Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
YES |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
.000025 Amp |
20.95 mm |
150 ns |
|||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
3 V |
0 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
18.41 mm |
12 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
3 V |
0 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
18.41 mm |
15 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e0 |
.001 Amp |
18.41 mm |
10 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
180 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
.01 Amp |
18.41 mm |
8 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
524288 words |
COMMON |
5 |
3.3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
16 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-G54 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
VDD 3.3V TO 5.5V ; ACCESS TIME=150NS |
YES |
.000035 Amp |
22.22 mm |
85 ns |
||||||||||||||
Toshiba |
CACHE SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
18.41 mm |
10 ns |
||||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
262144 words |
COMMON |
5 |
3/5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=70NS |
.000003 Amp |
18.41 mm |
100 ns |
|||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G54 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.000003 Amp |
22.22 mm |
55 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
e0 |
.002 Amp |
13.34 mm |
12 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
200 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
.01 Amp |
18.41 mm |
15 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
1048576 words |
CONFIGURABLE |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
1 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX4 |
1M |
3 V |
0 Cel |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
CAN ALSO BE CONFIGURED AS 1M X 4 |
.01 Amp |
20.95 mm |
12 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.0001 Amp |
20.95 mm |
70 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
262144 words |
COMMON |
5 |
3/5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G54 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=70NS |
.000003 Amp |
22.22 mm |
100 ns |
|||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
262144 words |
COMMON |
5 |
3/5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G54 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
CAN ALSO OPERATE AT 3.3V |
.00008 Amp |
22.22 mm |
85 ns |
|||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.0001 Amp |
20.95 mm |
100 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
180 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
3 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
.01 Amp |
18.41 mm |
12 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
YES |
.00005 Amp |
20.95 mm |
70 ns |
||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
YES |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2.7 V |
0 Cel |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
YES |
.0001 Amp |
20.95 mm |
70 ns |
|||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
524288 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=55NS |
.000003 Amp |
20.95 mm |
85 ns |
|||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
262144 words |
COMMON |
5 |
3/5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=55NS |
.000003 Amp |
18.41 mm |
85 ns |
|||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
128KX16 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
2097152 bit |
2.7 V |
e0 |
18.41 mm |
85 ns |
||||||||||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
20.95 mm |
70 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G54 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=55NS |
.000003 Amp |
22.22 mm |
85 ns |
|||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
CE/AUTO/SELF REFRESH |
e0 |
YES |
20.95 mm |
80 ns |
|||||||||||||||||||||
Toshiba |
CACHE SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.001 Amp |
18.41 mm |
15 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.00005 Amp |
20.95 mm |
70 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
150 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
.004 Amp |
18.41 mm |
12 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
16 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
DUAL |
1 |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
YES |
.002 Amp |
18.41 mm |
15 ns |
|||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
524288 words |
COMMON |
5 |
3.3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
VDD 3.3V TO 5.5V ; ACCESS TIME=150NS |
e0 |
YES |
.00003 Amp |
20.95 mm |
85 ns |
|||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
YES |
.00003 Amp |
20.95 mm |
70 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
3 V |
0 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
.004 Amp |
18.41 mm |
10 ns |
||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.000025 Amp |
20.95 mm |
100 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
190 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3 V |
.002 Amp |
18.41 mm |
12 ns |
||||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
.004 Amp |
18.41 mm |
8 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
524288 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.000005 Amp |
20.95 mm |
100 ns |
||||||||||||||||
Toshiba |
PSEUDO STATIC RAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
524288 words |
YES |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2.7 V |
0 Cel |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
YES |
.0001 Amp |
20.95 mm |
80 ns |
|||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G54 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
22.22 mm |
85 ns |
|||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
YES |
.00005 Amp |
20.95 mm |
85 ns |
||||||||||||||
Toshiba |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
1048576 bit |
3 V |
LG-MAX |
e0 |
13.34 mm |
15 ns |
|||||||||||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
190 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
16 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
DUAL |
1 |
R-PDSO-G44 |
3.465 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3.135 V |
YES |
.002 Amp |
18.41 mm |
12 ns |
|||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.000003 Amp |
20.95 mm |
55 ns |
||||||||||||||||
Toshiba |
CACHE SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
140 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
3 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
.004 Amp |
18.41 mm |
12 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
2 V |
0 Cel |
DUAL |
R-PDSO-G54 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
22.22 mm |
100 ns |
|||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
16 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G54 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
YES |
.0001 Amp |
22.22 mm |
100 ns |
|||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
.000003 Amp |
20.95 mm |
70 ns |
||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
524288 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
.000003 Amp |
20.95 mm |
70 ns |
||||||||||||||||||
|
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
524288 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=70NS |
NOT SPECIFIED |
NOT SPECIFIED |
.000003 Amp |
20.95 mm |
100 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.