SOJ SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

R1RW0416DGE-2PI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

TIN BISMUTH

DUAL

R-PDSO-J44

3.6 V

3.55 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e6

.005 Amp

28.57 mm

12 ns

HM6708JP-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

15.63 mm

20 ns

R1RW0416DGE-2PR#B0

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE

1.27 mm

70 Cel

256KX16

256K

0 Cel

DUAL

R-PDSO-J44

2

3.6 V

3.55 mm

10.16 mm

4194304 bit

3 V

28.57 mm

12 ns

HM6787HJP-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

64KX1

64K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

15.63 mm

20 ns

R1RW0408DGE-2LR

Renesas Electronics

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

DUAL

R-PDSO-J36

2

3.6 V

3.55 mm

10.16 mm

Not Qualified

4194304 bit

3 V

20

245

.0004 Amp

23.49 mm

12 ns

HM6707AJP-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

256KX1

256K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

15.63 mm

20 ns

HM671400HJP-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

SERIAL

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

4MX1

4M

0 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

20.71 mm

15 ns

HM6789HAJP-12

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

16384 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

16KX4

16K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

15.63 mm

12 ns

HM6708JP-25

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

BICMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

15.63 mm

25 ns

HM624256LJP-45

Renesas Electronics

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

256KX4

256K

0 Cel

DUAL

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

18.17 mm

45 ns

IDT7164L35Y8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

8KX8

8K

2 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J28

5.5 V

3.556 mm

7.5184 mm

Not Qualified

65536 bit

4.5 V

e0

YES

17.9324 mm

35 ns

UPD434008ALE-17

Renesas Electronics

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

Not Qualified

4194304 bit

e0

.01 Amp

17 ns

HM628127HJP-17

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

20.71 mm

17 ns

HM6216255HCLJP-12

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

256KX16

256K

0 Cel

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

4194304 bit

4.5 V

28.615 mm

12 ns

IDT71V256SA12YG

Renesas Electronics

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

MATTE TIN

DUAL

1

R-PDSO-J28

3.6 V

3.556 mm

7.5184 mm

Not Qualified

262144 bit

3 V

e3

YES

17.9324 mm

12 ns

71V256SA15YG

Renesas Electronics

CACHE SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

Matte Tin (Sn)

DUAL

R-PDSO-J28

3

3.6 V

Not Qualified

262144 bit

3 V

e3

NOT SPECIFIED

260

.002 Amp

15 ns

71V416S10YG

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J44

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

40

260

.02 Amp

28.575 mm

10 ns

HM627HLJP-35

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

256KX1

256K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

15.63 mm

35 ns

HM62W4100HLJP-12

Renesas Electronics

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

4

SMALL OUTLINE

1.27 mm

70 Cel

1MX4

1M

0 Cel

DUAL

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

TTL COMPATIBLE INPUTS/OUTPUTS

20.71 mm

12 ns

HM6207HLJP-25

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

262144 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

256KX1

256K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP

e0

.0001 Amp

15.63 mm

25 ns

UPD434016ALE-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

262144 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

4194304 bit

e0

.01 Amp

20 ns

71V124SA12YG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J32

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e3

30

260

.01 Amp

20.955 mm

12 ns

IDT71V124SA10TYG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

145 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3.15 V

0 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

3.6 V

3.7592 mm

7.62 mm

Not Qualified

1048576 bit

3.15 V

e3

40

260

.01 Amp

20.955 mm

10 ns

HM62W1864HLJP-25

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

3.3

18

SMALL OUTLINE

1.27 mm

70 Cel

64KX18

64K

0 Cel

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1179648 bit

3 V

28.33 mm

25 ns

UPD434001ALLE-A17

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

4194304 words

SEPARATE

3.3

3.3

1

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

4194304 bit

e0

.005 Amp

17 ns

IDT71V424S12YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J36

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

30

260

.02 Amp

23.495 mm

12 ns

UPD43251LA-45

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

262144 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

256KX1

256K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

262144 bit

e0

.002 Amp

45 ns

UPD431016LE-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

240 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

4.5 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J44

5.5 V

3.7 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

.01 Amp

28.73 mm

15 ns

HM62W1864HLJP-30

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

3.3

18

SMALL OUTLINE

1.27 mm

70 Cel

64KX18

64K

0 Cel

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1179648 bit

3 V

28.33 mm

30 ns

HM624100JP-35

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

1MX4

1M

0 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

20.71 mm

35 ns

HM62W4100HLJP-10

Renesas Electronics

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

4

SMALL OUTLINE

1.27 mm

70 Cel

1MX4

1M

0 Cel

DUAL

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

TTL COMPATIBLE INPUTS/OUTPUTS

20.71 mm

10 ns

UPD43251BLA-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

262144 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

256KX1

256K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

262144 bit

e0

.002 Amp

15 ns

71V016SA15YIG

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J44

3

3.6 V

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

15 ns

UPD444008LLE-A10-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

165 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

DUAL

R-PDSO-J36

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

NOT SPECIFIED

NOT SPECIFIED

.005 Amp

23.6 mm

10 ns

IDT71024S12TYGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

5.5 V

3.76 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

.01 Amp

20.96 mm

12 ns

IDT71V424S12YG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J36

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

30

260

.02 Amp

23.495 mm

12 ns

7164L20YGB

Renesas Electronics

STANDARD SRAM

MILITARY

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

MIL-STD-883 Class B

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

8192 words

5

8

SMALL OUTLINE

1.27 mm

125 Cel

8KX8

8K

-55 Cel

Matte Tin (Sn)

DUAL

R-PDSO-J28

5.5 V

3.556 mm

7.5184 mm

Not Qualified

65536 bit

4.5 V

e3

30

260

17.9324 mm

19 ns

7164L85YGB8

Renesas Electronics

STANDARD SRAM

MILITARY

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

MIL-STD-883 Class B

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

8192 words

5

8

SMALL OUTLINE

1.27 mm

125 Cel

8KX8

8K

-55 Cel

Matte Tin (Sn)

DUAL

R-PDSO-J28

5.5 V

3.556 mm

7.5184 mm

Not Qualified

65536 bit

4.5 V

e3

30

260

17.9324 mm

85 ns

IDT71V016SA20YG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

MATTE TIN

DUAL

1

R-PDSO-J44

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

3.15 V

ALSO OPERATES WITH 3V TO 3.6 V SUPPLY

e3

40

260

YES

.01 Amp

28.575 mm

20 ns

HM621400HLJP-10

Renesas Electronics

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

4MX1

4M

0 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

20.71 mm

10 ns

71256L20YG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

135 mA

32768 words

COMMON

5

8

SMALL OUTLINE

SOJ28,.34

1.27 mm

70 Cel

32KX8

32K

4.5 V

0 Cel

MATTE TIN

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

262144 bit

4.5 V

e3

260

YES

.0006 Amp

17.9324 mm

20 ns

UPD4368LA-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

SRAMs

1.27 mm

70 Cel

3-STATE

8KX8

8K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

65536 bit

e0

.002 Amp

15 ns

UPD43251BLA-25

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

262144 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

256KX1

256K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

262144 bit

e0

.002 Amp

25 ns

HM62W8201HLJP-10

Renesas Electronics

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

2MX8

2M

0 Cel

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

23.25 mm

10 ns

IDT71V016SA15YG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

3 V

0 Cel

MATTE TIN

DUAL

1

R-PDSO-J44

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e3

40

260

YES

.01 Amp

28.575 mm

15 ns

HM62W8511HJP-12

Renesas Electronics

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

TTL COMPATIBLE INPUTS/OUTPUTS

.01 Amp

23.25 mm

12 ns

IDT7112415Y

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDSO-J32

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

20.955 mm

15 ns

HM6216255HCJP-12

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

256KX16

256K

0 Cel

DUAL

R-PDSO-J44

5.5 V

3.76 mm

10.16 mm

4194304 bit

4.5 V

28.615 mm

12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.