TFBGA SRAM 1,321

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

M69AW048BL70ZB8T

STMicroelectronics

STANDARD SRAM

COMMERCIAL EXTENDED

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

30 mA

2097152 words

COMMON

3

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

2MX16

2M

-30 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

3.3 V

1.2 mm

6 mm

Not Qualified

33554432 bit

2.7 V

e0

.00001 Amp

8 mm

70 ns

M68AW256D70ZB6

STMicroelectronics

APPLICATION SPECIFIC SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

15 mA

262144 words

COMMON

3

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

7 mm

Not Qualified

4194304 bit

2.7 V

e1

.00002 Amp

8 mm

70 ns

M68AW256D70ZB6T

STMicroelectronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

15 mA

262144 words

COMMON

3

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

7 mm

Not Qualified

4194304 bit

2.7 V

e1

.00002 Amp

8 mm

70 ns

M69AR048AL85ZB8

STMicroelectronics

STANDARD SRAM

OTHER

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

25 mA

2097152 words

COMMON

1.8

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

2MX16

2M

-30 Cel

BOTTOM

R-PBGA-B48

1.95 V

1.2 mm

6 mm

Not Qualified

33554432 bit

1.65 V

.0001 Amp

8 mm

85 ns

M68AR512DN55ZB6T

STMicroelectronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

512KX16

512K

-40 Cel

BOTTOM

R-PBGA-B48

1.95 V

1.2 mm

6 mm

Not Qualified

8388608 bit

1.65 V

7 mm

55 ns

M68AR512DL55ZB6

STMicroelectronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

512KX16

512K

-40 Cel

BOTTOM

R-PBGA-B48

1.95 V

1.2 mm

8 mm

Not Qualified

8388608 bit

1.65 V

10 mm

55 ns

M68AW256ML55ZH6E

STMicroelectronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

26 mA

262144 words

COMMON

3

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

2.7 V

e1

.000009 Amp

8 mm

55 ns

M68AR512DL70ZB6T

STMicroelectronics

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

12 mA

524288 words

COMMON

1.8

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

512KX16

512K

1 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B48

1.95 V

1.2 mm

8 mm

Not Qualified

8388608 bit

1.65 V

e0

.000008 Amp

10 mm

70 ns

M68AR512DN70ZB1

STMicroelectronics

STANDARD SRAM

COMMERCIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

70 Cel

512KX16

512K

0 Cel

BOTTOM

R-PBGA-B48

1.95 V

1.2 mm

6 mm

Not Qualified

8388608 bit

1.65 V

7 mm

70 ns

STK14EC8-BF45I

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

512KX8

512K

-40 Cel

NICKEL PALLADIUM GOLD

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

2.7 V

e4

10 mm

45 ns

CY7C1041G30-10BAJXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

125 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

4194304 bit

2.2 V

e1

260

8 mm

10 ns

CY14U256LA-BA35XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

60 mA

32768 words

COMMON

3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

32KX8

32K

2.7 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

262144 bit

2.7 V

e1

260

YES

.008 Amp

10 mm

35 ns

CY14B104LA-BA20XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

524288 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

512KX8

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

2.7 V

e1

20

260

.005 Amp

10 mm

20 ns

CY7C10212CV33-12BAXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

65536 words

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

125 Cel

64KX16

64K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.63 V

1.2 mm

7 mm

1048576 bit

2.97 V

e1

30

260

8.5 mm

12 ns

CY7C1041G30-10BAJXET

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

125 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

4194304 bit

2.2 V

e1

260

8 mm

10 ns

CY14B104LA-BA20XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

524288 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

512KX8

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

2.7 V

e1

20

260

.005 Amp

10 mm

20 ns

CY62157G18-55BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

22 mA

524288 words

COMMON

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

512KX16

512K

1.8 V

-40 Cel

BOTTOM

R-PBGA-B48

2.2 V

1 mm

6 mm

8388608 bit

1.65 V

YES

.000008 Amp

8 mm

55 ns

CY14V256LA-BA35XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

60 mA

32768 words

3.3

1.8,3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

32KX8

32K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

262144 bit

3 V

e1

30

260

.008 Amp

10 mm

35 ns

CY14B108L-BA20XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

75 mA

1048576 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

1MX8

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.7 V

e1

260

.01 Amp

10 mm

20 ns

CY14V101LA-BA25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

3.3

1.8,3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

128KX8

128K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

1048576 bit

3 V

e1

30

260

.008 Amp

10 mm

25 ns

STK14EC8-BF25

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

70 Cel

512KX8

512K

0 Cel

NICKEL PALLADIUM GOLD

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

2.7 V

e4

10 mm

25 ns

CY62157G30-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

512KX16

512K

3 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

8388608 bit

2.2 V

e1

YES

.0000065 Amp

8 mm

45 ns

CY14V256LA-BA35XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

60 mA

32768 words

3.3

1.8,3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

32KX8

32K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

262144 bit

3 V

e1

30

260

.008 Amp

10 mm

35 ns

CY14B101NA-BA25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

65536 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

64KX16

64K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.7 V

1.2 mm

6 mm

Not Qualified

1048576 bit

3.6 V

e1

10 mm

25 ns

CY14B104NA-BA45XET

Infineon Technologies

NON-VOLATILE SRAM

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

125 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

4194304 bit

3 V

e1

20

260

10 mm

45 ns

CY62177G30-55BKXIT

Infineon Technologies

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

45 mA

2097152 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

2MX16

2M

2.2 V

-40 Cel

BOTTOM

1

R-PBGA-B48

3.6 V

1.2 mm

6 mm

33554432 bit

2.2 V

YES

.000019 Amp

8 mm

55 ns

CY14B116N-BA25XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

60

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B60

3

3.6 V

1.2 mm

10 mm

16777216 bit

2.7 V

e1

260

18 mm

25 ns

CY7C1021CV33-12BAXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

ASYNCHRONOUS

90 mA

65536 words

COMMON

3.3

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

125 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B48

3

3.63 V

1.2 mm

7 mm

Not Qualified

1048576 bit

2.97 V

e1

20

260

.01 Amp

7 mm

12 ns

CY7C1011G30-10BAJXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

125 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

4194304 bit

2.2 V

e1

260

8 mm

10 ns

CY14B101LA-BA25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

128KX8

128K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.7 V

1.2 mm

6 mm

Not Qualified

1048576 bit

3.6 V

e1

30

260

.005 Amp

10 mm

25 ns

CY62177G30-55BAXIT

Infineon Technologies

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

45 mA

2097152 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

2MX16

2M

2.2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

8 mm

33554432 bit

2.2 V

e1

YES

.000019 Amp

9.5 mm

55 ns

CY14B101NA-BA20XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

65536 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

64KX16

64K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

2.7 V

1.2 mm

6 mm

Not Qualified

1048576 bit

3.6 V

e1

10 mm

20 ns

CY14B101LA-BA25XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

128KX8

128K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.7 V

1.2 mm

6 mm

Not Qualified

1048576 bit

3.6 V

e1

30

260

.005 Amp

10 mm

25 ns

CY62157GE30-45BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

512KX16

512K

3 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

8388608 bit

2.2 V

e1

YES

.0000065 Amp

8 mm

45 ns

CY14B108N-BA20XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

75 mA

524288 words

3

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

512KX16

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.7 V

e1

30

260

.01 Amp

10 mm

20 ns

CY14B101LA-BA45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

52 mA

131072 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

128KX8

128K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

1048576 bit

2.7 V

e1

30

260

.005 Amp

10 mm

45 ns

CY14B108N-BA20XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

75 mA

524288 words

3

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

512KX16

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.7 V

e1

30

260

.01 Amp

10 mm

20 ns

CY14V104LA-BA25XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

524288 words

COMMON

3.3

1.8,3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

3 V

e1

30

260

YES

.008 Amp

10 mm

25 ns

CY14B101LA-BA45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

52 mA

131072 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

128KX8

128K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

1048576 bit

2.7 V

e1

30

260

.005 Amp

10 mm

45 ns

STK14EC8-BF25I

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

512KX8

512K

-40 Cel

NICKEL PALLADIUM GOLD

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

2.7 V

e4

10 mm

25 ns

CY14B101NA-BA25XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

65536 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

64KX16

64K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.7 V

1.2 mm

6 mm

Not Qualified

1048576 bit

3.6 V

e1

30

260

10 mm

25 ns

CY14B101NA-BA20XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

65536 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.75 mm

85 Cel

64KX16

64K

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B48

3

2.7 V

1.2 mm

6 mm

Not Qualified

1048576 bit

3.6 V

e1

30

260

10 mm

20 ns

CY62177G30-55BAXI

Infineon Technologies

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

45 mA

2097152 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

2MX16

2M

2.2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

8 mm

33554432 bit

2.2 V

e1

YES

.000019 Amp

9.5 mm

55 ns

CY14B108L-BA45XI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

57 mA

1048576 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

1MX8

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.7 V

e1

20

260

.01 Amp

10 mm

45 ns

CY14B108N-BA45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

57 mA

524288 words

3

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

512KX16

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

8388608 bit

2.7 V

e1

20

260

.01 Amp

10 mm

45 ns

CY7C1079DV33-12B2XI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

250 mA

4194304 words

COMMON

3.3

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

4MX8

4M

2 V

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1.2 mm

8 mm

Not Qualified

33554432 bit

3 V

.05 Amp

9.5 mm

12 ns

CY14B104NA-BA45XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

52 mA

262144 words

3

3/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

2.7 V

e1

20

260

.005 Amp

10 mm

45 ns

CY14B104LA-BA25XIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

70 mA

524288 words

3

3/3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

512KX8

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

6 mm

Not Qualified

4194304 bit

2.7 V

e1

20

260

.005 Amp

10 mm

25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.