SOJ SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

HM624100HJP-12

Renesas Electronics

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

180 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

4.5 V

0 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

.005 Amp

20.71 mm

12 ns

UPD44008LLE-A12

Renesas Electronics

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J36

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.005 Amp

23.6 mm

12 ns

UPD46258LLA-10

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

3 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

262144 bit

e0

10 ns

UPD431004LE-35

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

1048576 bit

e0

.002 Amp

35 ns

UPD444016LLE-A8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

210 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J44

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.005 Amp

28.73 mm

8 ns

HM621400HJP-10

Renesas Electronics

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

4194304 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

4MX1

4M

4.5 V

0 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

.005 Amp

20.71 mm

10 ns

UPD4362BLA-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

110 mA

16384 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

65536 bit

e0

.000002 Amp

20 ns

IDT7164S20YGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

110 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

8KX8

8K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

Not Qualified

65536 bit

4.5 V

e3

40

260

.015 Amp

17.9324 mm

19 ns

71124S20YG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J32

3

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

30

260

.01 Amp

20.955 mm

20 ns

UPD4361BLA-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

110 mA

65536 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX1

64K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

65536 bit

e0

.002 Amp

20 ns

UPD43254BLA-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOJ24,.34

SRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J24

Not Qualified

262144 bit

e0

.002 Amp

15 ns

IDT71016NS20YG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

64KX16

64K

0 Cel

MATTE TIN

DUAL

R-PDSO-J44

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

28.575 mm

20 ns

HM624257LJP-45

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

256KX4

256K

0 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

20.71 mm

45 ns

71256L35YG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

115 mA

32768 words

COMMON

5

8

SMALL OUTLINE

SOJ28,.34

1.27 mm

70 Cel

32KX8

32K

4.5 V

0 Cel

MATTE TIN

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

262144 bit

4.5 V

e3

40

260

YES

.0006 Amp

17.9324 mm

35 ns

HM628511HLJP-12

Renesas Electronics

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J36

5.5 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

TTL COMPATIBLE INPUTS/OUTPUTS

e0

.0003 Amp

23.25 mm

12 ns

UPD434004ALE-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

1048576 words

COMMON

5

5

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

Not Qualified

4194304 bit

e0

.01 Amp

20 ns

UPD431018LE-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

65536 words

COMMON

5

5

18

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX18

64K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

1179648 bit

e0

.01 Amp

20 ns

UPD431018LE-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

260 mA

65536 words

COMMON

5

5

18

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

64KX18

64K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

1179648 bit

e0

.01 Amp

15 ns

HM62W16255HJPI-15

Renesas Electronics

CACHE SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE

1.27 mm

85 Cel

256KX16

256K

-40 Cel

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

28.33 mm

15 ns

HM627HJP-25

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

262144 words

5

1

SMALL OUTLINE

1.27 mm

70 Cel

256KX1

256K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

15.63 mm

25 ns

UPD431009LE-20

Renesas Electronics

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

5

5

9

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX9

128K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J36

Not Qualified

1179648 bit

e0

.01 Amp

20 ns

HM62W4100HJP-15

Renesas Electronics

CACHE SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

1048576 words

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

3 V

0 Cel

DUAL

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

3 V

TTL COMPATIBLE INPUTS/OUTPUTS

.005 Amp

20.71 mm

15 ns

IDT7164S20YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

8KX8

8K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

Not Qualified

65536 bit

4.5 V

e3

40

260

.015 Amp

17.9324 mm

19 ns

IDT71V424L12YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J36

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

30

260

.01 Amp

23.495 mm

12 ns

HM62W1864HJP-25

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

3.3

18

SMALL OUTLINE

1.27 mm

70 Cel

64KX18

64K

0 Cel

DUAL

R-PDSO-J44

3.6 V

3.76 mm

10.16 mm

Not Qualified

1179648 bit

3 V

28.33 mm

25 ns

HM628127HLJP-15

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

DUAL

R-PDSO-J32

5.5 V

3.76 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

20.71 mm

15 ns

HM629127HJP-17

Renesas Electronics

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

9

SMALL OUTLINE

1.27 mm

70 Cel

128KX9

128K

0 Cel

DUAL

R-PDSO-J36

5.5 V

4.39 mm

10.16 mm

Not Qualified

1179648 bit

4.5 V

23.25 mm

17 ns

HM62W8201HLJP-15

Renesas Electronics

CACHE SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

2MX8

2M

0 Cel

DUAL

R-PDSO-J36

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

23.25 mm

15 ns

IDT71V424L10YG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

512KX8

512K

0 Cel

MATTE TIN

DUAL

R-PDSO-J36

3.6 V

3.683 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

23.495 mm

10 ns

HM628HJP-35

Renesas Electronics

STANDARD SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

15.63 mm

35 ns

UPD444016LLE-A8-A

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

210 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

DUAL

R-PDSO-J44

3.6 V

3.7 mm

10.16 mm

Not Qualified

4194304 bit

3 V

NOT SPECIFIED

NOT SPECIFIED

.005 Amp

28.73 mm

8 ns

71V124SA15YG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-J32

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

3.15 V

e3

30

260

.01 Amp

20.955 mm

15 ns

HM6289JP-35

Renesas Electronics

CACHE SRAM

COMMERCIAL

24

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16384 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

16KX4

16K

0 Cel

DUAL

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

15.63 mm

35 ns

71V416L10YG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

MATTE TIN

DUAL

R-PDSO-J44

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

40

260

.01 Amp

28.575 mm

10 ns

71V428L15YGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

4

SMALL OUTLINE

85 Cel

1MX4

1M

-40 Cel

TIN

DUAL

R-PDSO-J32

3

3.6 V

4194304 bit

3 V

e3

260

15 ns

71V428S15YGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

4

SMALL OUTLINE

85 Cel

1MX4

1M

-40 Cel

TIN

DUAL

R-PDSO-J32

3

3.6 V

4194304 bit

3 V

e3

260

15 ns

71V428S12YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

4

SMALL OUTLINE

85 Cel

1MX4

1M

-40 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

3.6 V

4194304 bit

3 V

e3

30

260

12 ns

71V428L10YG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

4

SMALL OUTLINE

70 Cel

1MX4

1M

0 Cel

TIN

DUAL

R-PDSO-J32

3

3.6 V

4194304 bit

3 V

e3

260

10 ns

71V428S12YGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

4

SMALL OUTLINE

85 Cel

1MX4

1M

-40 Cel

TIN

DUAL

R-PDSO-J32

3

3.6 V

4194304 bit

3 V

e3

260

12 ns

71V428L12YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

130 mA

1048576 words

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

1MX4

1M

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

3.6 V

Not Qualified

4194304 bit

3 V

e3

30

260

.01 Amp

12 ns

71V428S15YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

4

SMALL OUTLINE

85 Cel

1MX4

1M

-40 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

3.6 V

4194304 bit

3 V

e3

30

260

15 ns

71V428L12YGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

4

SMALL OUTLINE

85 Cel

1MX4

1M

-40 Cel

TIN

DUAL

R-PDSO-J32

3

3.6 V

4194304 bit

3 V

e3

260

12 ns

71V428L15YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

1048576 words

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

1MX4

1M

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J32

3

3.6 V

Not Qualified

4194304 bit

3 V

e3

30

260

.01 Amp

15 ns

UPD434016ALE-12

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

230 mA

262144 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J44

Not Qualified

4194304 bit

e0

.01 Amp

12 ns

IDT61298TTSA15Y

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

5.5 V

3.556 mm

7.5184 mm

Not Qualified

262144 bit

4.5 V

e0

17.9324 mm

15 ns

IDT71V016SA12YGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J44

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

3 V

e3

40

260

.01 Amp

28.575 mm

12 ns

7164L55YGB8

Renesas Electronics

STANDARD SRAM

MILITARY

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

MIL-STD-883 Class B

J BEND

PARALLEL

ASYNCHRONOUS

295 mA

8192 words

5

8

SMALL OUTLINE

1.27 mm

125 Cel

8KX8

8K

-55 Cel

Matte Tin (Sn)

DUAL

R-PDSO-J28

5.5 V

3.556 mm

7.5184 mm

Not Qualified

65536 bit

4.5 V

e3

30

260

17.9324 mm

55 ns

7164LL15Y

Renesas Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

8KX8

8K

2 V

0 Cel

DUAL

R-PDSO-J28

Not Qualified

65536 bit

.00006 Amp

15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.