SOJ SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6R1016V1C-JC20	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0				.005 Amp	28.58 mm	20 ns
KM64V4002CJI-10	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	20.96 mm	10 ns
K6R1016V1C-JI100	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		DUAL		R-PDSO-J44	3				Not Qualified	1048576 bit					240		.005 Amp		10 ns
K6E0804C1E-JC150	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel		DUAL		R-PDSO-J28		5.5 V	3.76 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE I/O					.002 Amp	18.42 mm	15 ns
KM6164002LJ-20	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	240 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS AND OUTPUTS	e0			YES	.0002 Amp	28.58 mm	20 ns
KM6164002CJI-10	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	28.58 mm	10 ns
KM641005J-25	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			NO	.002 Amp	20.96 mm	25 ns
K6R1004V1C-JL12T	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0				.0003 Amp		12 ns
K6R1008C1C-JC12	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	75 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.005 Amp	20.96 mm	12 ns
K6R1016V1D-KI080	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE			1.27 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-J44	3	3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V							25.58 mm	8 ns
KM6161002CJ-1500	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		64KX16	64K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							28.58 mm	15 ns
KM616V1002BLJI-120	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE			1.27 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V							25.58 mm	12 ns
KM641003CJ-10	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K		0 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							20.96 mm	10 ns
KM64B1003J-12	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	145 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.96 mm	12 ns
K6R1008C1D-KC100	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-J32	2	5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							20.95 mm	10 ns
K6R1004C1C-JL10	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.0003 Amp	20.96 mm	10 ns
K6R1004V1C-JL20T	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0				.0003 Amp		20 ns
KM616V4002BLJI-15	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	220 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES	.0007 Amp	28.58 mm	15 ns
KM6161002AJ-15	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	210 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS/3.3V GTL COMPATIBLE I/O	e0			YES	.01 Amp	28.58 mm	15 ns
K6E0808C1E-JC15T00	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDSO-J28		5.5 V	3.76 mm	7.62 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.002 Amp	18.41 mm	15 ns
KM616V1002ALJI-20	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0				.0005 Amp		20 ns
KM61257AJ-25	Samsung	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.05 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	BATTERY BACKUP	e0			NO	.002 Amp	15.875 mm	25 ns
KM64V258CJ-17	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.76 mm	7.62 mm	Not Qualified	262144 bit	3 V		e0			YES	.0001 Amp	18.42 mm	17 ns
KM641001AJ-20000	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K		0 Cel		DUAL		R-PDSO-J28		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS/3.3V GTL COMPATIBLE I/O						18.42 mm	20 ns
KM6164002CJ-20	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS AND OUTPUTS	e0				.01 Amp	28.58 mm	20 ns
KM6161002CIJ-12	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							28.58 mm	12 ns
K6R1008V1A-JC150	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	135 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel		DUAL		R-PDSO-J32					Not Qualified	1048576 bit							.005 Amp		15 ns
KM616V1002ALJ-12	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0				.0005 Amp		12 ns
KM616V1002ALJI-17	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	165 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0				.0005 Amp		17 ns
K6R1016C1B-JC8T	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0				.01 Amp		8 ns
K6R1008C1B-JI8	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0				.01 Amp		8 ns
KM6164002CLJ-10	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS AND OUTPUTS						25.58 mm	10 ns
KM644002BJI-1500	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		1MX4	1M		-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							20.95 mm	15 ns
K6E0808C1C-JC15	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.76 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	TTL COMPATIBLE I/O	e0				.002 Amp	18.42 mm	15 ns
K6R1004V1C-JL10	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0				.0003 Amp		10 ns
K6R1004V1C-JP15	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	68 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0				.0003 Amp		15 ns
K6R1016C1A-JC150	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	185 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel		DUAL		R-PDSO-J44	1	5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V						.008 Amp	28.58 mm	15 ns
K6R1016C1C-JC150	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel		DUAL		R-PDSO-J44	3				Not Qualified	1048576 bit					240		.005 Amp		15 ns
K6R1016C1C-JC10T	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J44					Not Qualified	1048576 bit			e0				.005 Amp		10 ns
K6R1004C1B-JC08	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		256KX4	256K		0 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							20.96 mm	8 ns
K6R1016V1A-JC12	Samsung	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		16	SMALL OUTLINE			1.27 mm	70 Cel		64KX16	64K		0 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V							28.58 mm	12 ns
K6E0808V1E-JL20	Samsung	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28		3.6 V	3.76 mm	7.62 mm	Not Qualified	262144 bit	3 V	TTL COMPATIBLE I/O	e0				.0005 Amp	18.42 mm	20 ns
KM6161002CIJ-120	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V							28.58 mm	12 ns
KM64B66J-20	Samsung	STANDARD SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.05 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.008 Amp	15.875 mm	20 ns
K6R1004V1B-JC12	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0				.005 Amp	20.96 mm	12 ns
K6E1008C1B-JC15T	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0				.005 Amp		15 ns
K6R1008V1B-JL8T	Samsung	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0				.0004 Amp		8 ns
KM644002CJE-12	Samsung	STANDARD SRAM	OTHER	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	4.5 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.01 Amp	20.96 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.