SSOP SRAM 64

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY14B101LA-SP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5 mm	Not Qualified	1048576 bit	2.7 V	e4	20	260		.005 Amp	15.875 mm	25 ns
CY14B256LA-SP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	2.7 V	e4	30	260		.005 Amp	15.875 mm	45 ns
CY14B256LA-SP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	2.7 V	e4	30	260		.005 Amp	15.875 mm	45 ns
CY14B101LA-SP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5 mm	Not Qualified	1048576 bit	2.7 V	e4	20	260		.005 Amp	15.875 mm	45 ns
CY14B101LA-SP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5 mm	Not Qualified	1048576 bit	2.7 V	e4	20	260		.005 Amp	15.875 mm	25 ns
CY14B256LA-SP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	2.7 V	e4	30	260		.005 Amp	15.875 mm	25 ns
TMS4C2973DT-26	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		3.3		12	SMALL OUTLINE, SHRINK PITCH				1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		3.6 V	3 mm	9.9 mm	Not Qualified	2949120 bit	3 V						18.4 mm	21 ns
TMS4C2973-24DTL	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		3.3		12	SMALL OUTLINE, SHRINK PITCH				1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		3.6 V	3 mm	9.9 mm	Not Qualified	2949120 bit	3 V						18.4 mm	19 ns
TMS4C2973DT-24	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		3.3		12	SMALL OUTLINE, SHRINK PITCH				1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		3.6 V	3 mm	9.9 mm	Not Qualified	2949120 bit	3 V						18.4 mm	19 ns
TMS4C2972-28DT	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	50 mA	245760 words		5	5	12	SMALL OUTLINE, SHRINK PITCH	SOP36,.47,40		Other Memory ICs	1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		5.5 V	3 mm	9.9 mm	Not Qualified	2949120 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.015 Amp	18.4 mm	23 ns
TMS4C2972-24DTL	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		5		12	SMALL OUTLINE, SHRINK PITCH				1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		5.5 V	3 mm	9.9 mm	Not Qualified	2949120 bit	4.5 V						18.4 mm	19 ns
TMS4C2973DT-28	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		3.3		12	SMALL OUTLINE, SHRINK PITCH				1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		3.6 V	3 mm	9.9 mm	Not Qualified	2949120 bit	3 V						18.4 mm	23 ns
TMS4C2972-24DT	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	50 mA	245760 words		5	5	12	SMALL OUTLINE, SHRINK PITCH	SOP36,.47,40		Other Memory ICs	1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		5.5 V	3 mm	9.9 mm	Not Qualified	2949120 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.015 Amp	18.4 mm	19 ns
TMS4C2972-26DT	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	50 mA	245760 words		5	5	12	SMALL OUTLINE, SHRINK PITCH	SOP36,.47,40		Other Memory ICs	1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		5.5 V	3 mm	9.9 mm	Not Qualified	2949120 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		.015 Amp	18.4 mm	21 ns
TMS4C2973-26DTL	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		3.3		12	SMALL OUTLINE, SHRINK PITCH				1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		3.6 V	3 mm	9.9 mm	Not Qualified	2949120 bit	3 V						18.4 mm	21 ns
TMS4C2972-26DTL	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		5		12	SMALL OUTLINE, SHRINK PITCH				1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		5.5 V	3 mm	9.9 mm	Not Qualified	2949120 bit	4.5 V						18.4 mm	21 ns
TMS4C2973-28DTL	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		3.3		12	SMALL OUTLINE, SHRINK PITCH				1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		3.6 V	3 mm	9.9 mm	Not Qualified	2949120 bit	3 V						18.4 mm	23 ns
TMS4C2972-28DTL	Texas Instruments	MULTI-PORT SRAM	COMMERCIAL	36	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		245760 words		5		12	SMALL OUTLINE, SHRINK PITCH				1 mm	70 Cel		240KX12	240K		0 Cel		DUAL		R-PDSO-G36		5.5 V	3 mm	9.9 mm	Not Qualified	2949120 bit	4.5 V						18.4 mm	23 ns
5962-9674402QYX	Analog Devices	STANDARD SRAM	MILITARY	240	SSOP	SQUARE		UNSPECIFIED	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	SMALL OUTLINE, SHRINK PITCH				.5 mm	125 Cel		128KX32	128K		-55 Cel		DUAL		S-XDSO-G240		3.47 V	4.2 mm	32 mm	Not Qualified	4194304 bit	3.13 V						32 mm
5962-9674402QYC	Analog Devices	STANDARD SRAM	MILITARY	240	SSOP	SQUARE		UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	SMALL OUTLINE, SHRINK PITCH				.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	DUAL		S-XDSO-G240		3.47 V	4.2 mm	32 mm	Not Qualified	4194304 bit	3.13 V	e4					32 mm
N04M1618L1AT-85I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	SMALL OUTLINE, SHRINK PITCH				.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		2.3 V		10.16 mm	Not Qualified	4194304 bit	1.4 V						18.41 mm	85 ns
N04M1618L1AT-150I	Onsemi	STANDARD SRAM	INDUSTRIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	SMALL OUTLINE, SHRINK PITCH				.8 mm	85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		2.3 V		10.16 mm	Not Qualified	4194304 bit	1.4 V						18.41 mm	150 ns
M48Z32V-35MT1F	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP44,.5,32		SRAMs	.81 mm	70 Cel		32KX8	32K		0 Cel	TIN/NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	e3/e4	NOT SPECIFIED	NOT SPECIFIED		.0005 Amp	18.1 mm	35 ns
M48Z32V-70MT6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE, SHRINK PITCH				.8 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V						18.1 mm	70 ns
M48Z32V-35MT6F	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP44,.5,32		SRAMs	.8 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V		10	260		.0005 Amp	18.1 mm	35 ns
M48Z32V-70MT1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE, SHRINK PITCH				.8 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V						18.1 mm	70 ns
M48Z32V-35MT6E	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP44,.5,32		SRAMs	.8 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V		10	260		.0005 Amp	18.1 mm	35 ns
M48Z32V-35MT1E	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP44,.5,32		SRAMs	.81 mm	70 Cel		32KX8	32K		0 Cel	TIN/NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	e3/e4	NOT SPECIFIED	NOT SPECIFIED		.0005 Amp	18.1 mm	35 ns
M48Z32V-35MT1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP44,.5,32		SRAMs	.8 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	e0				.0005 Amp	18.1 mm	35 ns
M48Z32V-70MT1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE, SHRINK PITCH				.8 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V						18.1 mm	70 ns
M48Z32V-35MT1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP44,.5,32		SRAMs	.8 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	e0				.0005 Amp	18.1 mm	35 ns
M48Z32V-35MT6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP44,.5,32		SRAMs	.8 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	e0				.0005 Amp	18.1 mm	35 ns
M48Z32V-35MT6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	32768 words		3.3	3.3	8	SMALL OUTLINE, SHRINK PITCH	SOP44,.5,32		SRAMs	.8 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	e0				.0005 Amp	18.1 mm	35 ns
M48Z32V-70MT6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	44	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE, SHRINK PITCH				.8 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V						18.1 mm	70 ns
74HC670DB	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3		Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G16	1	6 V	2 mm	5.3 mm	Not Qualified	16 bit	2 V	e4	30	260			6.2 mm	59 ns
74HC670DB,118	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, SHRINK PITCH				.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm	5.3 mm	Not Qualified	16 bit	2 V	e4					6.2 mm	59 ns
74HCT670DB-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, SHRINK PITCH				.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	5.5 V	2 mm	5.3 mm	Not Qualified	16 bit	4.5 V	e4					6.2 mm	60 ns
74HCT670DB,118	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, SHRINK PITCH				.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	5.5 V	2 mm	5.3 mm	Not Qualified	16 bit	4.5 V	e4					6.2 mm	60 ns
74HC670DB,112	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3		Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm	5.3 mm	Not Qualified	16 bit	2 V	e4					6.2 mm	59 ns
74HC670DB-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, SHRINK PITCH				.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm	5.3 mm	Not Qualified	16 bit	2 V	e4					6.2 mm	59 ns
74HCT670DB	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3		Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G16	1	5.5 V	2 mm	5.3 mm	Not Qualified	16 bit	4.5 V	e4	30	260			6.2 mm	60 ns
74HCT670DB,112	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3		Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	5.5 V	2 mm	5.3 mm	Not Qualified	16 bit	4.5 V	e4					6.2 mm	60 ns
5962R2020201VXC	Infineon Technologies	STANDARD SRAM	MILITARY	54	SSOP	RECTANGULAR	200k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38534 Class V	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, SHRINK PITCH	SOP54,.56,32			.8 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		DUAL	1	R-PDSO-G54		3.6 V	3.038 mm	11.836 mm	Qualified	16777216 bit	2.2 V				YES	.05 Amp	22.403 mm	10 ns
CYPT1061G30-10GGMB	Infineon Technologies	STANDARD SRAM	MILITARY	54	SSOP	RECTANGULAR	200k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, SHRINK PITCH	SOP54,.56,32			.8 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		DUAL	1	R-PDSO-G54		3.6 V	3.038 mm	11.836 mm		16777216 bit	2.2 V				YES	.05 Amp	22.403 mm	10 ns
CYRS1061G30-10GGMB	Infineon Technologies	STANDARD SRAM	MILITARY	54	SSOP	RECTANGULAR	200k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	SMALL OUTLINE, SHRINK PITCH	SOP54,.56,32			.8 mm	125 Cel	3-STATE	1MX16	1M	1 V	-55 Cel		DUAL	1	R-PDSO-G54	1	3.6 V	3.038 mm	11.836 mm		16777216 bit	2.2 V				YES	.05 Amp	22.403 mm	10 ns
CY14B101KA-SP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	70 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4	8	SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	1048576 bit	2.7 V	e4	20	260		.005 Amp	15.875 mm	25 ns
STK17TA8-RF35I	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS		GULL WING			70 mA				3/3.3		SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel					-40 Cel	MATTE TIN	DUAL		R-PDSO-G48	3				Not Qualified			e3	20	260		.003 Amp		35 ns
CY14B101KA-SP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	52 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4	8	SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	1048576 bit	2.7 V	e4	20	260		.005 Amp	15.875 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.