TSSOP SRAM 1,185

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K6T0908U2B-YF85T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	65536 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	524288 bit		e0					85 ns
K6T2008V2A-TF100	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			256KX8	256K		-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	3 V					18.4 mm	100 ns
K6X0808T1D-YF85	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0					85 ns
K6T2008U2M-TF850	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			256KX8	256K		-40 Cel		DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.7 V					18.4 mm	85 ns
K6F1008U2A-YI10T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0			.000001 Amp		100 ns
K6T1008V2E-YB10T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0					100 ns
K6T2008V2M-TF850	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			256KX8	256K		-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	3 V					18.4 mm	85 ns
K6T0808V1D-TF70T	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0					70 ns
K6X4008T1F-LB85T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	MATTE TIN	DUAL	R-PDSO-G32	1				Not Qualified	4194304 bit		e3			.00001 Amp		85 ns
K6T2008V2A-TF850	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			256KX8	256K		-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	3 V					18.4 mm	85 ns
K6T0808U1D-RD70T	Samsung	STANDARD SRAM	OTHER	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0					70 ns
K6L1008V2C-TF10T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0					100 ns
K6T1008V2E-YF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0					70 ns
K6T1008C2E-TF55T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit					.00001 Amp		55 ns
K6L1008V2C-YF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0					70 ns
K6E0808C1C-TC20T	Samsung	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0			.002 Amp		20 ns
KM62256DLRGI-10	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G28	3				Not Qualified	262144 bit		e0			.00003 Amp		100 ns
K6E0808C1E-TC12T	Samsung	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0			.002 Amp		12 ns
K6L0908V2A-YF100	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			64KX8	64K		-40 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	524288 bit	3 V					11.8 mm	100 ns
K6L0908U2A-YB10T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	64KX8	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	524288 bit		e0					100 ns
K6F4008U1C-YF700	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			512KX8	512K		-40 Cel		DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V					11.8 mm	70 ns
K6X1008T2D-PB85T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit					.000006 Amp		85 ns
K6L0908U2A-TD100	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			64KX8	64K		-25 Cel		DUAL	R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	524288 bit	2.7 V					18.4 mm	100 ns
K6F4008V1C-YF55T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	4194304 bit		e0			.000003 Amp		55 ns
K6T0808V1D-TD70T	Samsung	STANDARD SRAM	OTHER	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0					70 ns
K6T0808C1D-RF70T	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0					70 ns
K6X1008C2D-PQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit					.000025 Amp		70 ns
K6L0908V2A-TD70T	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	524288 bit		e0					70 ns
K6L1008U2C-YD10T	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0					100 ns
K6T2008V2M-YB850	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel			256KX8	256K		0 Cel		DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	3 V					11.8 mm	85 ns
K6L1008U2C-RF85T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0					85 ns
K6T1008C2E-RF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp		70 ns
KM62256CLRGE-LU	Samsung	STANDARD SRAM	OTHER	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0			.00002 Amp		120 ns
K6T4008U1C-YF10T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	4194304 bit		e0					100 ns
K6X4008T1F-YQ85T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	125 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	R-PDSO-G32	1				Not Qualified	4194304 bit					.00003 Amp		85 ns
K6T4008U1C-TF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	4194304 bit		e0					70 ns
K6X1008T2D-PQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit					.000025 Amp		70 ns
K6L1008U2C-YD85T	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0					85 ns
K6X1008T2D-TB55T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit					.000006 Amp		55 ns
K6T2008V2A-YF85T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	2097152 bit		e0					85 ns
K6X4008T1F-LF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G32	1				Not Qualified	4194304 bit		e3			.00001 Amp		55 ns
K6L1008V2C-TD10T	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0					100 ns
K6T1008C2E-RF55T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit					.00001 Amp		55 ns
K6X0808C1D-LF70	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G28	1				Not Qualified	262144 bit		e3			.00001 Amp		70 ns
K6X4008T1F-LF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G32	1				Not Qualified	4194304 bit		e3			.00001 Amp		70 ns
K6T0808U1D-TD10T	Samsung	STANDARD SRAM	OTHER	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0					100 ns
K6T4008U1C-TF85T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	4194304 bit		e0					85 ns
K6X1008C2D-PF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32	3				Not Qualified	1048576 bit				260	.00001 Amp		55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.