VFBGA SRAM 1,783

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K6F4008S2F-EF850	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX8	512K		-40 Cel		BOTTOM	R-PBGA-B36		2.7 V	1 mm	6 mm	Not Qualified	4194304 bit	2.3 V					7 mm	85 ns
K6T4008U2C-ZF85	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B36		3.3 V	.94 mm	6.1 mm	Not Qualified	4194304 bit	2.7 V	e0				8.9 mm	85 ns
KM616U4010CLZI-10L	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.94 mm	6.1 mm	Not Qualified	4194304 bit	2.7 V	e0				8.9 mm	100 ns
K6F3216R6M-EF70	Samsung	STANDARD SRAM	INDUSTRIAL	55	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA55,8X12,30	SRAMs	.75 mm	85 Cel	3-STATE	2MX16	2M	1 V	-40 Cel		BOTTOM	R-PBGA-B55	1	1.95 V	1 mm	7.5 mm	Not Qualified	33554432 bit	1.65 V				.00002 Amp	12 mm	70 ns
K6F1016R4C-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM	R-PBGA-B48		2.2 V	1 mm	6 mm	Not Qualified	1048576 bit	1.65 V					7 mm	70 ns
K6F8016U6D-XF55T	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	28 mA	524288 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	8388608 bit	2.7 V				.000006 Amp	7 mm	55 ns
K6F4008U2F-EF55	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B36		3.3 V	1 mm	6 mm	Not Qualified	4194304 bit	2.7 V	e0			.000003 Amp	7 mm	55 ns
K6F4016U6E-EF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	22 mA	262144 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	4194304 bit	2.7 V	e0			.000003 Amp	7 mm	70 ns
K6F1008R2M-ZI300	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM	R-PBGA-B48		2.7 V	.81 mm	6 mm	Not Qualified	1048576 bit	1.8 V					8 mm	300 ns
K6F4016R4M-ZI10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48		2.2 V	.94 mm	8.2 mm	Not Qualified	4194304 bit	1.7 V					8.7 mm	100 ns
KM616FS2000Z-15	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON		2.3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	128KX16	128K	1.5 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.81 mm	6 mm	Not Qualified	2097152 bit	2.3 V	e0			.000005 Amp	8 mm	150 ns
K6F4016R4G-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	4194304 bit	1.65 V					7 mm	70 ns
K6F4016U4F-EF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	27 mA	262144 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	4194304 bit	2.7 V	e0			.000003 Amp	7 mm	55 ns
K6F8016S6B-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX16	512K		-40 Cel		BOTTOM	R-PBGA-B48		2.7 V	1 mm	6 mm	Not Qualified	8388608 bit	2.3 V					7 mm	70 ns
K1C6416B8D-I0000	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V					8 mm	70 ns
K6F8016U6C-FF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX16	512K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	8388608 bit	2.7 V					7 mm	70 ns
K6F1616U6B-EF70	Samsung	CACHE SRAM	INDUSTRIAL	48	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM	S-PBGA-B48	1	3.3 V	1 mm	7 mm	Not Qualified	16777216 bit	2.7 V				.000015 Amp	7 mm	70 ns
K6F4016R4M-ZI85	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48		2.2 V	.94 mm	8.2 mm	Not Qualified	4194304 bit	1.7 V					8.7 mm	85 ns
K1S161611A-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		2.9		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.1 V	1 mm	6 mm	Not Qualified	16777216 bit	2.7 V	e0				7 mm	70 ns
K6F8016T6C-FF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	22 mA	524288 words	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		BOTTOM	R-PBGA-B48	1	3.6 V	1 mm	6 mm	Not Qualified	8388608 bit	2.7 V					7 mm	70 ns
KM616FU2010AZI-10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX8	256K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.94 mm	6 mm	Not Qualified	2097152 bit	2.7 V	e0				8 mm	100 ns
K6F1016U4C-EF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	1048576 bit	2.7 V	e0			.000005 Amp	7 mm	70 ns
K1S1616BCA-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B48		2.1 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V					8 mm	70 ns
K1S64161CC-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	COMMON	2.9	2.9	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B48	1	3.1 V	1 mm	6 mm	Not Qualified	67108864 bit	2.7 V				.00018 Amp	8 mm	70 ns
K6F2008R2E-EF850	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX8	256K		-40 Cel		BOTTOM	R-PBGA-B36		2.2 V	1 mm	6 mm	Not Qualified	2097152 bit	1.65 V					7 mm	85 ns
K1S3216BCC-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48	1	2.1 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V				.0001 Amp	8 mm	70 ns
K1S3216BCD-FI85	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.85	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48	1	2 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V				.0001 Amp	8 mm	85 ns
K1S1616BCA-BI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B48		2.1 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V					8 mm	70 ns
K6F1616R6B-EF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	22 mA	1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B48		1.95 V	1 mm	7 mm	Not Qualified	16777216 bit	1.65 V	e0				7 mm	70 ns
K6F4016R4F-EF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48		2.2 V	1 mm	6 mm	Not Qualified	4194304 bit	1.65 V					7 mm	85 ns
K6F4016R6G-EF85	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3	1.95 V	1 mm	6 mm	Not Qualified	4194304 bit	1.65 V	e0			.000003 Amp	7 mm	85 ns
K6R1016C1D-EC12	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	65536 words	COMMON	5	5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		5.5 V	1 mm	6 mm	Not Qualified	1048576 bit	4.5 V	e0			.005 Amp	7 mm	12 ns
K6F4016R6E-EF85T	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3	2.2 V	1 mm	6 mm	Not Qualified	4194304 bit	1.65 V	e0				7 mm	85 ns
K1S3216B1C-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48		2.1 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V					8 mm	70 ns
K1S32161CD-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	2.9	2.9	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48		3.1 V	1 mm	6 mm	Not Qualified	33554432 bit	2.7 V		30	240	.0001 Amp	8 mm	70 ns
K6F8016T6C-FF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	28 mA	524288 words	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		BOTTOM	R-PBGA-B48	1	3.6 V	1 mm	6 mm	Not Qualified	8388608 bit	2.7 V					7 mm	55 ns
K6F3216T6M-EF550	Samsung	STANDARD SRAM	INDUSTRIAL	55	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B55		3.6 V	1 mm	7.5 mm	Not Qualified	33554432 bit	2.7 V					12 mm	55 ns
K6F8016S6A-EF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	2.5	2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		2.7 V	1 mm	7 mm	Not Qualified	8388608 bit	2.3 V	e0			.000006 Amp	9 mm	70 ns
K6F2016V4A-ZI70	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	.94 mm	6 mm	Not Qualified	2097152 bit	3 V					8 mm	70 ns
K1S1616B1A-FI70	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	1	2.1 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V	e0				7 mm	70 ns
K6F8016R6A-EF7000	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	3	2.2 V	1 mm	7 mm	Not Qualified	8388608 bit	1.65 V	e1				9 mm	70 ns
K6F8016U6A-EF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	1 mm	7 mm	Not Qualified	8388608 bit	2.7 V	e0			.000006 Amp	9 mm	55 ns
K6F1616U6M-EF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	9 mm	Not Qualified	16777216 bit	2.7 V					12 mm	55 ns
K6R1016V1D-EI10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	75 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	6 mm	Not Qualified	1048576 bit	3 V	e0			.005 Amp	7 mm	10 ns
KM616FS1000ZI-15	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON		2.3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.81 mm	6 mm	Not Qualified	1048576 bit	2.3 V	e0			.000005 Amp	8 mm	150 ns
K6F4016R6F-EF85	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		2.2 V	1 mm	6 mm	Not Qualified	4194304 bit	1.65 V	e0				7 mm	85 ns
K6F8016U6C-FF550	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX16	512K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	8388608 bit	2.7 V					7 mm	55 ns
K6F1016U4C-EF550	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	1048576 bit	2.7 V					7 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.