TSSOP SRAM 1,185

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6T2008U2M-TB100	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel			256KX8	256K		0 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.7 V					18.4 mm	100 ns
K6T4008U1C-YF85T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	4194304 bit			e0				85 ns
K6X4008T1F-LQ85	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	125 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	1				Not Qualified	4194304 bit			e3		.00003 Amp		85 ns
KM62256CLRG-LU	Samsung	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0		.00001 Amp		100 ns
K6T0808C1D-TL70T	Samsung	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0				70 ns
K6X1008C2D-PF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32					Not Qualified	1048576 bit					.00001 Amp		70 ns
K6T0908U2B-YF850	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			64KX8	64K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	524288 bit	3 V					11.8 mm	85 ns
K6T2008U2A-YF700	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			256KX8	256K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.7 V					11.8 mm	70 ns
K6X4008T1F-YB70T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-G32	1				Not Qualified	4194304 bit					.00001 Amp		70 ns
K6T4008U1C-TB70T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	4194304 bit			e0				70 ns
K6T2008U2A-TB70T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	256KX8	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	2097152 bit			e0				70 ns
K6T1008V2C-YF100	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	3 V					11.8 mm	100 ns
K6T0808U1D-RB85T	Samsung	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0				85 ns
K6T1008U2E-YF100	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V					11.8 mm	100 ns
K6T0808U1D-RF70T	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0				70 ns
K6L0908U2A-YB85T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	64KX8	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	524288 bit			e0				85 ns
K6L0908V2A-TF10T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	64KX8	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	524288 bit			e0				100 ns
K6X4008T1F-YB55	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32					Not Qualified	4194304 bit			e0		.00001 Amp		55 ns
K6T2008V2A-YF700	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			256KX8	256K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	3 V					11.8 mm	70 ns
K6T4008U1C-YF70T	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	4194304 bit			e0				70 ns
K6T0808U1D-RF10T	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0				100 ns
K6E0808V1C-TC15T	Samsung	STANDARD SRAM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0		.0001 Amp		15 ns
K6L1008V2C-NB70T	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	1048576 bit			e0				70 ns
KM68V4000CLTGI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8.4 mm	Not Qualified	4194304 bit	3 V	BATTERY BACKUP	e0		.00002 Amp	11.8 mm	70 ns
KM68U1000BLT-7	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3				Not Qualified	1048576 bit			e0		.00004 Amp		70 ns
KM68FS1000RI-10	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON		2.3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3				Not Qualified	1048576 bit			e0		.000001 Amp		100 ns
KM68U1000CLTI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3				Not Qualified	1048576 bit			e0		.00002 Amp		70 ns
KM68V1000CLRE-8L	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL		R-PDSO-G32	3				Not Qualified	1048576 bit			e0		.00002 Amp		85 ns
KM68FS1000RGI-12	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON		2.3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	1048576 bit			e0		.000001 Amp		120 ns
KM68FS1000TI-15H	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	COMMON		2.3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	1048576 bit			e0		.000005 Amp		150 ns
KM681000BLRI-10L	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.00002 Amp	20 mm	100 ns
KM68U1000BLR-8L	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	1048576 bit			e0		.00001 Amp		85 ns
KM68U2000LTGI-10L0	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel			256KX8	256K		-40 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.7 V					11.8 mm	100 ns
KM68FS1000R-12H	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON		2.3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	1 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	1048576 bit			e0		.000005 Amp		120 ns
KM68FU1000RI-7	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	1048576 bit			e0		.000001 Amp		70 ns
KM68FS1000TG-12H	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON		2.3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	1 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	1048576 bit			e0		.000005 Amp		120 ns
KM68U1000BLR-7	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3				Not Qualified	1048576 bit			e0		.00004 Amp		70 ns
KM68V4000CLTG-7L	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8.4 mm	Not Qualified	4194304 bit	3 V		e0		.000015 Amp	11.8 mm	70 ns
KM681000BLT-5	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.00005 Amp	20 mm	55 ns
KM68U1000BLR-8	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32					Not Qualified	1048576 bit			e0		.000025 Amp		85 ns
KM68V257ETGI-15	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28	3				Not Qualified	262144 bit			e0		.002 Amp		15 ns
KM68U1000CLRGI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel	YES	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3				Not Qualified	1048576 bit			e0		.00002 Amp		70 ns
KM68FS2000T-1200	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel			256KX8	256K		0 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.3 V					18.4 mm	120 ns
KM68257ELTI-15	Samsung	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0				15 ns
KM681000BLR-5	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.00005 Amp	20 mm	55 ns
KM68FS1000TG-150	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel			128KX8	128K		0 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.3 V					11.8 mm	150 ns
KM681000BLTE-10L	Samsung	STANDARD SRAM	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.000025 Amp	20 mm	100 ns
KM68U2000LTG-8L0	Samsung	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel			256KX8	256K		0 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.7 V					11.8 mm	85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.