Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.01 Amp |
20.96 mm |
12 ns |
||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
32KX9 |
32K |
0 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
294912 bit |
4.5 V |
20.71 mm |
15 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
130 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
40 |
260 |
.01 Amp |
20.955 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-STD-883 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
295 mA |
8192 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
17.9324 mm |
35 ns |
|||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ36,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J36 |
3 |
3.6 V |
3.683 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
.01 Amp |
23.495 mm |
12 ns |
||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20.71 mm |
35 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX9 |
128K |
0 Cel |
DUAL |
R-PDSO-J36 |
5.5 V |
4.39 mm |
10.16 mm |
Not Qualified |
1179648 bit |
4.5 V |
23.25 mm |
17 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-J44 |
3 |
3.6 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
YES |
.01 Amp |
28.575 mm |
12 ns |
||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-J32 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
20.71 mm |
25 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
262144 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J24 |
Not Qualified |
262144 bit |
e0 |
.002 Amp |
55 ns |
||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
8KX8 |
8K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
40 |
260 |
.00006 Amp |
17.9324 mm |
25 ns |
||||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
1 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
64KX1 |
64K |
0 Cel |
DUAL |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
15.63 mm |
35 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
262144 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
2 V |
0 Cel |
DUAL |
R-PDSO-J24 |
Not Qualified |
262144 bit |
.0001 Amp |
35 ns |
||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
20.71 mm |
17 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.4 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
Not Qualified |
262144 bit |
e0 |
.015 Amp |
35 ns |
||||||||||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
85 mA |
32768 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J28 |
3 |
3.6 V |
3.556 mm |
7.5184 mm |
Not Qualified |
262144 bit |
3 V |
e3 |
40 |
260 |
.002 Amp |
17.9324 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ36,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J36 |
3 |
3.6 V |
3.683 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
.02 Amp |
23.495 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3.3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J36 |
3.6 V |
3.683 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
23.495 mm |
10 ns |
|||||||||||||||||||||||
Renesas Electronics |
STATIC COLUMN DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
60 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J20 |
Not Qualified |
1048576 bit |
e0 |
.001 Amp |
100 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.759 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.01 Amp |
20.96 mm |
12 ns |
||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
18 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
64KX18 |
64K |
0 Cel |
DUAL |
R-PDSO-J44 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
1179648 bit |
4.5 V |
28.33 mm |
17 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-STD-883 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
315 mA |
8192 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
17.9324 mm |
55 ns |
|||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ36,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J36 |
Not Qualified |
4194304 bit |
e0 |
.005 Amp |
12 ns |
||||||||||||||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ28,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
4.5 V |
0 Cel |
DUAL |
R-PDSO-J28 |
5.5 V |
Not Qualified |
1048576 bit |
4.5 V |
.002 Amp |
25 ns |
|||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-J44 |
3 |
3.6 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
40 |
260 |
YES |
.01 Amp |
28.575 mm |
20 ns |
||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
16KX4 |
16K |
0 Cel |
DUAL |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
15.63 mm |
35 ns |
||||||||||||||||||||||||||
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDSO-J36 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
23.25 mm |
15 ns |
||||||||||||||||||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
4194304 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
4MX1 |
4M |
4.5 V |
0 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
.005 Amp |
20.71 mm |
15 ns |
||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J32 |
3 |
5.5 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
.01 Amp |
20.955 mm |
20 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J32 |
3 |
5.5 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
.01 Amp |
20.955 mm |
20 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
17.9324 mm |
25 ns |
||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
MILITARY |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-STD-883 Class B |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
8192 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
17.9324 mm |
19 ns |
|||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
20.96 mm |
20 ns |
||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
PARALLEL |
ASYNCHRONOUS |
32768 words |
COMMON |
5 |
5 |
9 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX9 |
32K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J32 |
Not Qualified |
294912 bit |
e0 |
7 ns |
|||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
200 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-J44 |
3 |
Not Qualified |
4194304 bit |
e0 |
30 |
225 |
.02 Amp |
10 ns |
|||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
170 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J44 |
3 |
3.6 V |
Not Qualified |
4194304 bit |
3 V |
e3 |
260 |
.01 Amp |
12 ns |
||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J32 |
3 |
5.5 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
.01 Amp |
20.955 mm |
15 ns |
||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX9 |
128K |
0 Cel |
DUAL |
R-PDSO-J36 |
5.5 V |
4.39 mm |
10.16 mm |
Not Qualified |
1179648 bit |
4.5 V |
23.25 mm |
15 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-J36 |
3 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
.02 Amp |
23.5 mm |
10 ns |
||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
1MX4 |
1M |
0 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.76 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
20.71 mm |
25 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
16KX4 |
16K |
0 Cel |
DUAL |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
15.63 mm |
45 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-J32 |
3 |
3.6 V |
3.7592 mm |
7.62 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
40 |
260 |
.01 Amp |
20.955 mm |
15 ns |
||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
262144 words |
5 |
1 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
256KX1 |
256K |
0 Cel |
DUAL |
R-PDSO-J24 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
15.63 mm |
45 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
150 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
3 V |
0 Cel |
DUAL |
R-PDSO-J32 |
3.6 V |
3.7 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
.005 Amp |
21.26 mm |
12 ns |
|||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
180 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
3 V |
0 Cel |
DUAL |
R-PDSO-J32 |
1 |
3.6 V |
3.7 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
.005 Amp |
21.26 mm |
8 ns |
|||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
PARALLEL |
ASYNCHRONOUS |
260 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
e0 |
.07 Amp |
12 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
J BEND |
PARALLEL |
ASYNCHRONOUS |
260 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J44 |
Not Qualified |
1048576 bit |
e0 |
.07 Amp |
11 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
17.9324 mm |
25 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.