VFBGA SRAM 1,783

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY62146GE30-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

8 mm

45 ns

CY7C1061G18-15BVJXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.2 V

1 mm

6 mm

16777216 bit

1.65 V

e1

260

8 mm

15 ns

CY62147G30-45B2XIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

BOTTOM

1

R-PBGA-B48

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

YES

.000013 Amp

8 mm

45 ns

CY7C1069GN30-10BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

2MX8

2M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

3 V

e1

260

8 mm

10 ns

CY62147GN30-45B2XI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

e1

260

8 mm

45 ns

CY7C1061GE30-10BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

8 mm

10 ns

CY62167G30-55BVXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

PARALLEL

ASYNCHRONOUS

40 mA

1048576 words

COMMON

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

8

.75 mm

125 Cel

3-STATE

1MX16

1M

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

YES

.000075 Amp

8 mm

55 ns

CY62147G30-55BVXET

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

125 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

e1

260

8 mm

55 ns

CY62168GE30-45BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

2MX8

2M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

8 mm

45 ns

CY7C1061G30-10BVXM

Infineon Technologies

STANDARD SRAM

MILITARY

48

VFBGA

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

160 mA

1048576 words

COMMON

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

125 Cel

3-STATE

1MX16

1M

1 V

-55 Cel

BOTTOM

1

R-XBGA-B48

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

YES

.05 Amp

8 mm

10 ns

CY7C1069GN30-10BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

2MX8

2M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

16777216 bit

3 V

8 mm

10 ns

CY7C1061GN30-10BV1XIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

30

260

8 mm

10 ns

CY62146GN30-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

45 ns

CY62147GE-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

BOTTOM

1

R-PBGA-B48

5.5 V

1 mm

6 mm

4194304 bit

4.5 V

YES

.000013 Amp

8 mm

45 ns

CY62168GE30-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

2MX8

2M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

8 mm

45 ns

CY62147G30-45BVXAT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

e1

260

8 mm

45 ns

CY62137EV30LL-45BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

131072 words

COMMON

3

2.5/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

128KX16

128K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

2097152 bit

2.2 V

e1

20

260

.000003 Amp

8 mm

45 ns

CY7C1061GE30-10BVJXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

8 mm

10 ns

CY7C1061GN30-10BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

30

260

8 mm

10 ns

CY62147G18-55BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

2.2 V

1 mm

6 mm

4194304 bit

1.65 V

e1

260

YES

.000013 Amp

8 mm

55 ns

CY7C1061G-10BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

5.5 V

1 mm

6 mm

16777216 bit

4.5 V

e1

260

8 mm

10 ns

CY62137FV30LL-45BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

18 mA

131072 words

COMMON

3

2.5/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

128KX16

128K

1.5 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

2097152 bit

2.2 V

e1

20

260

.000004 Amp

8 mm

45 ns

CY62147GN18-55BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.2 V

1 mm

6 mm

4194304 bit

1.65 V

e1

260

8 mm

55 ns

CY7C1061GN30-10BVJXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

30

260

8 mm

10 ns

CY7C1061GN30-10BVJXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

30

260

8 mm

10 ns

CY62147G30-45BVXA

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

e1

260

8 mm

45 ns

CY62147G30-45B2XI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

e1

260

YES

.000013 Amp

8 mm

45 ns

CY62168GN30-45BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

2097152 words

COMMON

3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

2MX8

2M

2.2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

YES

.000008 Amp

8 mm

45 ns

CY62168GN30-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

2097152 words

COMMON

3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

2MX8

2M

2.2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

YES

.000008 Amp

8 mm

45 ns

CY62167G-55BVXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

125 Cel

1MX16

1M

-40 Cel

BOTTOM

R-PBGA-B48

5.5 V

1 mm

6 mm

16777216 bit

4.5 V

8 mm

55 ns

CY62167G-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

5.5 V

1 mm

6 mm

16777216 bit

4.5 V

e1

260

8 mm

45 ns

CY7C1061GE-10BVJXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

5.5 V

1 mm

6 mm

16777216 bit

4.5 V

e1

260

8 mm

10 ns

CY62148EV30LL-45BVIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

36

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

524288 words

COMMON

3

2.5/3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA36,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

512KX8

512K

1.5 V

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B36

3

3.6 V

1 mm

6 mm

Not Qualified

4194304 bit

2.2 V

e0

260

.000007 Amp

8 mm

45 ns

CY7C1061G18-15BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.2 V

1 mm

6 mm

16777216 bit

1.65 V

e1

260

8 mm

15 ns

CY62146EV30LL-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

3

2.5/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

1.5 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

4194304 bit

2.2 V

e1

20

260

.000007 Amp

8 mm

45 ns

CY62167GE18-55BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.2 V

1 mm

6 mm

16777216 bit

1.65 V

e1

260

8 mm

55 ns

CY62157EV30LL-55BVXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

125 Cel

512KX16

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

8388608 bit

2.2 V

e1

30

260

8 mm

55 ns

CY62147GN30-45BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

262144 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

256KX16

256K

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

4194304 bit

2.2 V

8 mm

45 ns

CY62138FV30LL-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

36

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

18 mA

262144 words

COMMON

3

2.5/3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA36,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX8

256K

1.5 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B36

3

3.6 V

1 mm

6 mm

Not Qualified

2097152 bit

2.2 V

e1

260

.000004 Amp

8 mm

45 ns

CY62147GE18-55BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

COMMON

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

BOTTOM

1

R-PBGA-B48

2.2 V

1 mm

6 mm

4194304 bit

1.65 V

YES

.000013 Amp

8 mm

55 ns

CY7C1061G18-15BVJXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

2.2 V

1 mm

6 mm

16777216 bit

1.65 V

e1

260

8 mm

15 ns

CY7C1061GE-10BV1XI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

5.5 V

1 mm

6 mm

16777216 bit

4.5 V

e1

260

8 mm

10 ns

CY7C1011DV33-10BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

90 mA

131072 words

COMMON

3.3

3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

128KX16

128K

2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

2097152 bit

3 V

e1

20

260

.01 Amp

8 mm

10 ns

CY62136EV30LL-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

20 mA

131072 words

COMMON

3

2.5/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

128KX16

128K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

2097152 bit

2.2 V

e1

20

260

.000003 Amp

8 mm

45 ns

CY7C1019DV33-10BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

3.3

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

1048576 bit

3 V

e1

20

260

.003 Amp

8 mm

10 ns

CY62167GN30-45BVXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

8 mm

45 ns

CY62167GN30-45BVXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

8 mm

45 ns

CY62157H30-45BVXAT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

512KX16

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

8388608 bit

2.2 V

e1

260

8 mm

45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.