VFBGA SRAM 1,783

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
HM62W16256BLBT-7SL	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	70 Cel		256KX16	256K		0 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm	6.94 mm	Not Qualified	4194304 bit	3 V	BATTERY BACKUP					14.4 mm	70 ns
K6F1016U4C-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	1048576 bit	2.7 V						7 mm	70 ns
K6F2016R4G-XF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	2	1.95 V	1 mm	6 mm	Not Qualified	2097152 bit	1.65 V		e1				7 mm	70 ns
K6F2016R4E-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel		BOTTOM	R-PBGA-B48		2.2 V	1 mm	6 mm	Not Qualified	2097152 bit	1.65 V						7 mm	70 ns
K6F1616R6M-EF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B48		2.2 V	1 mm	9 mm	Not Qualified	16777216 bit	1.65 V						12 mm	85 ns
K6F1016R3M-ZF30	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM	R-PBGA-B48		2.7 V	.81 mm	6 mm	Not Qualified	1048576 bit	1.8 V						8 mm	300 ns
K6F3216U6M-EF55	Samsung	STANDARD SRAM	INDUSTRIAL	55	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA55,8X12,30	SRAMs	.75 mm	85 Cel	3-STATE	2MX16	2M	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B55		3.3 V	1 mm	7.5 mm	Not Qualified	33554432 bit	2.7 V		e0			.00002 Amp	12 mm	55 ns
K6T4016U4C-ZF85	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.3 V	.94 mm	6.1 mm	Not Qualified	4194304 bit	2.7 V		e0				8.9 mm	85 ns
K6F4016R6E-EF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	262144 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3	2.2 V	1 mm	6 mm	Not Qualified	4194304 bit	1.65 V		e0				7 mm	70 ns
K1S1616B9B-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V						7 mm	70 ns
K6F1016S3M-ZF15	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	.81 mm	6 mm	Not Qualified	1048576 bit	2.3 V						8 mm	150 ns
K1S3216BCD-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.85	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48		2 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V			30	240	.0001 Amp	8 mm	70 ns
K1S64161CC-BI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words	COMMON	2.9	2.9	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B48		3.1 V	1 mm	6 mm	Not Qualified	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.00018 Amp	8 mm	70 ns
K6F2016U4E-EF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	131072 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	2097152 bit	2.7 V		e0			.000002 Amp	7 mm	70 ns
K6F1016R4C-EF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM	R-PBGA-B48		2.2 V	1 mm	6 mm	Not Qualified	1048576 bit	1.65 V						7 mm	85 ns
K6F8016U6D-XF550	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	28 mA	524288 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	3	3.3 V	1 mm	6 mm	Not Qualified	8388608 bit	2.7 V		e1			.000006 Amp	7 mm	55 ns
K6F2016V4A-ZI10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	.94 mm	6 mm	Not Qualified	2097152 bit	3 V						8 mm	100 ns
K6F1616R6A-EF85	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		2.2 V	1 mm	7.5 mm	Not Qualified	16777216 bit	1.65 V		e0			.000008 Amp	9.5 mm	85 ns
K6F2016U4G-XF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	2	3.3 V	1 mm	6 mm	Not Qualified	2097152 bit	2.7 V		e1				7 mm	70 ns
KM616FU4010ZI-10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	3	3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.94 mm	8.2 mm	Not Qualified	4194304 bit	2.7 V		e0				8.7 mm	100 ns
KM616FR2000ZI-7L	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel		BOTTOM	R-PBGA-B48		2.7 V	.81 mm	6.2 mm	Not Qualified	2097152 bit	1.8 V						13.75 mm	70 ns
K6F4016R4G-EF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	262144 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		BOTTOM	R-PBGA-B48	1	1.95 V	1 mm	6 mm	Not Qualified	4194304 bit	1.65 V					.000003 Amp	7 mm	70 ns
KM616U4010CLZI-7L0	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	.94 mm	6.1 mm	Not Qualified	4194304 bit	2.7 V						8.9 mm	70 ns
K6F4016S6G-EF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48		2.7 V	1 mm	6 mm	Not Qualified	4194304 bit	2.3 V						7 mm	85 ns
K6R1016C1D-EI12	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	5	5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		5.5 V	1 mm	6 mm	Not Qualified	1048576 bit	4.5 V		e0			.005 Amp	7 mm	12 ns
K1S3216BCD-FI70	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	1.85	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48	1	2 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V					.0001 Amp	8 mm	70 ns
KM616FV2010AZI-7	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	.94 mm	6 mm	Not Qualified	2097152 bit	3 V						8 mm	70 ns
K6R1016C1D-EC100	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	70 Cel		64KX16	64K		0 Cel		BOTTOM	R-PBGA-B48		5.5 V	1 mm	6 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		7 mm	10 ns
K6F4016U4E-EF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	27 mA	262144 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	4194304 bit	2.7 V		e0			.000003 Amp	7 mm	55 ns
K6F1616R6M-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B48		2.2 V	1 mm	9 mm	Not Qualified	16777216 bit	1.65 V						12 mm	70 ns
K6F4016U6F-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	4194304 bit	2.7 V						7 mm	70 ns
KM616FS4010ZI-10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	2.5	2.5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		2.6 V	.94 mm	8.2 mm	Not Qualified	4194304 bit	2.4 V		e0				8.7 mm	100 ns
KM616FS2000ZI-10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	.81 mm	6 mm	Not Qualified	2097152 bit	2.3 V						8 mm	100 ns
KM616V4000BLZI-10L	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	.81 mm	7.2 mm	Not Qualified	4194304 bit	3 V	BATTERY BACKUP OPERATION					11.65 mm	100 ns
K6F8016U6B-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX16	512K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	8388608 bit	2.7 V						7 mm	70 ns
KM616FU2010AZI-7	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	131072 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.94 mm	6 mm	Not Qualified	2097152 bit	2.7 V	BATTERY BACKUP OPERATION	e0				8 mm	70 ns
K6H1616U6A-EF25T00	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM	S-PBGA-B48		3.3 V	1 mm	9 mm		16777216 bit	2.7 V						9 mm	25 ns
K6F8008R2B-EF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX8	1M		-40 Cel		BOTTOM	R-PBGA-B48		2.2 V	1 mm	6 mm	Not Qualified	8388608 bit	1.65 V						7 mm	70 ns
K6F2016R4A-ZI700	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		128KX16	128K		-40 Cel		BOTTOM	R-PBGA-B48		2.2 V	.94 mm	6 mm	Not Qualified	2097152 bit	1.7 V						8 mm	70 ns
K6R1016C1D-EI100	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		65536 words		5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		64KX16	64K		-40 Cel		BOTTOM	R-PBGA-B48		5.5 V	1 mm	6 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		7 mm	10 ns
KM616FS1000Z-15	Samsung	STANDARD SRAM	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON		2.3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	1.5 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.3 V	.81 mm	6 mm	Not Qualified	1048576 bit	2.3 V		e0			.000005 Amp	8 mm	150 ns
K6F3216U6M-EF70	Samsung	STANDARD SRAM	INDUSTRIAL	55	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA55,8X12,30	SRAMs	.75 mm	85 Cel	3-STATE	2MX16	2M	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B55		3.3 V	1 mm	7.5 mm	Not Qualified	33554432 bit	2.7 V		e0			.00002 Amp	12 mm	70 ns
K6F4016R6G-EF850	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	4194304 bit	1.65 V						7 mm	85 ns
K1S1616B1A-BI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B48	2	2.1 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e1				7 mm	70 ns
KM616FR4110ZI-10	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		1.7/2.2	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		2.2 V	.94 mm	8.2 mm	Not Qualified	4194304 bit	1.7 V		e0				8.7 mm	100 ns
KM616FR2000Z-30L	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	2	1.8/2.7	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		2.7 V	.81 mm	6.2 mm	Not Qualified	2097152 bit	1.8 V		e0				13.75 mm	300 ns
K6F4016U6E-EF550	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	4194304 bit	2.7 V						7 mm	55 ns
K6F8016U6B-EF550	Samsung	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		512KX16	512K		-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	8388608 bit	2.7 V						7 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.