Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
6 mm |
4194304 bit |
2.2 V |
8 mm |
45 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
1.8 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
2.2 V |
1 mm |
6 mm |
16777216 bit |
1.65 V |
e1 |
260 |
8 mm |
15 ns |
||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
BOTTOM |
1 |
R-PBGA-B48 |
3.6 V |
1 mm |
6 mm |
4194304 bit |
2.2 V |
YES |
.000013 Amp |
8 mm |
45 ns |
|||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
3 V |
e1 |
260 |
8 mm |
10 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
4194304 bit |
2.2 V |
e1 |
260 |
8 mm |
45 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
260 |
8 mm |
10 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
BALL |
PARALLEL |
ASYNCHRONOUS |
40 mA |
1048576 words |
COMMON |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
8 |
.75 mm |
125 Cel |
3-STATE |
1MX16 |
1M |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
260 |
YES |
.000075 Amp |
8 mm |
55 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
125 Cel |
256KX16 |
256K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
4194304 bit |
2.2 V |
e1 |
260 |
8 mm |
55 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
260 |
8 mm |
45 ns |
||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
MILITARY |
48 |
VFBGA |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
160 mA |
1048576 words |
COMMON |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
125 Cel |
3-STATE |
1MX16 |
1M |
1 V |
-55 Cel |
BOTTOM |
1 |
R-XBGA-B48 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
YES |
.05 Amp |
8 mm |
10 ns |
|||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
3 V |
8 mm |
10 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
30 |
260 |
8 mm |
10 ns |
|||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
6 mm |
4194304 bit |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
45 ns |
||||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
5 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
BOTTOM |
1 |
R-PBGA-B48 |
5.5 V |
1 mm |
6 mm |
4194304 bit |
4.5 V |
YES |
.000013 Amp |
8 mm |
45 ns |
|||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
260 |
8 mm |
45 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
4194304 bit |
2.2 V |
e1 |
260 |
8 mm |
45 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
131072 words |
COMMON |
3 |
2.5/3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
2097152 bit |
2.2 V |
e1 |
20 |
260 |
.000003 Amp |
8 mm |
45 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
260 |
8 mm |
10 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
30 |
260 |
8 mm |
10 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
1.8 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
2.2 V |
1 mm |
6 mm |
4194304 bit |
1.65 V |
e1 |
260 |
YES |
.000013 Amp |
8 mm |
55 ns |
||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
5.5 V |
1 mm |
6 mm |
16777216 bit |
4.5 V |
e1 |
260 |
8 mm |
10 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
18 mA |
131072 words |
COMMON |
3 |
2.5/3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
2097152 bit |
2.2 V |
e1 |
20 |
260 |
.000004 Amp |
8 mm |
45 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
262144 words |
1.8 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
2.2 V |
1 mm |
6 mm |
4194304 bit |
1.65 V |
e1 |
260 |
8 mm |
55 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
30 |
260 |
8 mm |
10 ns |
|||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
30 |
260 |
8 mm |
10 ns |
|||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
4194304 bit |
2.2 V |
e1 |
260 |
8 mm |
45 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
4194304 bit |
2.2 V |
e1 |
260 |
YES |
.000013 Amp |
8 mm |
45 ns |
||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
2097152 words |
COMMON |
3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
2MX8 |
2M |
2.2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
YES |
.000008 Amp |
8 mm |
45 ns |
|||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
2097152 words |
COMMON |
3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
2MX8 |
2M |
2.2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
YES |
.000008 Amp |
8 mm |
45 ns |
|||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
125 Cel |
1MX16 |
1M |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
5.5 V |
1 mm |
6 mm |
16777216 bit |
4.5 V |
8 mm |
55 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
8 |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
5.5 V |
1 mm |
6 mm |
16777216 bit |
4.5 V |
e1 |
260 |
8 mm |
45 ns |
|||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
5.5 V |
1 mm |
6 mm |
16777216 bit |
4.5 V |
e1 |
260 |
8 mm |
10 ns |
||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
36 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
524288 words |
COMMON |
3 |
2.5/3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA36,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
1.5 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B36 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
4194304 bit |
2.2 V |
e0 |
260 |
.000007 Amp |
8 mm |
45 ns |
||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
1.8 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
2.2 V |
1 mm |
6 mm |
16777216 bit |
1.65 V |
e1 |
260 |
8 mm |
15 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
3 |
2.5/3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
4194304 bit |
2.2 V |
e1 |
20 |
260 |
.000007 Amp |
8 mm |
45 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
1.8 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
8 |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
2.2 V |
1 mm |
6 mm |
16777216 bit |
1.65 V |
e1 |
260 |
8 mm |
55 ns |
|||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
125 Cel |
512KX16 |
512K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
8388608 bit |
2.2 V |
e1 |
30 |
260 |
8 mm |
55 ns |
||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
6 mm |
4194304 bit |
2.2 V |
8 mm |
45 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
36 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
18 mA |
262144 words |
COMMON |
3 |
2.5/3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA36,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX8 |
256K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B36 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
2097152 bit |
2.2 V |
e1 |
260 |
.000004 Amp |
8 mm |
45 ns |
|||||||||||||
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
1.8 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
BOTTOM |
1 |
R-PBGA-B48 |
2.2 V |
1 mm |
6 mm |
4194304 bit |
1.65 V |
YES |
.000013 Amp |
8 mm |
55 ns |
|||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
1.8 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
2.2 V |
1 mm |
6 mm |
16777216 bit |
1.65 V |
e1 |
260 |
8 mm |
15 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
5 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
5.5 V |
1 mm |
6 mm |
16777216 bit |
4.5 V |
e1 |
260 |
8 mm |
10 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
90 mA |
131072 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
2097152 bit |
3 V |
e1 |
20 |
260 |
.01 Amp |
8 mm |
10 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
131072 words |
COMMON |
3 |
2.5/3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
2097152 bit |
2.2 V |
e1 |
20 |
260 |
.000003 Amp |
8 mm |
45 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
60 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
1048576 bit |
3 V |
e1 |
20 |
260 |
.003 Amp |
8 mm |
10 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
8 |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
260 |
8 mm |
45 ns |
|||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
260 |
8 mm |
45 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
8388608 bit |
2.2 V |
e1 |
260 |
8 mm |
45 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.