Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Samsung |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.45 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
3 mm |
8.38 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
18.29 mm |
70 ns |
|||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
3 mm |
11.43 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
20.47 mm |
55 ns |
|||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
3 mm |
11.43 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
20.47 mm |
55 ns |
|||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.45 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
3 mm |
8.38 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
240 |
.00001 Amp |
18.29 mm |
55 ns |
||||||||||||||
|
Samsung |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
3 |
Not Qualified |
1048576 bit |
260 |
.00001 Amp |
70 ns |
|||||||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
3 mm |
8.38 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
YES |
.00005 Amp |
18.29 mm |
100 ns |
||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
3 mm |
8.38 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.000003 Amp |
18.29 mm |
55 ns |
||||||||||||||||
Samsung |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
3 mm |
11.43 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.00001 Amp |
20.47 mm |
70 ns |
||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
3 mm |
11.43 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
.00005 Amp |
20.47 mm |
70 ns |
||||||||||||||
Sharp Corporation |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
3.6 V |
2.6 mm |
8.6 mm |
Not Qualified |
262144 bit |
2.7 V |
e0 |
18 mm |
200 ns |
||||||||||||||||||||||||
Fujitsu Semiconductor America |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
2.8 mm |
8.6 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
17.75 mm |
70 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
NON-VOLATILE SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65 mA |
8192 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
2.794 mm |
8.6865 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
260 |
.00075 Amp |
18.3895 mm |
45 ns |
||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
85 mA |
8192 words |
COMMON |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
0 Cel |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
2.794 mm |
8.6865 mm |
65536 bit |
4.5 V |
YES |
.0015 Amp |
18.3895 mm |
25 ns |
|||||||||||||||||||
|
Infineon Technologies |
NON-VOLATILE SRAM |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
85 mA |
8192 words |
COMMON |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
1.27 mm |
85 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
2.794 mm |
8.6865 mm |
65536 bit |
4.5 V |
YES |
.0025 Amp |
18.3895 mm |
25 ns |
|||||||||||||||||||
|
Cypress Semiconductor |
NON-VOLATILE SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
32768 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.4 |
SRAMs |
1.27 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
2.67 mm |
7.505 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
260 |
.0015 Amp |
17.905 mm |
25 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
20.6 mm |
85 ns |
||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
YES |
20.6 mm |
70 ns |
||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
2.7 mm |
8.8 mm |
Not Qualified |
262144 bit |
2.7 V |
e0 |
YES |
18.5 mm |
120 ns |
||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
20.6 mm |
85 ns |
||||||||||||||||||||||||
|
Microchip Technology |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
10 mA |
65536 words |
COMMON |
8 |
SMALL OUTLINE |
SOP8,.23 |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
2.5 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-G8 |
1 |
5.5 V |
1.75 mm |
20 MHz |
3.9 mm |
524288 bit |
2.5 V |
e3 |
40 |
260 |
NO |
.00001 Amp |
4.9 mm |
||||||||||||||
|
Microchip Technology |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
5 mA |
32768 words |
COMMON |
8 |
SMALL OUTLINE |
SOP8,.23 |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2.7 V |
-40 Cel |
Matte Tin (Sn) |
DUAL |
1 |
R-PDSO-G8 |
3.6 V |
1.75 mm |
66 MHz |
3.9 mm |
262144 bit |
2.7 V |
e3 |
NO |
.0003 Amp |
4.9 mm |
|||||||||||||||||
|
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
4X4 |
4 |
-55 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
9.9 mm |
53 ns |
||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.002 Amp |
120 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
12 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
2 V |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
150 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
16X4 |
16 |
0 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
2.108 mm |
5.3085 mm |
64 bit |
4.5 V |
10.11 mm |
27 ns |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
.00005 Amp |
100 ns |
||||||||||||||||||||||||
|
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
4X4 |
4 |
-55 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
9.9 mm |
53 ns |
||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
150 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
3.1 mm |
11.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
WD-MAX; SEATED HGT-CAL |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
20.7 mm |
85 ns |
|||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
NMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-PDSO-G24 |
2.65 mm |
7.5 mm |
Not Qualified |
4096 bit |
15.4 mm |
35 ns |
||||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
16X4 |
16 |
0 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
2.65 mm |
7.5 mm |
64 bit |
4.5 V |
10.3 mm |
27 ns |
|||||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
NMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
TOTEM POLE |
512X8 |
512 |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
4096 bit |
4.5 V |
NO |
15.4 mm |
55 ns |
|||||||||||||||||||||||
|
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
4X4 |
4 |
-55 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
9.9 mm |
53 ns |
||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
2 V |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
120 ns |
||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
NMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
TOTEM POLE |
512X8 |
512 |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
4096 bit |
4.5 V |
NO |
15.4 mm |
35 ns |
|||||||||||||||||||||||
|
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
4X4 |
4 |
-55 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
9.9 mm |
53 ns |
||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
85 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
16X4 |
16 |
0 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
2.108 mm |
5.3085 mm |
64 bit |
4.5 V |
10.11 mm |
27 ns |
|||||||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
12 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
2 V |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
150 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
2 V |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
65536 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
100 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
16X4 |
16 |
0 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
2.65 mm |
7.5 mm |
64 bit |
4.5 V |
10.3 mm |
27 ns |
|||||||||||||||||||||||||||
|
Texas Instruments |
STANDARD SRAM |
MILITARY |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
4X4 |
4 |
-55 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
9.9 mm |
53 ns |
||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
DUAL |
R-PDSO-G32 |
Not Qualified |
1048576 bit |
.00005 Amp |
120 ns |
||||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
NMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
TOTEM POLE |
512X8 |
512 |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
4096 bit |
4.5 V |
NO |
15.4 mm |
45 ns |
|||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
120 ns |
||||||||||||||||||||||
Texas Instruments |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
262144 bit |
NOT SPECIFIED |
NOT SPECIFIED |
.00005 Amp |
100 ns |
||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
NMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
TOTEM POLE |
512X8 |
512 |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
4096 bit |
4.5 V |
NO |
15.4 mm |
35 ns |
|||||||||||||||||||||||
Texas Instruments |
CACHE TAG SRAM |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
NMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
TOTEM POLE |
512X8 |
512 |
0 Cel |
DUAL |
1 |
R-PDSO-G24 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
4096 bit |
4.5 V |
NO |
15.4 mm |
45 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.