RECTANGULAR SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC551001BFL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	70 ns
DS1220Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6		SRAMs	2.54 mm	70 Cel			2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.5 V				Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e0				.004 Amp		100 ns
DS1220Y-100+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		8	MICROELECTRONIC ASSEMBLY				2.54 mm	70 Cel			2KX8	2K		0 Cel	MATTE TIN	DUAL		R-XDMA-P24		5.5 V	10.54 mm		17.97 mm	Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e3					33.785 mm	100 ns
DS1220Y-100IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2048 words		5		8	MICROELECTRONIC ASSEMBLY				2.54 mm	85 Cel			2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-XDMA-P24		5.5 V	10.54 mm		17.97 mm	Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e3					33.785 mm	100 ns
DS1220Y-100-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	85 Cel			2KX8	2K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24		5.5 V				Not Qualified	16384 bit	4.5 V		e0				.004 Amp		100 ns
DS1220Y-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6		SRAMs	2.54 mm	85 Cel			2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P24		5.5 V				Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e0				.004 Amp		100 ns
GS74116AGP-8IT	Gsi Technology	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	PURE MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V				260		.02 Amp	18.41 mm	8 ns
IDT71256SA20Y	Integrated Device Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e0	30	225	YES	.015 Amp	17.9324 mm	20 ns
IS61NLP102418B-200TQLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	85 Cel			1MX18	1M		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm		18874368 bit	3.135 V			NOT SPECIFIED	NOT SPECIFIED			20 mm	3 ns
M48Z18-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE			SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	100 ns
CY62128ELL-45ZAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.000004 Amp	11.8 mm	45 ns
CY7C132-55PC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K	4.5 V	0 Cel	TIN LEAD	DUAL	2	R-PDIP-T48		5.5 V	5.334 mm		15.24 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; INTERRUPT FLAG	e0			YES	.015 Amp	61.976 mm	55 ns
CY7C1480V33-200AXC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel		3-STATE	2MX36	2M	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260			20 mm	3 ns
DS1225Y	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	9.398 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP	e0					38.862 mm	200 ns
CY62148G-45SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE				1.27 mm	85 Cel			512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm		4194304 bit	4.5 V				260			20.446 mm	45 ns
SN74LS219AN	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3		SRAMs	2.54 mm	70 Cel		3-STATE	16X4	16		0 Cel		DUAL		R-PDIP-T16						Not Qualified
K6X4008C1F-UF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V						.000012 Amp	20.95 mm	55 ns
KM616V4002BT-12	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES	.01 Amp	18.41 mm	12 ns
KM62256DLG-7	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V		e0				.000015 Amp	18.29 mm	70 ns
STK14CA8-NF45I	Cypress Semiconductor	NON-VOLATILE SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	131072 words		3	3	8	SMALL OUTLINE	SOP32,.4		SRAMs	1.27 mm	85 Cel			128KX8	128K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	3.6 V	2.54 mm		7.505 mm	Not Qualified	1048576 bit	2.7 V		e3	20	260		.003 Amp	20.726 mm	45 ns
CY62148BLL-55ZC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.00002 Amp	20.95 mm	55 ns
CY7C1069G30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel			2MX8	2M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm		16777216 bit	2.2 V			30	260			22.415 mm	10 ns
K6R4008C1D-UI10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	4.5 V	-40 Cel	TIN SILVER COPPER	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e1		260		.005 Amp	18.41 mm	10 ns
KM62256ALG-10	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V	BATTERY BACKUP	e0			YES	.00005 Amp	18.29 mm	100 ns
M48Z128Y-70PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6		SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K		0 Cel	MATTE TIN	DUAL	1	R-PDMA-P32	1	5.5 V	9.52 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEARS OF DATA RETENTION; POWER SUPPLY WRITE PROTECTION; BATTERY BACK-UP	e3		225	YES	.004 Amp	42.8 mm	70 ns
MT45W8MW16BGX-708WTTR	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8388608 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel			8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e1		260			10 mm	70 ns
CY14B104LA-ZS25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words		3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel			512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e4	20	260		.005 Amp	18.415 mm	25 ns
CY62157EV30LL-45BVIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	8388608 bit	2.2 V		e0		260	YES	.000008 Amp	8 mm	45 ns
CY7C1041GN30-10BVJXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm		6 mm		4194304 bit	2.2 V		e1	30	260	YES	.008 Amp	8 mm	10 ns
CY7C1049DV33-10ZSXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel	NO	3-STATE	512KX8	512K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e4	20	260	YES	.01 Amp	18.415 mm	10 ns
CY7C1051H30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	524288 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel		3-STATE	512KX16	512K	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		8388608 bit	2.2 V		e4			YES	.03 Amp	18.415 mm	10 ns
CY7C1061G18-15BV1XI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel			1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.2 V	1 mm		6 mm		16777216 bit	1.65 V		e1		260			8 mm	15 ns
CY7C1441KV33-133BZM	Infineon Technologies	CACHE SRAM	MILITARY	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, LOW PROFILE				1 mm	125 Cel			1MX36	1M		-55 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		15 mm		37748736 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	260			17 mm	6.5 ns
CY7C1460KV33-250AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	85 Cel			1MX36	1M		-40 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e4		260			20 mm
K6R4016V1C-TI10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.0007 Amp	18.41 mm	10 ns
K6T1008C2E-DB70	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDIP-T32	1	5.5 V	5.08 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V							41.91 mm	70 ns
K6X4008C1F-GF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	3 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V		e0		240		.000012 Amp	20.47 mm	55 ns
STK12C68-SF45I	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5			1.27 mm	85 Cel		3-STATE	8KX8	8K	4.5 V	-40 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm		8.6865 mm		65536 bit	4.5 V					YES	.0025 Amp	18.3895 mm	45 ns
CY14B101LA-SP25XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		3	3/3.3	8	SMALL OUTLINE, SHRINK PITCH	SSOP48,.4		SRAMs	.635 mm	85 Cel			128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	2.794 mm		7.5 mm	Not Qualified	1048576 bit	2.7 V		e4	20	260		.005 Amp	15.875 mm	25 ns
CY14MB064Q2A-SXQ	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words				8	SMALL OUTLINE	SOP8,.25			1.27 mm	105 Cel			8KX8	8K		-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	1.638 mm	40 MHz	3.81 mm		65536 bit	2.7 V			30	260			4.902 mm
CY62157EV30LL-45BVI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	8388608 bit	2.2 V		e0		220	YES	.000008 Amp	8 mm	45 ns
CY62167DV30LL-45ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	37 mA	1048576 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	16777216 bit	2.2 V	CONFIGURABLE AS 2M X 8 ALSO	e4	20	260		.00001 Amp	18.4 mm	45 ns
CY62167GE30-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.75 mm	85 Cel			1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1	30	260			8 mm	45 ns
CY62256LL-70SNXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260			17.9324 mm	70 ns
CY7C1019BV33-15ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.63 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V							20.95 mm	15 ns
CY7C1019CV33-10ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	3.63 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	2.97 V		e3	20	260		.005 Amp	20.95 mm	10 ns
CY7C1041CV33-10BAIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	85 Cel			256KX16	256K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		7 mm	Not Qualified	4194304 bit	3 V		e0					8.5 mm	10 ns
CY7C1041G18-15ZSXI	Infineon Technologies	STANDARD SRAM		44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	1.8		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	2.2 V	1.194 mm	66.7 MHz	10.16 mm		4194304 bit	1.65 V		e4		260	YES	.008 Amp	18.415 mm	15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.