SOJ SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
GVT72256A16J-15I	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	15 ns
CY7S1049G30-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm		10.16 mm		4194304 bit	2.2 V							23.495 mm	10 ns
GVT72256A16J-12LI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	12 ns
GVT72256A16J-10L	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	10 ns
GVT72024A8J-20I	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	110 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.44		1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-J32		5.5 V	3.68 mm		10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	20 ns
CY7B161A-45VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0						45 ns
CY7B161A-35VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0						35 ns
CY7B161A-15VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	115 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0						15 ns
GVT72256A16J-15LI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	15 ns
CY7B162A-15VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	115 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0						15 ns
GVT72256A16J-10LI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	10 ns
GVT72256A16J-12	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm		4194304 bit	4.5 V							28.6 mm	12 ns
CY7B162A-20VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0						20 ns
CY7B161A-20VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0						20 ns
CY7B162A-35VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	65536 bit			e0						35 ns
CY7S1049GE30-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm		10.16 mm		4194304 bit	2.2 V							23.495 mm	10 ns
CY7C1049G-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J36	3	5.5 V	3.7592 mm		10.16 mm		4194304 bit	4.5 V		e4	30	260			23.495 mm	10 ns
CY7C1019D-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.003 Amp	20.955 mm	10 ns
CY7C1399BN-12VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	3.6 V	3.556 mm		7.5057 mm	Not Qualified	262144 bit	3 V		e4	30	260		.0005 Amp	17.907 mm	12 ns
CY7C1049GN-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	5		8	SMALL OUTLINE	SOJ36,.44		1.27 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J36	3	5.5 V	3.7592 mm		10.16 mm		4194304 bit	4.5 V				260	YES	.008 Amp	23.495 mm	10 ns
CY7C107D-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	85 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	PURE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V			30	260		.003 Amp	18.415 mm	10 ns
CY7C1041GE18-15VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		2.2 V	3.7592 mm		10.16 mm		4194304 bit	1.65 V							28.575 mm	15 ns
CY7C109D-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.003 Amp	20.955 mm	10 ns
CY7C199CN-12VXA	Infineon Technologies	STANDARD SRAM		28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34		1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel		DUAL	1	R-PDSO-J28		5.5 V	3.556 mm		7.5057 mm		262144 bit	4.5 V					YES	.01 Amp	17.907 mm	12 ns
CY7C1019DL-12VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-J32	3					Not Qualified	1048576 bit			e4	40	260		.0012 Amp		12 ns
CY7C106B-35VCT	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	125 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	2 V	0 Cel		DUAL		R-PDSO-J28						Not Qualified	1048576 bit							.00025 Amp		35 ns
CY7C1041GN30-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	SMALL OUTLINE	SOJ44,.44		1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J44	3	3.6 V	3.7592 mm		10.16 mm		4194304 bit	2.2 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C1049GN-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	5		8	SMALL OUTLINE	SOJ36,.44		1.27 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J36	3	5.5 V	3.7592 mm		10.16 mm		4194304 bit	4.5 V				260	YES	.008 Amp	23.495 mm	10 ns
CY7C1019DL-12VXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-J32	3					Not Qualified	1048576 bit			e4	40	260		.0012 Amp		12 ns
CY7C1021DV33-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	3.63 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e4	40	260		.003 Amp	28.575 mm	10 ns
CY7C1020V33-20VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44						Not Qualified	524288 bit			e0				.001 Amp		20 ns
CY7C1009D-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	5.5 V	3.556 mm		7.5819 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.003 Amp	20.828 mm	10 ns
CY7C107D-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	85 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.003 Amp	18.415 mm	10 ns
CY7C1020D-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	80 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	32KX16	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3			100 MHz		Not Qualified	524288 bit			e4	40	260		.003 Amp		10 ns
CY7C1041GN30-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	SMALL OUTLINE	SOJ44,.44		1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J44	3	3.6 V	3.7592 mm		10.16 mm		4194304 bit	2.2 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C1010DV33-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J36	3	3.6 V	2.75 mm		10.16 mm	Not Qualified	2097152 bit	3 V		e4	40	260		.01 Amp	23.495 mm	10 ns
CY7C1049G-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-J36		5.5 V	3.7592 mm		10.16 mm		4194304 bit	4.5 V							23.495 mm	10 ns
CY7C1041GN-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	5		16	SMALL OUTLINE	SOJ44,.44		1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm		4194304 bit	4.5 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C1019DL-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-J32	3					Not Qualified	1048576 bit			e4	40	260		.0012 Amp		10 ns
CY7C1019DL-10VXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-J32	3					Not Qualified	1048576 bit			e4	40	260		.0012 Amp		10 ns
CY7C1020V33L-20VC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44						Not Qualified	524288 bit			e0				.0001 Amp		20 ns
CY7C1020D-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	32KX16	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm	100 MHz	10.16 mm	Not Qualified	524288 bit	4.5 V		e4	40	260		.003 Amp	28.575 mm	10 ns
CY7C185-35VXC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		8KX8	8K		0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5 mm	Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN	e4					17.907 mm	35 ns
CY7C1019D-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.003 Amp	20.955 mm	10 ns
CY7C1041GN-10VXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	5		16	SMALL OUTLINE	SOJ44,.44		1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm		4194304 bit	4.5 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C197BN-15VC	Infineon Technologies	STANDARD SRAM		24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	262144 words	SEPARATE	5		1	SMALL OUTLINE	SOJ24,.34		1.27 mm	70 Cel	3-STATE	256KX1	256K	4.5 V	0 Cel		DUAL	1	R-PDSO-J24		5.5 V	3.55 mm		7.505 mm		262144 bit	4.5 V					NO	.01 Amp	15.365 mm	15 ns
CY7C1009B-15VI	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.34		1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.556 mm		7.5819 mm		1048576 bit	4.5 V					YES	.01 Amp	20.828 mm	15 ns
CY7C1009B-12VC	Infineon Technologies	STANDARD SRAM		32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	131072 words	COMMON	5		8	SMALL OUTLINE	SOJ32,.34		1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-J32		5.5 V	3.556 mm		7.5819 mm		1048576 bit	4.5 V					YES	.01 Amp	20.828 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.