SOJ SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

K6E0804C1C-JC12T

Samsung

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

262144 bit

e0

.002 Amp

12 ns

K6R1008C1B-JI12

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

.01 Amp

20.96 mm

12 ns

KM6164002AJI-15

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

210 mA

262144 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

4.5 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

BYTE READ/WRITE; TTL COMPATIBLE INPUTS/OUTPUTS

e0

.01 Amp

28.58 mm

15 ns

KM641003AJI-12

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX4

256K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J32

3

Not Qualified

1048576 bit

e0

.008 Amp

12 ns

K6R1008V1A-JI200

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

DUAL

R-PDSO-J32

Not Qualified

1048576 bit

.005 Amp

20 ns

KM616V1002CLIJ-20

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

3.3

16

SMALL OUTLINE

1.27 mm

85 Cel

64KX16

64K

-40 Cel

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

3 V

28.58 mm

20 ns

K6R1016V1A-JI12

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

3.3

16

SMALL OUTLINE

1.27 mm

85 Cel

64KX16

64K

-40 Cel

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

3 V

28.58 mm

12 ns

K6R1008C1A-JI20

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

20.96 mm

20 ns

K6R1008C1D-JI12

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

55 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

.005 Amp

20.96 mm

12 ns

KM6466BLJ-20L

Samsung

STANDARD SRAM

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16384 words

5

4

SMALL OUTLINE

1.27 mm

16KX4

16K

DUAL

R-PDSO-J24

3.75 mm

7.62 mm

Not Qualified

65536 bit

15.88 mm

20 ns

KM616V1002CLJ-15

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

93 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e0

.0003 Amp

28.58 mm

15 ns

K6R1008C1C-JP12

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

75 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

.0003 Amp

20.96 mm

12 ns

K6R1016V1C-JP150

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

93 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

2 V

-40 Cel

DUAL

R-PDSO-J44

3

Not Qualified

1048576 bit

240

.0003 Amp

15 ns

K6E0804C1E-JC10

Samsung

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

70 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

TTL COMPATIBLE I/O

e0

.002 Amp

18.42 mm

10 ns

KM6161002BLJ-10

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

190 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

e0

.0007 Amp

10 ns

KM6161002BIJ-8

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE

1.27 mm

85 Cel

64KX16

64K

-40 Cel

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

25.58 mm

8 ns

KM64V1003BJ-1000

Samsung

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

3.3

4

SMALL OUTLINE

1.27 mm

70 Cel

256KX4

256K

0 Cel

DUAL

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

1048576 bit

3 V

20.95 mm

10 ns

K6R1008V1A-JI150

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

135 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

DUAL

R-PDSO-J32

Not Qualified

1048576 bit

.005 Amp

15 ns

K6E0808V1E-JL15

Samsung

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

3.6 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

3 V

TTL COMPATIBLE I/O

e0

.0005 Amp

18.42 mm

15 ns

KM6164002AJE-15

Samsung

STANDARD SRAM

OTHER

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

210 mA

262144 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

4.5 V

-25 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

BYTE READ/WRITE; TTL COMPATIBLE INPUTS/OUTPUTS

e0

.01 Amp

28.58 mm

15 ns

KM64258EJ-15

Samsung

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

70 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

e0

.002 Amp

18.42 mm

15 ns

KM64V4002AJ-12

Samsung

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

1048576 words

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

3 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

YES

.01 Amp

20.96 mm

12 ns

K6E0808V1E-JP20

Samsung

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

70 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J28

3.6 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

3 V

TTL COMPATIBLE I/O

e0

.0005 Amp

18.42 mm

20 ns

K6R1008V1D-JI10

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

75 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e0

.005 Amp

20.96 mm

10 ns

KM64B258J-10

Samsung

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

175 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

4.5 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

5.5 V

3.56 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

e0

YES

.008 Amp

17.91 mm

10 ns

KM616BV4002J-13

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

235 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3.13 V

TTL COMPATIBLE INPUTS/OUTPUTS

e0

YES

.03 Amp

28.58 mm

13 ns

KM616V1002BJI-80

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

3.3

16

SMALL OUTLINE

1.27 mm

85 Cel

64KX16

64K

-40 Cel

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

3 V

28.58 mm

8 ns

KM616V1002BLJ-80

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

3.3

16

SMALL OUTLINE

1.27 mm

70 Cel

64KX16

64K

0 Cel

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

3 V

28.58 mm

8 ns

KM6161002AJI-15

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

185 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

.008 Amp

28.58 mm

15 ns

K6E0808C1E-JL10T

Samsung

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

80 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

262144 bit

e0

.0005 Amp

10 ns

K6R1008C1C-JP15

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

73 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

.0003 Amp

20.96 mm

15 ns

KM616V4002CJ-12

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

TTL COMPATIBLE INPUTS AND OUTPUTS

e0

.01 Amp

28.58 mm

12 ns

KM64258EJ-12

Samsung

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

70 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

e0

.002 Amp

18.42 mm

12 ns

KM616V1002CLJ-10

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

3.3

16

SMALL OUTLINE

1.27 mm

70 Cel

64KX16

64K

0 Cel

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

3 V

28.58 mm

10 ns

K6R1004C1C-JC12T

Samsung

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

70 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

1048576 bit

e0

.005 Amp

12 ns

K6R1008C1D-KI10TR

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

20.95 mm

10 ns

KM641002BJI-8

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

20.96 mm

8 ns

KM616V1002CJ-10

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

3.3

16

SMALL OUTLINE

1.27 mm

70 Cel

64KX16

64K

0 Cel

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

3 V

28.58 mm

10 ns

KM64V258CJ-20

Samsung

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

60 mA

65536 words

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

3.6 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

3 V

e0

YES

.0001 Amp

18.42 mm

20 ns

K6R1004C1C-JP10

Samsung

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

75 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX4

256K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

.0003 Amp

20.96 mm

10 ns

KM6164002CJE-15

Samsung

STANDARD SRAM

OTHER

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

180 mA

262144 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

4.5 V

-25 Cel

TIN LEAD

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

.01 Amp

28.58 mm

15 ns

K6R1016C1A-JI20

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE

1.27 mm

85 Cel

64KX16

64K

-40 Cel

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

28.58 mm

20 ns

KM616V1002CLJI-20

Samsung

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

90 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e0

.0003 Amp

28.58 mm

20 ns

K6R1004C1C-JC10T

Samsung

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

75 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

1048576 bit

e0

.005 Amp

10 ns

KM641001J-20

Samsung

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

YES

.002 Amp

18.42 mm

20 ns

KM64V1003ALJ-15

Samsung

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

125 mA

262144 words

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J32

3

Not Qualified

1048576 bit

e0

.0005 Amp

15 ns

KM64B261AJ-8

Samsung

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

4.75 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

5.25 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.75 V

e0

YES

.02 Amp

18.42 mm

8 ns

K6R1016V1D-KC10

Samsung

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

TIN SILVER COPPER

DUAL

R-PDSO-J44

3

Not Qualified

1048576 bit

e1

260

.005 Amp

10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.