SOJ SRAM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

TC55V16256J-15

Toshiba

CACHE SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

190 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J44

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.004 Amp

28.58 mm

15 ns

TC55VZM208AJGI08

Toshiba

CACHE SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-J36

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

23.5 mm

8 ns

TC55V328BJ-15

Toshiba

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

DUAL

1

R-PDSO-J28

3.6 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

3 V

YES

.0003 Amp

18.42 mm

15 ns

TC55VZM216AJJI08

Toshiba

CACHE SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

180 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.01 Amp

28.58 mm

8 ns

TC55V1403J-20

Toshiba

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

1048576 words

CONFIGURABLE

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

1

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

4194304 bit

e0

.01 Amp

20 ns

TC551664AJ-15EL

Toshiba

CACHE SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

1

R-PDSO-J44

5.5 V

3.7 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

YES

28.58 mm

15 ns

TC551664AJ-15

Toshiba

CACHE SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

260 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ44,.44

16

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

1

R-PDSO-J44

5.5 V

3.7 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

YES

.001 Amp

28.58 mm

15 ns

TC55329AJ-35

Toshiba

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

32768 words

COMMON

5

5

9

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

32KX9

32K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J32

5.5 V

3.7 mm

7.7 mm

Not Qualified

294912 bit

4.5 V

e0

.001 Amp

20.96 mm

35 ns

TC551402J-22

Toshiba

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

180 mA

4194304 words

CONFIGURABLE

5

5

1

SMALL OUTLINE

SOJ32,.44

4

SRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

4.75 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-J32

5.25 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

4.75 V

e0

YES

.01 Amp

20.96 mm

22 ns

TC55V8512J-12

Toshiba

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J36

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.004 Amp

23.5 mm

12 ns

TC55V8512J-20

Toshiba

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.004 Amp

23.5 mm

20 ns

TC55V1664BJ-15

Toshiba

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

e0

.002 Amp

15 ns

TC55B4257J-15

Toshiba

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

256KX4

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

5.5 V

3.6 mm

10.2 mm

Not Qualified

1048576 bit

4.5 V

e0

21 mm

15 ns

TC55V328J-25

Toshiba

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

3.6 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

3 V

e0

18.42 mm

25 ns

TC55V8128BJ-15

Toshiba

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

1048576 bit

e0

.002 Amp

15 ns

TC55B464J-10

Toshiba

CACHE SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-J24

5.5 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

4.5 V

e0

15.88 mm

10 ns

TC559128AJ-15

Toshiba

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

9

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

128KX9

128K

0 Cel

DUAL

1

R-PDSO-J36

5.5 V

3.7 mm

10.16 mm

Not Qualified

1179648 bit

4.5 V

YES

23.5 mm

15 ns

TC55464J-20

Toshiba

CACHE SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

4.5 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J24

5.5 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

4.5 V

e0

NO

.001 Amp

15.88 mm

20 ns

TC55BS4258J-12

Toshiba

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

SYNCHRONOUS

262144 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

256KX8

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

5.5 V

3.7 mm

10.16 mm

Not Qualified

2097152 bit

4.5 V

e0

23.5 mm

6 ns

TC55328AJ-20

Toshiba

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

5.5 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

4.5 V

e0

18.42 mm

20 ns

TC55V1664J-10

Toshiba

CACHE SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

260 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J44

3.6 V

3.7 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e0

.001 Amp

28.58 mm

10 ns

TC55329AJ-20

Toshiba

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

32768 words

COMMON

5

5

9

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

32KX9

32K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

294912 bit

e0

.001 Amp

20 ns

TC55465AJ-35

Toshiba

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

5.5 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

4.5 V

e0

.001 Amp

18.42 mm

35 ns

TC55V328AJ-20

Toshiba

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

3.6 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

3 V

e0

YES

18.42 mm

20 ns

TC558128AJ-15

Toshiba

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

1

R-PDSO-J32

5.5 V

3.7 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

YES

.001 Amp

20.96 mm

15 ns

TC55B464J-15

Toshiba

CACHE SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J24

5.5 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

4.5 V

e0

NO

15.88 mm

15 ns

TC554101J-25

Toshiba

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

1048576 words

SEPARATE

5

5

4

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J36

5.5 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e0

.01 Amp

23.5 mm

25 ns

TC55V8512JI-15(EL)

Toshiba

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

Not Qualified

4194304 bit

e0

.01 Amp

15 ns

TC55VZM216AJGI10

Toshiba

CACHE SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE

1.27 mm

85 Cel

256KX16

256K

-40 Cel

DUAL

R-PDSO-J44

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

28.58 mm

10 ns

TC55464AJ-15

Toshiba

CACHE SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-J24

5.5 V

3.7 mm

7.7 mm

Not Qualified

262144 bit

4.5 V

e0

15.88 mm

15 ns

71016S20YG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J44

3

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

.01 Amp

28.575 mm

20 ns

71016NS20YG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

MATTE TIN

DUAL

R-PDSO-J44

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

.01 Amp

28.575 mm

20 ns

71016S20YGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J44

3

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

.01 Amp

28.575 mm

20 ns

71016S15YG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

180 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J44

3

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

.01 Amp

28.575 mm

15 ns

71016S20YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J44

3

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

.01 Amp

28.575 mm

20 ns

71016S25Y

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J44

3

Not Qualified

1048576 bit

e0

30

225

.01 Amp

25 ns

71016NS12Y

Renesas Electronics

APPLICATION SPECIFIC SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

210 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J44

5.5 V

Not Qualified

1048576 bit

4.5 V

e0

.01 Amp

12 ns

71016S12YG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

210 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J44

3

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

.01 Amp

28.575 mm

12 ns

71016S20YG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J44

3

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

.01 Amp

28.575 mm

20 ns

71016NS15YI

Renesas Electronics

APPLICATION SPECIFIC SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

180 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

4.5 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J44

5.5 V

Not Qualified

1048576 bit

4.5 V

e0

.01 Amp

15 ns

HM6789HAJP-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

16384 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

16KX4

16K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

15.63 mm

15 ns

HM679SHJP-12

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

DUAL

R-PDSO-J28

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

18.17 mm

12 ns

HM67A9512JP-10

Renesas Electronics

APPLICATION SPECIFIC SRAM

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

SYNCHRONOUS

524288 words

5

9

SMALL OUTLINE

1.27 mm

512KX9

512K

DUAL

R-PDSO-J36

4.39 mm

10.16 mm

Not Qualified

4718592 bit

23.25 mm

10 ns

HM67A9512JP-12

Renesas Electronics

APPLICATION SPECIFIC SRAM

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

SYNCHRONOUS

524288 words

5

9

SMALL OUTLINE

1.27 mm

512KX9

512K

DUAL

R-PDSO-J36

4.39 mm

10.16 mm

Not Qualified

4718592 bit

23.25 mm

12 ns

HM6707JP-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

256KX1

256K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

15.63 mm

20 ns

R1RW0404DGE-2LR

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

1048576 words

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

2 V

0 Cel

DUAL

R-PDSO-J32

2

3.6 V

3.55 mm

10.16 mm

Not Qualified

4194304 bit

3 V

.0004 Amp

20.95 mm

12 ns

HM678127UHJP-10

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

20.71 mm

10 ns

HM6708AJP-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

15.63 mm

20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.