TBGA SRAM 1,589

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
MT55L256V18F1F-12	Micron Technology	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm	83 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	.01 Amp	15 mm	9 ns
MT57W1MH18CF-3	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	525 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm	333 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	.255 Amp	15 mm	.45 ns
MT55L256V36PF-6IT	Micron Technology	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		256KX36	256K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V		e1		15 mm	3.5 ns
MT57V1MH18AF-7.5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	225 mA	1048576 words	COMMON	2.5	1.5/1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	2.4 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		2.6 V	1.2 mm	133 MHz	13 mm	Not Qualified	18874368 bit	2.4 V	PIPELINED ARCHITECTURE	e0		15 mm	3.6 ns
MT57W512H36BF-3	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	710 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm	333 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		15 mm	.45 ns
MT58L64L32PF-10IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words		3.3		32	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64KX32	64K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm		13 mm	Not Qualified	2097152 bit	3.135 V		e1		15 mm	5 ns
MT55L512Y32PF-7.5	Micron Technology	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX32	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm	133 MHz	13 mm	Not Qualified	16777216 bit	3.135 V	PIPELINED ARCHITECTURE	e0	.03 Amp	15 mm	4.2 ns
MT55L128V36P1F-10IT	Micron Technology	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	4718592 bit	3.135 V		e0	.01 Amp	15 mm	5 ns
MT58L2MY18DF-5	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm		15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e1		17 mm	3.1 ns
MT58L1MY36DF-5	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm		15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e1		17 mm	3.1 ns
MT58L1MY32DF-10	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		32	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		1MX32	1M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm		15 mm	Not Qualified	33554432 bit	3.135 V	PIPELINED ARCHITECTURE	e1		17 mm	5 ns
MT57W512H36JF-3.3	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	475 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm	300 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		15 mm	.45 ns
MT55L128L36P1F-6IT	Micron Technology	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm	166 MHz	13 mm	Not Qualified	4718592 bit	3.135 V		e0	.01 Amp	15 mm	3.5 ns
MT57V1MH18EF-6	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	200 mA	1048576 words	COMMON	2.5	1.5/1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	2.4 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		2.6 V	1.2 mm	167 MHz	13 mm	Not Qualified	18874368 bit	2.4 V	PIPELINED ARCHITECTURE	e0	.15 Amp	15 mm	3 ns
MT57W4MH8JF-4	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		4MX8	4M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm		15 mm	Not Qualified	33554432 bit	1.7 V	PIPELINED ARCHITECTURE	e1		17 mm	.45 ns
MT58L64L32DF-7.5	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	280 mA	65536 words	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm	133 MHz	13 mm	Not Qualified	2097152 bit	3.135 V		e0	.01 Amp	15 mm	4 ns
MT57W4MH8CF-7.5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		4MX8	4M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm		15 mm	Not Qualified	33554432 bit	1.7 V	PIPELINED ARCHITECTURE	e1		17 mm	.5 ns
MT58V512V32DF-10	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	524288 words	COMMON	2.5	2.5	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX32	512K	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		2.625 V	1.2 mm	100 MHz	13 mm	Not Qualified	16777216 bit	2.375 V	PIPELINED ARCHITECTURE	e0	.03 Amp	15 mm	5 ns
MT57V1MH18AF-6	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	1048576 words	COMMON	2.5	1.5/1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	2.4 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		2.6 V	1.2 mm	167 MHz	13 mm	Not Qualified	18874368 bit	2.4 V	PIPELINED ARCHITECTURE	e0		15 mm	3 ns
MT58L64L36DF-6	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	340 mA	65536 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm	166 MHz	13 mm	Not Qualified	2359296 bit	3.135 V		e0	.01 Amp	15 mm	3.5 ns
MT58L512V18PF-5	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	525 mA	524288 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V		e0	.01 Amp	15 mm	3.1 ns
MT57V256H36PF-6	Micron Technology	DDR SRAM		165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	262144 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm		3-STATE	256KX36	256K	2.4 V		Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		2.6 V	1.2 mm	167 MHz	13 mm	Not Qualified	9437184 bit	2.4 V	PIPELINED ARCHITECTURE	e0	.075 Amp	15 mm	3 ns
MT58L64V32PF-10IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		65536 words		3.3		32	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64KX32	64K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm		13 mm	Not Qualified	2097152 bit	3.135 V		e1		15 mm	5 ns
MT54W2MH18JF-5	Micron Technology	QDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		18	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1		17 mm	.45 ns
MT57V512H36EF-5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	524288 words	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	2.4 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		2.6 V	1.2 mm	200 MHz	13 mm	Not Qualified	18874368 bit	2.4 V	PIPELINED ARCHITECTURE	e0	.18 Amp	15 mm	2.4 ns
MT58V1MV18PF-10	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	1048576 words	COMMON	2.5	2.5	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	2.38 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		2.625 V	1.2 mm	100 MHz	13 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e0	.01 Amp	15 mm	5 ns
MT58L64L32PF-10	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	225 mA	65536 words	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm	100 MHz	13 mm	Not Qualified	2097152 bit	3.135 V		e0	.01 Amp	15 mm	5 ns
MT57V1MH36EF-6	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		2.6 V	1.2 mm		15 mm	Not Qualified	37748736 bit	2.4 V	PIPELINED ARCHITECTURE	e1		17 mm	3 ns
MT58L64L32FF-7.5	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	245 mA	65536 words	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm	113 MHz	13 mm	Not Qualified	2097152 bit	3.135 V		e0	.01 Amp	15 mm	7.5 ns
MT58L128V32P1F-5	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	525 mA	131072 words	COMMON	3.3	2.5,3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX32	128K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm	200 MHz	13 mm	Not Qualified	4194304 bit	3.135 V	PIPELINED ARCHITECTURE	e0	.01 Amp	15 mm	2.8 ns
MT55L1MY18FF-11	Micron Technology	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	165 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm	90 MHz	13 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	.03 Amp	15 mm	8.5 ns
MT57W512H36BF-5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	445 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		15 mm	.45 ns
MT58L256L32PF-5IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		32	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		256KX32	256K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm		13 mm	Not Qualified	8388608 bit	3.135 V		e1		15 mm	3.1 ns
MT57W4MH9CF-4	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		9	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		4MX9	4M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1		17 mm	.45 ns
MT58L1MY32PF-5	Micron Technology	STANDARD SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX32	1M	3.14 V	0 Cel		BOTTOM	R-PBGA-B165	1	3.465 V	1.2 mm		15 mm	Not Qualified	33554432 bit	3.135 V	PIPELINED ARCHITECTURE		.03 Amp	17 mm	3.1 ns
MT57W512H36JF-7.5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	240 mA	524288 words	COMMON	1.8	1.5/1.8,1.8	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm	133 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0		15 mm	.5 ns
MT58L256L32PF-5	Micron Technology	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	525 mA	262144 words	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX32	256K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm		13 mm	Not Qualified	8388608 bit	3.135 V		e0	.01 Amp	15 mm	3.1 ns
MT55L2MY18PF-6	Micron Technology	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm		15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e1		17 mm	3.5 ns
MT58L128L36F1F-7.5IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm		13 mm	Not Qualified	4718592 bit	3.135 V		e1		15 mm	7.5 ns
MT55V2MV18FF-11	Micron Technology	ZBT SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		2.5		18	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		2MX18	2M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		2.625 V	1.2 mm		15 mm	Not Qualified	37748736 bit	2.375 V	FLOW-THROUGH ARCHITECTURE	e1		17 mm	8.5 ns
MT54W512H36JF-6	Micron Technology	QDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	380 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm	167 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	.155 Amp	15 mm	.5 ns
MT58L512V18PF-6IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V		e1		15 mm	3.5 ns
MT57W1MH18BF-5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	330 mA	1048576 words	COMMON	1.8	1.5/1.8,1.8	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm	200 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	.17 Amp	15 mm	.45 ns
MT57V1MH36AF-5	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		2.6 V	1.2 mm		15 mm	Not Qualified	37748736 bit	2.4 V	PIPELINED ARCHITECTURE	e1		17 mm	2.4 ns
MT54W2MH8JF-7.5	Micron Technology	QDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	235 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	8	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX8	2M	1.7 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm	133 MHz	13 mm	Not Qualified	16777216 bit	1.7 V	PIPELINED ARCHITECTURE	e0	.125 Amp	15 mm	.5 ns
MT57W4MH9JF-6	Micron Technology	DDR SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		9	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		4MX9	4M		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		1.9 V	1.2 mm		15 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1		17 mm	.5 ns
MT55L256L36PF-7.5IT	Micron Technology	ZBT SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		256KX36	256K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V		e1		15 mm	4.2 ns
MT58L128L32F1F-10IT	Micron Technology	STANDARD SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX32	128K	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B165		3.6 V	1.2 mm		13 mm	Not Qualified	4194304 bit	3.135 V		e0	.01 Amp	15 mm	10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.