SOP SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
23K256-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	262144 bit	2.7 V		e3	40	260	NO	.000004 Amp	4.9 mm
CY62256NLL-70SNXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260		.000005 Amp	17.9324 mm	70 ns
CY62148ELL-55SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	4194304 bit	4.5 V		e4	20	260	YES	.000007 Amp	20.4465 mm	55 ns
CY62148ELL-55SXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	4194304 bit	4.5 V		e4	20	260		.000007 Amp	20.4465 mm	55 ns
23K640-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.000004 Amp	4.9 mm
CY62256NLL-70SNXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260		.000005 Amp	17.9324 mm	70 ns
CY62256NLL-55SNXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260		.00001 Amp	17.9324 mm	55 ns
CY14E256LA-SZ25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260	YES	.008 Amp	20.726 mm	25 ns
23LC1024T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.9 mm
23LC1024-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.9 mm
CY62256NLL-55SNXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260		.00001 Amp	17.9324 mm	55 ns
CY14B256LA-SZ45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	2.7 V			20	260		.005 Amp	20.726 mm	45 ns
APS6404L-3SQR-SN	Ap Memory Technology	HYPERRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	7 mA	835584 words		3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel			8MX8	8M		-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	133 MHz	3.9 mm		67108864 bit	2.7 V						.00025 Amp	4.9 mm
CY62128ELL-45SXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.000004 Amp	20.4465 mm	45 ns
AS6C62256-55SIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDSO-G28	3	5.5 V	3.048 mm		8.6 mm	Not Qualified	262144 bit	2.7 V		e3/e6	40	250		.00002 Amp	18.491 mm	55 ns
CY14E256LA-SZ25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260	YES	.008 Amp	20.726 mm	25 ns
CY14E256LA-SZ45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260	YES	.008 Amp	20.726 mm	45 ns
CY14B256LA-SZ45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	2.7 V		e3	30	260		.005 Amp	20.726 mm	45 ns
23LCV1024T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	SEPARATE		3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V		e3	30	260	NO	.00001 Amp	4.9 mm
IS62C1024AL-35QLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	5.5 V	3.05 mm		11.305 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.00001 Amp	20.495 mm	35 ns
IS62C256AL-45ULI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel			32KX8	32K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G28	3	5.5 V	2.84 mm		8.405 mm	Not Qualified	262144 bit	4.5 V		e3	40	260			18.11 mm	45 ns
CY62128ELL-45SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.000004 Amp	20.4465 mm	45 ns
CY14B256LA-SZ25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	2.7 V		e3	30	260		.005 Amp	20.726 mm	25 ns
IS62C256AL-45ULI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28		5.5 V	2.84 mm		8.405 mm	Not Qualified	262144 bit	4.5 V		e3	10	260		.00002 Amp	18.11 mm	45 ns
AS6C4008-55SINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	3/5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel		DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	4194304 bit	2.7 V		e3/e6				.00003 Amp		55 ns
CY14E256LA-SZ45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260	YES	.008 Amp	20.726 mm	45 ns
CAT24C44VI-GT3	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel			16X16	16		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e4	30	260		.00003 Amp	4.9 mm
CAT24C44VI-G	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel			16X16	16		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e4		260		.00003 Amp	4.9 mm	375 ns
IS62C1024AL-35QLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel			128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	5.5 V	3 mm		11.305 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260			20.445 mm	35 ns
CAT24C44VI-T3	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel			16X16	16		-40 Cel	TIN	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e3	30	260		.00003 Amp	4.9 mm
CAT24C44VI-TE13	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel			16X16	16		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e3					4.9 mm	375 ns
CAT24C44VIT3	Catalyst Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel			16X16	16		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e3					4.9 mm
AS6C4008-55SIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	3	3/5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	4194304 bit	2.7 V			40	260		.00003 Amp		55 ns
CAT24C44VI	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5	5	16	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel			16X16	16		-40 Cel	TIN	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V		e3		260		.00003 Amp	4.9 mm	375 ns
CY14B256LA-SZ25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	2.7 V			20	260		.005 Amp	20.726 mm	25 ns
23LCV1024-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	SEPARATE		3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.9 mm
23A1024-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE		1.8/2	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	1.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	2.2 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	1048576 bit	1.7 V		e3	40	260	NO	.000004 Amp	4.9 mm
23LC512-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	524288 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.9 mm
23K256T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2.7 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	20 MHz	3.9 mm	Not Qualified	262144 bit	2.7 V		e3	40	260	NO	.000004 Amp	4.9 mm
CY14B101LA-SZ45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel			128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.5 mm	Not Qualified	1048576 bit	2.7 V		e3	20	260		.005 Amp	20.726 mm	45 ns
23LCV512-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON			8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		3-STATE	64KX8	64K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	20 MHz	3.9 mm		524288 bit	2.5 V		e3	40	260	NO	.00001 Amp	4.9 mm
AS6C1008-55SINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3		8	SMALL OUTLINE	SOP32,.56		1.27 mm	85 Cel		3-STATE	128KX8	128K	1.5 V	-40 Cel		DUAL	1	R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm		1048576 bit	2.7 V	LG_MAX				YES	.00003 Amp	20.75 mm	55 ns
CY62256VNLL-70SNXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.4 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	3.6 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	2.7 V		e4	20	260		.000006 Amp	17.9324 mm	70 ns
23LC1024-I/SNVAO	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8		5.5 V	1.75 mm	20 MHz	3.9 mm		1048576 bit	2.5 V		e3			NO	.00001 Amp	4.9 mm
CY14B101LA-SZ45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3	3/3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs	1.27 mm	85 Cel			128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.5 mm	Not Qualified	1048576 bit	2.7 V		e3	20	260		.005 Amp	20.726 mm	45 ns
CY14V101QS-SF108XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel			128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm		1048576 bit	2.7 V		e4		260			10.2865 mm
23A256-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.5 V	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	262144 bit	1.5 V		e3	40	260	NO	.000001 Amp	4.9 mm
APS6404L-3SQRX-SN	Ap Memory Technology	HYPERRAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	7 mA	835584 words		3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	105 Cel			8MX8	8M		-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	133 MHz	3.9 mm		67108864 bit	2.7 V						.00025 Amp	4.9 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.