Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
20 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
105 mA |
4096 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX4 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
NO |
12.825 mm |
25 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
77 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
Not Qualified |
65536 bit |
e0 |
.014 Amp |
35 ns |
||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
20 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
4096 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX4 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
NO |
12.825 mm |
40 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
NO |
.014 Amp |
15.418 mm |
35 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
3.68 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
YES |
17.935 mm |
17 ns |
||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e0 |
YES |
.00007 Amp |
25 ns |
|||||||||||||||||
STMicroelectronics |
CACHE TAG SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
8192 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e0 |
YES |
.15 Amp |
25 ns |
|||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX4 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
Not Qualified |
262144 bit |
e0 |
.01 Amp |
30 ns |
||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.518 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
YES |
.001 Amp |
17.932 mm |
20 ns |
||||||||||||||
STMicroelectronics |
CACHE TAG SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
8192 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.25 V |
3.556 mm |
7.518 mm |
Not Qualified |
65536 bit |
4.75 V |
OPEN-DRAIN MATCH OUTPUT; FLASH CLEAR |
e0 |
YES |
.16 Amp |
17.932 mm |
20 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
175 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J32 |
Not Qualified |
1048576 bit |
e0 |
.0005 Amp |
15 ns |
||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX4 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
NO |
.01 Amp |
15.418 mm |
35 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J32 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.001 Amp |
17 ns |
|||||||||||||||||
STMicroelectronics |
CACHE TAG SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX4 |
4K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.25 V |
3.556 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.75 V |
TOTEM-POLE MATCH OUTPUT; FLASH CLEAR |
e0 |
YES |
.12 Amp |
15.418 mm |
20 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
YES |
.01 Amp |
15.418 mm |
10 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
Not Qualified |
65536 bit |
e0 |
.00007 Amp |
15 ns |
||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
20 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
4096 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX4 |
4K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
NO |
12.825 mm |
50 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
70 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
NO |
.014 Amp |
15.418 mm |
35 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
NO |
.01 Amp |
15.418 mm |
15 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
DIP28,.4 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
3.68 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
NO |
.004 Amp |
17.935 mm |
25 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
NO |
.01 Amp |
15.418 mm |
15 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX4 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
Not Qualified |
262144 bit |
e0 |
.01 Amp |
45 ns |
||||||||||||||||||||||
STMicroelectronics |
CACHE TAG SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
8192 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.25 V |
3.556 mm |
7.518 mm |
Not Qualified |
65536 bit |
4.75 V |
TOTEM-POLE MATCH OUTPUT |
e0 |
YES |
.16 Amp |
17.932 mm |
25 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
110 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
Not Qualified |
65536 bit |
e0 |
.014 Amp |
45 ns |
||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
262144 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
NO |
.01 Amp |
15.418 mm |
30 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.518 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
YES |
.001 Amp |
17.932 mm |
12 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e0 |
YES |
.00007 Amp |
25 ns |
|||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e0 |
NO |
.00007 Amp |
20 ns |
|||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
32768 words |
COMMON |
5 |
5 |
9 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX9 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J32 |
5.5 V |
Not Qualified |
294912 bit |
4.5 V |
e0 |
YES |
.001 Amp |
15 ns |
|||||||||||||||||
STMicroelectronics |
CACHE TAG SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
8192 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.25 V |
3.556 mm |
7.518 mm |
Not Qualified |
65536 bit |
4.75 V |
TOTEM-POLE MATCH OUTPUT |
e0 |
.16 Amp |
17.932 mm |
20 ns |
||||||||||||||||||
STMicroelectronics |
CACHE TAG SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
8192 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.25 V |
3.556 mm |
7.518 mm |
Not Qualified |
65536 bit |
4.75 V |
OPEN DRAIN MATCH OUTPUT |
e0 |
.16 Amp |
17.932 mm |
20 ns |
||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
Not Qualified |
65536 bit |
e0 |
.01 Amp |
20 ns |
||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
77 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
Not Qualified |
65536 bit |
e0 |
.014 Amp |
45 ns |
||||||||||||||||||||||
STMicroelectronics |
CACHE TAG SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
8192 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.25 V |
3.556 mm |
7.518 mm |
Not Qualified |
65536 bit |
4.75 V |
OPEN-DRAIN MATCH OUTPUT; FLASH CLEAR |
e0 |
YES |
.16 Amp |
17.932 mm |
25 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
SEPARATE |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e0 |
YES |
.00007 Amp |
20 ns |
|||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-J32 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
YES |
55 ns |
||||||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.518 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
YES |
.01 Amp |
17.932 mm |
10 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
Not Qualified |
65536 bit |
e0 |
.01 Amp |
20 ns |
||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e0 |
YES |
.00007 Amp |
25 ns |
|||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
NO |
.01 Amp |
15.418 mm |
12 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
110 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
YES |
.014 Amp |
15.418 mm |
30 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX4 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
NO |
.01 Amp |
15.418 mm |
30 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
65536 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX4 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
Not Qualified |
262144 bit |
e0 |
.01 Amp |
25 ns |
||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
70 mA |
65536 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX1 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.5 V |
3.556 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
NO |
.014 Amp |
15.418 mm |
45 ns |
||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
110 mA |
16384 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
16KX4 |
16K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
Not Qualified |
65536 bit |
e0 |
.014 Amp |
55 ns |
||||||||||||||||||||||
STMicroelectronics |
CACHE TAG SRAM |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
8192 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
8KX8 |
8K |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J28 |
Not Qualified |
65536 bit |
e0 |
17 ns |
||||||||||||||||||||||||||||||||
STMicroelectronics |
CACHE TAG SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4KX4 |
4K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J24 |
5.25 V |
3.556 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.75 V |
TOTEM-POLE MATCH OUTPUT; FLASH CLEAR |
e0 |
YES |
.12 Amp |
15.418 mm |
25 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
Not Qualified |
65536 bit |
e0 |
.01 Amp |
20 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.