit |
e0 |
.0007 Amp |
8 ns |
|||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
DUAL |
R-PDSO-J32 |
Not Qualified |
1048576 bit |
.005 Amp |
12 ns |
||||||||||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
145 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-J44 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
.01 Amp |
28.58 mm |
20 ns |
||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3.3 |
4 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
1MX4 |
1M |
-40 Cel |
DUAL |
R-PDSO-J32 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
TTL COMPATIBLE INPUTS/OUTPUTS |
20.96 mm |
12 ns |
|||||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
e0 |
.0003 Amp |
20 ns |
||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
3 |
Not Qualified |
65536 bit |
e0 |
.00005 Amp |
25 ns |
|||||||||||||||||||||
Samsung |
CACHE SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
185 mA |
32768 words |
COMMON |
5 |
5 |
9 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX9 |
32K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J32 |
5.5 V |
3.38 mm |
7.62 mm |
Not Qualified |
294912 bit |
4.5 V |
e0 |
YES |
20.73 mm |
8 ns |
||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J32 |
Not Qualified |
1048576 bit |
e0 |
.0003 Amp |
10 ns |
||||||||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
1MX4 |
1M |
3 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-J32 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
.01 Amp |
20.96 mm |
12 ns |
||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
70 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
4.5 V |
0 Cel |
DUAL |
R-PDSO-J32 |
Not Qualified |
1048576 bit |
.005 Amp |
12 ns |
||||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
220 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J44 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
YES |
.01 Amp |
28.58 mm |
25 ns |
||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
BICMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
3 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J32 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3.13 V |
TTL COMPATIBLE INPUTS/OUTPUTS |
e0 |
YES |
.03 Amp |
20.96 mm |
13 ns |
|||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J32 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
.0007 Amp |
20.96 mm |
10 ns |
||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
95 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
DUAL |
R-PDSO-J44 |
3 |
Not Qualified |
1048576 bit |
240 |
.0003 Amp |
12 ns |
||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
95 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
e0 |
.0003 Amp |
12 ns |
||||||||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
1MX4 |
1M |
-40 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20.96 mm |
17 ns |
||||||||||||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-J44 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e0 |
.005 Amp |
28.58 mm |
20 ns |
||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
200 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
4.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J44 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
BYTE READ/WRITE; TTL COMPATIBLE INPUTS/OUTPUTS |
e0 |
.01 Amp |
28.58 mm |
20 ns |
|||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
20.96 mm |
10 ns |
||||||||||||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDSO-J44 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
25.58 mm |
15 ns |
||||||||||||||||||||||||||
Samsung |
STANDARD SRAM |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
128KX9 |
128K |
DUAL |
R-PDSO-J32 |
3.75 mm |
10.16 mm |
Not Qualified |
1179648 bit |
20.96 mm |
25 ns |
|||||||||||||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
93 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J44 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0005 Amp |
28.58 mm |
15 ns |
||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
95 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
e0 |
.0003 Amp |
12 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.