VFBGA SRAM 1,783

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K6R4016C1D-EC10	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	5	5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		5.5 V	1 mm	7 mm	Not Qualified	4194304 bit	4.5 V		e0			.005 Amp	9 mm	10 ns
K6R4016V1D-EL08	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	80 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	7 mm	Not Qualified	4194304 bit	3 V		e0			.005 Amp	9 mm	8 ns
K6R4016V1D-EL100	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm	7 mm	Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.005 Amp	9 mm	10 ns
KM68FS1000ZI-15	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	2.5	2.3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX8	128K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.81 mm	6 mm	Not Qualified	1048576 bit	2.3 V	CAN BE USED AS 3 VOLTS NOMINAL SUPPLY	e0			.000005 Amp	8 mm	150 ns
KM68FR1000ZI-30	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	2	1.8/2.7	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX8	128K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		2.7 V	.81 mm	6 mm	Not Qualified	1048576 bit	1.8 V	CAN BE USED AS 2.5 VOLTS NOMINAL SUPPLY	e0			.000005 Amp	8 mm	300 ns
KM68U4000BLZ-8L	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	70 Cel		512KX8	512K		0 Cel		BOTTOM	R-PBGA-B48		3.3 V	.81 mm	7.2 mm	Not Qualified	4194304 bit	2.7 V						11.65 mm	85 ns
K6R4016C1D-EI100	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48		5.5 V	1 mm	7 mm	Not Qualified	4194304 bit	4.5 V			30	240		9 mm	10 ns
K6R4016V1D-EP100	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm	7 mm	Not Qualified	4194304 bit	3 V			30	240	.0014 Amp	9 mm	10 ns
KM68FR2000Z-30	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	2	1.8/2.7	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX8	256K	1.5 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		2.7 V	.81 mm	6.2 mm	Not Qualified	2097152 bit	1.8 V	CAN BE USED AS 2.5 VOLTS NOMINAL SUPPLY	e0			.00001 Amp	13.75 mm	300 ns
KM68U4100CLZI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B36		3.3 V	.94 mm	6.1 mm	Not Qualified	4194304 bit	2.7 V		e0			.00002 Amp	8.9 mm	70 ns
K6R4016V1D-EC100	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm	7 mm	Not Qualified	4194304 bit	3 V			30	240	.005 Amp	9 mm	10 ns
KM68FS2000Z-15	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	2.5	2.3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX8	256K	1.5 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.81 mm	6.2 mm	Not Qualified	2097152 bit	2.3 V	CAN BE USED AS 3 VOLTS NOMINAL SUPPLY	e0			.00001 Amp	13.75 mm	150 ns
K6R4016V1D-EI080	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel		BOTTOM	R-PBGA-B48	1	3.6 V	1 mm	7 mm	Not Qualified	4194304 bit	3 V					.005 Amp	9 mm	8 ns
KM68U4100CLZI-8L	Samsung	STANDARD SRAM	INDUSTRIAL	36	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B36		3.3 V	.94 mm	6.1 mm	Not Qualified	4194304 bit	2.7 V		e0			.00002 Amp	8.9 mm	85 ns
KM68FR1000ZI-300	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM	R-PBGA-B48		2.7 V	.81 mm	6 mm	Not Qualified	1048576 bit	1.8 V						8 mm	300 ns
KM68FS1000Z-15	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	2.5	2.3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	128KX8	128K	1.5 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.81 mm	6 mm	Not Qualified	1048576 bit	2.3 V	CAN BE USED AS 3 VOLTS NOMINAL SUPPLY	e0			.000005 Amp	8 mm	150 ns
KM68FS1000ZI-150	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	.81 mm	6 mm	Not Qualified	1048576 bit	2.3 V						8 mm	150 ns
KM68FR2000ZI-30	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	2	1.8/2.7	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX8	256K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		2.7 V	.81 mm	6.2 mm	Not Qualified	2097152 bit	1.8 V	CAN BE USED AS 2.5 VOLTS NOMINAL SUPPLY	e0			.00001 Amp	13.75 mm	300 ns
K6R4016V1D-EP08	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	7 mm	Not Qualified	4194304 bit	3 V		e0			.0014 Amp	9 mm	8 ns
KM68V4000BLZI-10L	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX8	512K		-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	.81 mm	7.2 mm	Not Qualified	4194304 bit	3 V						11.65 mm	100 ns
K6R4016V1D-EI08	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.6 V	1 mm	7 mm	Not Qualified	4194304 bit	3 V		e0			.005 Amp	9 mm	8 ns
KM68U4000BLZ-10L	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.81 mm	7.2 mm	Not Qualified	4194304 bit	2.7 V		e0			.000015 Amp	11.65 mm	100 ns
K6R4016V1D-EI10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.6 V	1 mm	7 mm	Not Qualified	4194304 bit	3 V		e0			.005 Amp	9 mm	10 ns
K6R4016C1D-EC100	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	70 Cel		256KX16	256K		0 Cel		BOTTOM	R-PBGA-B48		5.5 V	1 mm	7 mm	Not Qualified	4194304 bit	4.5 V			30	240		9 mm	10 ns
KM68FR1000Z-30	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	2	1.8/2.7	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	128KX8	128K	1.5 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		2.7 V	.81 mm	6 mm	Not Qualified	1048576 bit	1.8 V	CAN BE USED AS 2.5 VOLTS NOMINAL SUPPLY	e0			.000005 Amp	8 mm	300 ns
K6R4016C1D-EC12	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	70 Cel		256KX16	256K		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		5.5 V	1 mm	7 mm	Not Qualified	4194304 bit	4.5 V		e0				9 mm	12 ns
KM68V4000BLZ-10L	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	70 Cel		512KX8	512K		0 Cel		BOTTOM	R-PBGA-B48		3.6 V	.81 mm	7.2 mm	Not Qualified	4194304 bit	3 V						11.65 mm	100 ns
KM68FU2000AZI-10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX8	256K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.94 mm	6 mm	Not Qualified	2097152 bit	2.7 V		e0			.000003 Amp	8 mm	100 ns
K6R4016V1D-EI10T	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm	7 mm	Not Qualified	4194304 bit	3 V					.005 Amp	9 mm	10 ns
KM68FS2000ZI-15	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	2.5	2.3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX8	256K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.81 mm	6.2 mm	Not Qualified	2097152 bit	2.3 V	CAN BE USED AS 3 VOLTS NOMINAL SUPPLY	e0			.00001 Amp	13.75 mm	150 ns
MT45W1ML16PAFA-70LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-40 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e0			.00007 Amp	8 mm	70 ns
MT45W2MV16PABA-85IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	85 ns
MT45W2MW16BGB-701LWT	Micron Technology	PSEUDO STATIC RAM		54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm			2MX16	2M				BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V						8 mm	70 ns
MT45W8MW16BGX-7013LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	8388608 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V		e1			.00016 Amp	10 mm	70 ns
MT45W4ML16BFB-851LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e0			.0001 Amp	8 mm	85 ns
MT45W2ML16BFB-708LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	70 ns
MT45W2MV16BBB-708IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1		260	.00011 Amp	8 mm	70 ns
MT45W2ML16BBB-708LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1		260	.00009 Amp	8 mm	70 ns
MT45W2MV16BFB-851LIT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN LEAD SILVER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	85 ns
MT45W4MW16PBA-70WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-30 Cel	Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)	BOTTOM	R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e8	30	260	.00012 Amp	8 mm	70 ns
MT45W2MV16BBB-851WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V		e1		260	.00011 Amp	8 mm	85 ns
MT45W4MW16BKGB-701IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1				8 mm	70 ns
MT45W2MW16BFB-701WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e0			.00011 Amp	8 mm	70 ns
MT45W2MW16BBB-701WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1		260	.00011 Amp	8 mm	70 ns
MT45W4MV16PFA-70WT	Micron Technology	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON	1.8	1.8,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e0			.00012 Amp	8 mm	70 ns
MT45W2ML16BBB-706IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1		260	.00011 Amp	8 mm	70 ns
MT45W4ML16BBB-701LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8,3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE POSSIBLE	e1		260	.0001 Amp	8 mm	70 ns
MT45W4MV16BBB-601WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		4MX16	4M		-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B54		1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V		e1				8 mm	60 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.