SOJ SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C109B-15VC	Infineon Technologies	STANDARD SRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		COMMON	5		8	SMALL OUTLINE	SOJ32,.44			1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-J32		5.5 V	3.7592 mm		10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	15 ns
CY7C109BL-15VC	Infineon Technologies	STANDARD SRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		COMMON	5		8	SMALL OUTLINE	SOJ32,.44			1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-J32		5.5 V	3.7592 mm		10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	15 ns
CY7C109B-15VI	Infineon Technologies	STANDARD SRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		COMMON	5		8	SMALL OUTLINE	SOJ32,.44			1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.7592 mm		10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	15 ns
CY7C1009B-15VXC	Infineon Technologies	STANDARD SRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		COMMON	5		8	SMALL OUTLINE	SOJ32,.34			1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-J32		5.5 V	3.556 mm		7.5819 mm		1048576 bit	4.5 V					YES	.01 Amp	20.828 mm	15 ns
CY7C1009B-20VC	Infineon Technologies	STANDARD SRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	75 mA	131072 words		COMMON	5		8	SMALL OUTLINE	SOJ32,.34			1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-J32		5.5 V	3.556 mm		7.5819 mm		1048576 bit	4.5 V					YES	.01 Amp	20.828 mm	20 ns
CY7C109B-12VC	Infineon Technologies	STANDARD SRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	131072 words		COMMON	5		8	SMALL OUTLINE	SOJ32,.44			1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-J32		5.5 V	3.7592 mm		10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	12 ns
CY7C1009B-15VC	Infineon Technologies	STANDARD SRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		COMMON	5		8	SMALL OUTLINE	SOJ32,.34			1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDSO-J32		5.5 V	3.556 mm		7.5819 mm		1048576 bit	4.5 V					YES	.01 Amp	20.828 mm	15 ns
CY7C109B-20VI	Infineon Technologies	STANDARD SRAM		32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	75 mA	131072 words		COMMON	5		8	SMALL OUTLINE	SOJ32,.44			1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.7592 mm		10.16 mm		1048576 bit	4.5 V					YES	.01 Amp	20.955 mm	20 ns
CY7C1041GE30-10VXIT	Infineon Technologies	STANDARD SRAM		44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words		COMMON	3		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL		R-PDSO-J44	3	3.6 V	3.7592 mm	100 MHz	10.16 mm		4194304 bit	2.2 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C1041GE-10VXI	Infineon Technologies	STANDARD SRAM		44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words		COMMON	5		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm	100 MHz	10.16 mm		4194304 bit	4.5 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C1021DV33-10VXI	Infineon Technologies	STANDARD SRAM		44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	65536 words		COMMON	3.3		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	3.6 V	3.7592 mm	100 MHz	10.16 mm		1048576 bit	3 V		e4	40	260	YES	.003 Amp	28.575 mm	10 ns
CY7C1041GE30-10VXI	Infineon Technologies	STANDARD SRAM		44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words		COMMON	3		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL		R-PDSO-J44	3	3.6 V	3.7592 mm	100 MHz	10.16 mm		4194304 bit	2.2 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C1041G18-15VXI	Infineon Technologies	STANDARD SRAM		44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	262144 words		COMMON	1.8		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL		R-PDSO-J44	3	2.2 V	3.7592 mm	66.7 MHz	10.16 mm		4194304 bit	1.65 V				260	YES	.008 Amp	28.575 mm	15 ns
CY7C1041G30-10VXI	Infineon Technologies	STANDARD SRAM		44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words		COMMON	3		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL		R-PDSO-J44	3	3.6 V	3.7592 mm	100 MHz	10.16 mm		4194304 bit	2.2 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C1041G18-15VXIT	Infineon Technologies	STANDARD SRAM		44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	262144 words		COMMON	1.8		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL		R-PDSO-J44	3	2.2 V	3.7592 mm	66.7 MHz	10.16 mm		4194304 bit	1.65 V				260	YES	.008 Amp	28.575 mm	15 ns
CY7C1041GE-10VXIT	Infineon Technologies	STANDARD SRAM		44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	262144 words		COMMON	5		16	SMALL OUTLINE	SOJ44,.44			1.27 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	PURE TIN	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm	100 MHz	10.16 mm		4194304 bit	4.5 V				260	YES	.008 Amp	28.575 mm	10 ns
CY7C1019DV33-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	131072 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J32	3	3.6 V	3.75 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e4	40	260		.003 Amp	20.955 mm	10 ns
CY7C1010DV33-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	262144 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J36	3	3.6 V	2.75 mm		10.16 mm	Not Qualified	2097152 bit	3 V		e4	40	260		.01 Amp	23.495 mm	10 ns
PI2C2589-15J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	260 mA	32768 words		COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	294912 bit			e0				.15 Amp		14 ns
PI2C2589-25J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	220 mA	32768 words		COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	294912 bit			e0				.13 Amp		24 ns
PI2C2589-20J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	240 mA	32768 words		COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	294912 bit			e0				.13 Amp		19 ns
PI2C2589-35J	Diodes Incorporated	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	200 mA	32768 words		COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	294912 bit			e0				.13 Amp		34 ns
DS3065WP-100IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	SYNCHRONOUS	50 mA	1024 words			3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0		SRAMs	1.27 mm	85 Cel		1KX8	1K		-40 Cel		DUAL		R-XDMA-U34		3.6 V	2.3368 mm		23.495 mm	Not Qualified	8192 bit	3 V			30	260		.0015 Amp	25.019 mm	100 ns
TC551664BJI-12	Toshiba	CACHE SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	300 mA	65536 words		COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.75 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		5.25 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.75 V		e0				.001 Amp	28.58 mm	12 ns
TC55VZM216AJGI08	Toshiba	CACHE SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words			3.3		16	SMALL OUTLINE				1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V							28.58 mm	8 ns
TC55417J-35	Toshiba	STANDARD SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	16384 words		COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	65536 bit			e0				.001 Amp		35 ns
TC55V1664BJ-8	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	260 mA	65536 words		COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		3.465 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	3.135 V		e0				.002 Amp	28.58 mm	8 ns
TC55B329J-12	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	170 mA	32768 words		COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	294912 bit			e0						12 ns
TC55328J-17	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.25 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.75 V		e0			YES	.001 Amp	18.42 mm	17 ns
TC5589J-35	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words			5		9	SMALL OUTLINE				1.27 mm	70 Cel		8KX9	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28		5.5 V	3.7 mm		7.7 mm	Not Qualified	73728 bit	4.5 V		e0					18.42 mm	35 ns
TC55B328J-12	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	170 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28						Not Qualified	262144 bit			e0						12 ns
TC5588J-25	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	115 mA	8192 words		COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.7 mm		7.7 mm	Not Qualified	65536 bit	4.5 V		e0				.001 Amp	18.42 mm	25 ns
TC55B464J-12	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words		COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDSO-J24		5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0					15.88 mm	12 ns
TC55329AJ-25	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words		COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32						Not Qualified	294912 bit			e0				.001 Amp		25 ns
TC551664AJ-20EL	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words			5		16	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	64KX16	64K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J44		5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		28.58 mm	20 ns
TC55V8128BJ-12	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel		DUAL		R-PDSO-J32		3.6 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	3 V						.002 Amp	20.96 mm	12 ns
TC55V1403J-15	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words		CONFIGURABLE	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32		3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V	CAN ALSO BE CONFIGURED AS 1M X 4	e0				.01 Amp	20.96 mm	15 ns
TC55V8128BJ-10	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	131072 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32		3.6 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0				.002 Amp	20.96 mm	10 ns
TC558128BJI-12	Toshiba	CACHE SRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.75 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32		5.25 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.75 V		e0				.001 Amp	20.96 mm	12 ns
TC55V328BJ-12	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	32768 words		COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	3.1 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		3.6 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	3.1 V		e0			YES	.0003 Amp	18.42 mm	12 ns
TC55VZM216AJJI10	Toshiba	CACHE SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	262144 words		COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44		3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	28.58 mm	10 ns
TC514258J-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			75 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20						Not Qualified	1048576 bit			e0				.001 Amp		85 ns
TC55329J-25	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words		COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.7 mm		7.7 mm	Not Qualified	294912 bit	4.5 V		e0			YES	.001 Amp	20.96 mm	25 ns
TC55464J-17	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.25 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.75 V		e0			NO	.001 Amp	15.88 mm	17 ns
TC55464J-25	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words		COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.001 Amp	15.88 mm	25 ns
TC5116402J-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			90 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44		SRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0				.001 Amp		60 ns
TC55B465J-10	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words		COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0					18.42 mm	10 ns
TC55328J-25	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words		COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.001 Amp	18.42 mm	25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.