SOP SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
STK14C88-NF25I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	32768 words		5	5	8	SMALL OUTLINE	SOP32,.4		SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260		.0015 Amp	20.726 mm	25 ns
STK14C88-NF25ITR	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	32768 words		5	5	8	SMALL OUTLINE	SOP32,.4		SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260		.0015 Amp	20.726 mm	25 ns
R1LP0408DSP-5SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	3	5.5 V	3.05 mm		11.4 mm	Not Qualified	4194304 bit	4.5 V						.00001 Amp	20.75 mm	55 ns
48LM01-I/SM	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	COMMON			8	SMALL OUTLINE	SOP8,.3			1.27 mm	85 Cel		3-STATE	128KX8	128K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	2.03 mm	66 MHz	5.25 mm		1048576 bit	2.7 V		e3		260	NO	.0002 Amp	5.26 mm
CY14E101J2-SXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		5	5	8	SMALL OUTLINE	SOP8,.25		SRAMs	1.27 mm	85 Cel			128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm	Not Qualified	1048576 bit	4.5 V		e4	30	260		.00015 Amp	4.889 mm
STK14C88-NF25	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	97 mA	32768 words		5	5	8	SMALL OUTLINE	SOP32,.4		SRAMs	1.27 mm	70 Cel			32KX8	32K		0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260		.0015 Amp	20.726 mm	25 ns
R1RW0416DSB-2LR#D1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE					70 Cel			256KX16	256K		0 Cel		DUAL		R-PDSO-G44	3	3.6 V					4194304 bit	3 V								12 ns
23A640T-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	85 Cel		3-STATE	8KX8	8K	1.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	65536 bit	1.5 V		e3	40	260	NO	.000001 Amp	4.9 mm
23LC1024T-E/SN	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	125 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V		e3		260	NO	.00002 Amp	4.9 mm
KM681000CLG-5	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00002 Amp	20.47 mm	55 ns
KM681000CLG-5L	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00001 Amp	20.47 mm	55 ns
23A640-I/SN	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	85 Cel		3-STATE	8KX8	8K	1.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	65536 bit	1.5 V		e3	40	260	NO	.000001 Amp	4.9 mm
71V424L10PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V				Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp		10 ns
AS6C1008-55SINL	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE				1.27 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm		1048576 bit	2.7 V	LG-MAX						20.75 mm	55 ns
HM628128BLFP-75	Hitachi	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	1	5.5 V	3 mm		11.3 mm	Not Qualified	1048576 bit	4.5 V		e0	40	260		.00005 Amp	20.45 mm	70 ns
HM628128BLFP-7SL	Hitachi	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.3 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.000015 Amp	20.45 mm	70 ns
HM628512BLFP-7SL	Renesas Electronics	STANDARD SRAM	OTHER	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	-20 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm		11.3 mm	Not Qualified	4194304 bit	4.5 V	LG-MAX					.00001 Amp	20.95 mm	70 ns
HY628400ALLG-55	Sk Hynix	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	3.048 mm		11.2015 mm	Not Qualified	4194304 bit	4.5 V		e0					20.498 mm	55 ns
LH5160N-10L	Sharp Corporation	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel			8KX8	8K		-10 Cel	TIN BISMUTH	DUAL		R-PDSO-G28		5.5 V	2.6 mm		8.6 mm	Not Qualified	65536 bit	4.5 V		e6	NOT SPECIFIED	NOT SPECIFIED			18 mm	100 ns
R1LV0408DSP-5SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	3.05 mm		11.4 mm	Not Qualified	4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	YES	.0003 Amp	20.75 mm	55 ns
AS6C62256-55SCN	Alliance Memory	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDSO-G28	3	5.5 V	3.048 mm		8.6 mm	Not Qualified	262144 bit	2.7 V		e3/e6				.00002 Amp	18.491 mm	55 ns
RMWV6416AGSD-5S2#AA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words				16	SMALL OUTLINE		8			85 Cel			4MX16	4M		-40 Cel		DUAL		R-PDSO-G52	3	3.6 V					67108864 bit	2.7 V								55 ns
71V424S12PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	12 ns
74F189SC	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE				1.27 mm	70 Cel			16X4	16		0 Cel		DUAL		R-PDSO-G16		5.5 V	1.753 mm		3.899 mm		64 bit	4.5 V							9.902 mm	27 ns
CY14E256L-SZ35XI	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	SOP32,.4		SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260		.0015 Amp	20.726 mm	35 ns
CY62128BLL-70SIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	85 Cel			128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	1048576 bit	4.5 V		e0	20	220			20.4465 mm	70 ns
FM25W256-S	Ramtron International	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			7 mA	32768 words			3/5	8	SMALL OUTLINE	SOP8,.25		SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G8						Not Qualified	262144 bit			e0		240		.00015 Amp
IS66WVS4M8ALL-104NLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	1.8		8	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel			4MX8	4M	1.65 V	-40 Cel		DUAL	1	R-PDSO-G8		1.95 V	1.75 mm	104 MHz	3.9 mm		33554432 bit	1.65 V					NO	.0002 Amp	4.9 mm
IS66WVS4M8BLL-104NLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel			4MX8	4M	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	104 MHz	3.9 mm		33554432 bit	2.7 V					NO	.0002 Amp	4.9 mm
M5M51008DVP-70HIBT	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE					85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		5.5 V					1048576 bit	4.5 V								70 ns
M5M5408BFP-70H	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-G32		5.5 V				Not Qualified	4194304 bit	4.5 V						.000015 Amp		70 ns
MB8464A-10LLPF	Fujitsu	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	65536 bit			e0				.000002 Amp		100 ns
N25S818HAS21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.25		SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.91 mm	Not Qualified	262144 bit	1.7 V		e3	30	260		.0000005 Amp	4.9 mm
STK12C68-SF45	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5			1.27 mm	70 Cel		3-STATE	8KX8	8K	4.5 V	0 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm		8.6865 mm		65536 bit	4.5 V					YES	.0015 Amp	18.3895 mm	45 ns
U632H64BSC25	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	3	5.5 V	2.54 mm		8.75 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	18.1 mm	25 ns
U632H64BSC45	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	3	5.5 V	2.54 mm		8.75 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	18.1 mm	45 ns
U632H64BSK45G1	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	85 Cel			8KX8	8K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.54 mm		8.75 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	18.1 mm	45 ns
U632H64SC25	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	3	5.5 V	2.54 mm		8.75 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	18.1 mm	25 ns
71V424L10PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	18.41 mm	10 ns
71V424L12PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	155 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	18.41 mm	12 ns
71V424S15PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	15 ns
BS62LV256SC70	Brilliance Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON		3/5	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	1.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28	3					Not Qualified	262144 bit			e0		240		.0000002 Amp		70 ns
CY14B512PA-SFXIT	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4		SRAMs	1.27 mm	85 Cel			64KX8	64K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.336 mm		7.4925 mm	Not Qualified	524288 bit	2.7 V		e3				.00025 Amp	10.2865 mm
CY62128BLL-70SI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	1048576 bit	4.5 V		e0	20	220			20.4465 mm	70 ns
HY62WT08081E-DG70C	Sk Hynix	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3		8	SMALL OUTLINE	SOP28,.47			1.27 mm	70 Cel	NO	3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1, (NON-MUXED)	R-PDSO-G28		3.6 V	2.794 mm		8.69 mm	Not Qualified	262144 bit	2.7 V	IT ALSO OPERATES FROM 4.5 TO 5.5V				YES	.000005 Amp	18.39 mm	70 ns
IS62C5128BL-45QLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	5.5 V	3.12 mm		11.305 mm	Not Qualified	4194304 bit	4.5 V		e3	30	260		.000015 Amp	20.495 mm	45 ns
IS62C5128BL-45QLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3					Not Qualified	4194304 bit			e3	30	260		.000015 Amp		45 ns
IS62LV256AL-45ULI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28		3.63 V	2.84 mm		8.405 mm	Not Qualified	262144 bit	2.97 V		e3	10	260		.00002 Amp	18.11 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.