SOJ SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7164S55YGB	Renesas Electronics	STANDARD SRAM	MILITARY	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	315 mA	8192 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	30	260			17.9324 mm	55 ns
71V124SA12YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e3	30	260		.01 Amp	20.955 mm	12 ns
IDT71016S20YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J44	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260		.01 Amp	28.575 mm	20 ns
UPD43253BLA-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	262144 bit			e0				.002 Amp		15 ns
7164L20YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.00006 Amp	17.9324 mm	19 ns
IDT71B229S16Y8	Renesas Electronics	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		9	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.25 V	3.76 mm	7.62 mm	Not Qualified	294912 bit	4.75 V	16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA	e0			YES		20.96 mm	16 ns
UPD444004LE-10-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	0 Cel		DUAL		R-PDSO-J32		5.5 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.01 Amp	21.26 mm	10 ns
71V424S15YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.5 mm	15 ns
71024S20YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.04 Amp	20.995 mm	20 ns
7164S45YGB8	Renesas Electronics	STANDARD SRAM	MILITARY	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	30	260			17.9324 mm	45 ns
IDT71V416S15YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J44	3	3.6 V			Not Qualified	4194304 bit	3 V		e3	40	260		.02 Amp		15 ns
IDT71V424S15YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J36	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260	YES	.02 Amp	23.495 mm	15 ns
HM62W8127HLJP-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	3 V							20.71 mm	25 ns
HM628127HLJP-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0					20.71 mm	25 ns
71256L25PK	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.4	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28					Not Qualified	262144 bit			e0				.00012 Amp		25 ns
HM624100HLJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		1MX4	1M		0 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							20.71 mm	10 ns
UPD461008LE-10	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES				J BEND	PARALLEL	ASYNCHRONOUS	185 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0				.05 Amp		10 ns
HM624100JP-40	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		1MX4	1M		0 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							20.71 mm	40 ns
UPD431004LE-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	1048576 bit			e0				.002 Amp		25 ns
7164L25YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.00006 Amp	17.9324 mm	25 ns
UPD434016ALE-17	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	210 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J44					Not Qualified	4194304 bit			e0				.01 Amp		17 ns
71256L35YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34		1.27 mm	85 Cel		32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm		262144 bit	4.5 V		e3	40	260	YES	.0006 Amp	17.9324 mm	35 ns
71V424S15YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J36	3	3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	23.5 mm	15 ns
IDT71024S15YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.01 Amp	20.96 mm	15 ns
IDT71024S12TYGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	5.5 V	3.759 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260		.01 Amp	20.96 mm	12 ns
IDT71V124SA15YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	30	260		.01 Amp	20.955 mm	15 ns
71V416S15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J44	3	3.6 V			Not Qualified	4194304 bit	3 V		e3		260		.02 Amp		15 ns
HM62W4100HJP-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	3 V	0 Cel		DUAL		R-PDSO-J32		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS					.005 Amp	20.71 mm	12 ns
71256L35PK	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.4	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28					Not Qualified	262144 bit			e0				.00012 Amp		35 ns
71024S12YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.04 Amp	20.995 mm	12 ns
IDT7164L25YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.00006 Amp	17.9324 mm	25 ns
IDT71V124SA10YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3.15 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	30	260		.01 Amp	20.955 mm	10 ns
HM6216255HJPI-15	Renesas Electronics	CACHE SRAM	INDUSTRIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							28.33 mm	15 ns
IDT7112415YI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-J32		5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0					20.955 mm	15 ns
IDT7164S25YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3				Not Qualified	65536 bit			e3	40	260		.015 Amp		25 ns
UPD434004LE-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	4194304 bit			e0				.05 Amp		25 ns
UPD444016LLE-A12-A	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel		DUAL		R-PDSO-J44		3.6 V	3.7 mm	10.16 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.005 Amp	28.73 mm	12 ns
HM62W1864HLJP-35	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		18	SMALL OUTLINE			1.27 mm	70 Cel		64KX18	64K		0 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	1179648 bit	3 V							28.33 mm	35 ns
HM62W8511HJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS						23.25 mm	10 ns
HM62W16255HJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel	TIN LEAD	DUAL		R-PDSO-J44		3.6 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0					28.33 mm	10 ns
UPD434008ALLE-A17	Renesas Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36					Not Qualified	4194304 bit							.005 Amp		17 ns
UPD424268LA-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND			70 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J20					Not Qualified	1048576 bit			e0				.001 Amp		80 ns
IDT71B229S12Y8	Renesas Electronics	CACHE SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		9	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.25 V	3.76 mm	7.62 mm	Not Qualified	294912 bit	4.75 V	16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA	e0			YES		20.96 mm	12 ns
71V124SA12YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e3	30	260		.01 Amp	20.955 mm	12 ns
71024S20TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	20 ns
IDT71V416L10YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J44	3	3.6 V			Not Qualified	4194304 bit	3 V		e3	40	260		.01 Amp		10 ns
UPD43253BLA-25	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	262144 bit			e0				.002 Amp		25 ns
7164L70YGB	Renesas Electronics	STANDARD SRAM	MILITARY	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	8192 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		8KX8	8K		-55 Cel	Matte Tin (Sn)	DUAL		R-PDSO-J28		5.5 V	3.556 mm	7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	30	260			17.9324 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.