SSOP SRAM 64

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY14B256KA-SP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	32768 words	COMMON	3		8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4			.635 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm		262144 bit	2.7 V	e4	30	260	YES	.005 Amp	15.875 mm	45 ns
CY14B101MA-SP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			70 mA	65536 words			3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-G48					Not Qualified	1048576 bit						.005 Amp		45 ns
CY14B256KA-SP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	32768 words	COMMON	3		8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4			.635 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm		262144 bit	2.7 V	e4	30	260	YES	.005 Amp	15.875 mm	45 ns
CY14B101KA-SP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	70 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4	8	SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	1048576 bit	2.7 V	e4	20	260		.005 Amp	15.875 mm	25 ns
CY14B101MA-SP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			70 mA	65536 words			3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-G48					Not Qualified	1048576 bit						.005 Amp		25 ns
CY14B101KA-SP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	52 mA	65536 words		3	3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4	8	SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	1048576 bit	2.7 V	e4	20	260		.005 Amp	15.875 mm	45 ns
CY14B101LA-SP45XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	52 mA	131072 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5 mm	Not Qualified	1048576 bit	2.7 V	e4	20	260		.005 Amp	15.875 mm	45 ns
CY14B256KA-SP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	3		8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4			.635 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm		262144 bit	2.7 V	e4	30	260	YES	.005 Amp	15.875 mm	25 ns
CY14B101MA-SP45XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			70 mA	65536 words			3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-G48					Not Qualified	1048576 bit						.005 Amp		45 ns
CY14B101MA-SP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			70 mA	65536 words			3/3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		64KX16	64K		-40 Cel		DUAL		R-PDSO-G48					Not Qualified	1048576 bit						.005 Amp		25 ns
CY14B256KA-SP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	3		8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4			.635 mm	85 Cel	3-STATE	32KX8	32K	2.7 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm		262144 bit	2.7 V	e4	30	260	YES	.005 Amp	15.875 mm	25 ns
CY14B256LA-SP25XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel		32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	2.7 V	e4	30	260		.005 Amp	15.875 mm	25 ns
M66220FP	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	42	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words	COMMON	5	5	8	SMALL OUTLINE, SHRINK PITCH	SOP42,.5,32		SRAMs	.8 mm	70 Cel	3-STATE	256X8	256		0 Cel		DUAL	2	R-PDSO-G42		5.5 V	2.4 mm	8.4 mm	Not Qualified	2048 bit	4.5 V						17.5 mm	70 ns
M66222FP	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	42	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	256 words	COMMON	5	5	8	SMALL OUTLINE, SHRINK PITCH	SOP42,.5,32		SRAMs	.8 mm	70 Cel	3-STATE	256X8	256	4.5 V	0 Cel		DUAL	2	R-PDSO-G42		5.5 V	2.4 mm	8.4 mm	Not Qualified	2048 bit	4.5 V					.0001 Amp	17.5 mm	70 ns
IDT71V218S15PV	Renesas Electronics	CACHE TAG SRAM	COMMERCIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	155 mA	8192 words		3.3	3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	70 Cel	3-STATE	8KX16	8K		0 Cel	Tin/Lead (Sn85Pb15)	DUAL	1	R-PDSO-G48	1	3.465 V	2.794 mm	7.5 mm	Not Qualified	131072 bit	3.135 V	e0	20	225	YES	.001 Amp	15.875 mm	15 ns
71V218S15PV	Renesas Electronics	CACHE TAG SRAM	COMMERCIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			155 mA	8192 words		3.3	3.3	16	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	70 Cel		8KX16	8K		0 Cel	TIN LEAD	DUAL		R-PDSO-G48	1				Not Qualified	131072 bit		e0	20	225		.001 Amp		15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.