SOP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M48Z512AV-85CS9	STMicroelectronics	STANDARD SRAM		32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	SMALL OUTLINE						512KX8	512K			DUAL		R-PDSO-G32		3.6 V			Not Qualified	4194304 bit	3 V	REQUIRES A SNAPHAT BATTERY PACKAGE							85 ns
M48Z35V-100MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	BATTERY BACKUP; WRITE PROTECT	e0				.003 Amp	18.1 mm	100 ns
M48Z512AV-70CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	SMALL OUTLINE				70 Cel		512KX8	512K	0 Cel		DUAL		R-PDSO-G32		3.6 V			Not Qualified	4194304 bit	3 V								70 ns
M48Z35V-100MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	BATTERY BACKUP; WRITE PROTECT	e0				.003 Amp	18.1 mm	100 ns
M48Z35AV-70MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3		8	SMALL OUTLINE				70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G28		3.6 V			Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY							70 ns
M48Z35Y-70MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	70 ns
M48Z35V-100MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	BATTERY BACKUP; WRITE PROTECT	e0				.003 Amp	18.1 mm	100 ns
M48Z35AV-100MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	100 ns
M48Z35-70MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.75 V		e0			YES		18.1 mm	70 ns
M48Z128-85CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	5	5	8	SMALL OUTLINE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V			Not Qualified	1048576 bit	4.75 V	REQUIRES A SNAPHAT BATTERY PACKAGE	e0				.004 Amp		85 ns
M48Z58Y-70MH6F	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V			10	260		.003 Amp	18.1 mm	70 ns
M48Z35AY-70MH6E	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V			10	260		.003 Amp	18.1 mm	70 ns
M48Z58-70MH1F	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		8KX8	8K	0 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.75 V						.003 Amp	18.1 mm	70 ns
M48Z35AY-70MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	70 ns
M48Z128Y-85CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	5	5	8	SMALL OUTLINE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V			Not Qualified	1048576 bit	4.5 V	REQUIRES A SNAPHAT BATTERY PACKAGE	e0				.004 Amp		85 ns
M48Z58Y-70MH1F	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		8KX8	8K	0 Cel	TIN	DUAL		R-PDSO-G28	3	5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	18.1 mm	70 ns
M48Z35AY-70MH1E	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY		10	260		.003 Amp	18.1 mm	70 ns
M48Z58Y-70MH1E	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		8KX8	8K	0 Cel	TIN	DUAL		R-PDSO-G28	3	5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	18.1 mm	70 ns
M48Z35AY-70MH6F	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V			10	260		.003 Amp	18.1 mm	70 ns
M48Z35AV-10MH6F	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V		e4				.003 Amp	18.1 mm	100 ns
M48Z35AY-70MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	70 ns
M48Z35AV-100MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	100 ns
M48Z128V-85CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	3.3		8	SMALL OUTLINE				70 Cel		128KX8	128K	0 Cel		DUAL		R-PDSO-G32		3.6 V			Not Qualified	1048576 bit	3 V	REQUIRES A SNAPHAT BATTERY PACKAGE							85 ns
M48Z58Y-70MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0				.003 Amp	18.1 mm	70 ns
M48Z35AV-70MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3		8	SMALL OUTLINE				85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G28		3.6 V			Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY							70 ns
M48Z35AV-10MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	100 ns
M48Z35Y-70MH6E	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e4				.003 Amp	18.1 mm	70 ns
M48Z18-100MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	8192 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0			YES	.003 Amp	18.1 mm	100 ns
M48Z59Y-70MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		DUAL	1	R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION				YES		18.1 mm	70 ns
M48Z58Y-70MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		8KX8	8K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0				.003 Amp	18.1 mm	70 ns
M48Z35AV-10MH6E	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V		e4				.003 Amp	18.1 mm	100 ns
M48Z128-120CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	105 mA	131072 words	5	5	8	SMALL OUTLINE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V			Not Qualified	1048576 bit	4.75 V	REQUIRES A SNAPHAT BATTERY PACKAGE	e0				.004 Amp		120 ns
M48Z58-70MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			50 mA	8192 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	65536 bit			e0				.003 Amp		70 ns
M48Z35AV-100MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	100 ns
M48Z35Y-70MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0			YES	.003 Amp	18.1 mm	70 ns
M48Z59W-70MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			50 mA	8192 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	65536 bit			e0				.003 Amp		70 ns
M48Z35AY-70MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	70 ns
M48Z35V-100MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	BATTERY BACKUP; WRITE PROTECT	e0				.003 Amp	18.1 mm	100 ns
M48Z512AV-70CS9	STMicroelectronics	STANDARD SRAM		32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	SMALL OUTLINE						512KX8	512K			DUAL		R-PDSO-G32		3.6 V			Not Qualified	4194304 bit	3 V								70 ns
M48Z35AV-10MH1F	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY		10	260		.003 Amp	18.1 mm	100 ns
M48Z35-70MH1F	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.75 V						.003 Amp	18.1 mm	70 ns
M48Z08Y-10MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	8192 words	5	5	8	SMALL OUTLINE	DIP28,.6	SRAMs	1.27 mm	70 Cel		8KX8	8K	0 Cel	MATTE TIN	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	18.1 mm	100 ns
M48Z35Y-70MH6F	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e4				.003 Amp	18.1 mm	70 ns
M48Z128V-120CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	3.3		8	SMALL OUTLINE				70 Cel		128KX8	128K	0 Cel		DUAL		R-PDSO-G32		3.6 V			Not Qualified	1048576 bit	3 V	REQUIRES A SNAPHAT BATTERY PACKAGE							120 ns
M48Z128V-70CS1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	3.3		8	SMALL OUTLINE				70 Cel		128KX8	128K	0 Cel		DUAL		R-PDSO-G32		3.6 V			Not Qualified	1048576 bit	3 V	SNAPHAT BATTERY TOP TO BE ORDERED SEPARATELY TO USE THE DEVICE AS A NON-VOLATILE SRAM							70 ns
M48Z35AV-70MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3		8	SMALL OUTLINE				70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G28		3.6 V			Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY							70 ns
M48Z512A-70CS1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	5		8	SMALL OUTLINE				70 Cel		512KX8	512K	0 Cel		DUAL		R-PDSO-G32		5.5 V			Not Qualified	4194304 bit	4.75 V	REQUIRES A SNAPHAT BATTERY PACKAGE							70 ns
M48Z35Y-70MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0			YES	.003 Amp	18.1 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.