RECTANGULAR SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
DS1225AD-200+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDMA-P28		5.5 V				Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.01 Amp		200 ns
DS1250Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		3-STATE	512KX8	512K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-XDIP-T32		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0			YES	.005 Amp		70 ns
DS1250Y-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel			512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P32		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp		70 ns
DS1250Y-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel			512KX8	512K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P32		5.5 V				Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e3				.0006 Amp		70 ns
GS74116AGP-8I	Gsi Technology	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	PURE MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V				260		.02 Amp	18.41 mm	8 ns
GS84018AGT-166	Gsi Technology	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	310 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	256KX18	256K	3.14 V	0 Cel	PURE MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE			260		.02 Amp	20 mm	8.5 ns
GS84018CGB-150I	Gsi Technology	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm	85 Cel			256KX18	256K		-40 Cel		BOTTOM		R-PBGA-B119		2.7 V	1.99 mm		14 mm		4718592 bit	2.3 V	IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE		NOT SPECIFIED	NOT SPECIFIED			22 mm
GS8642Z18B-250IV	Gsi Technology	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY			1.27 mm	85 Cel			4MX18	4M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2 V	1.99 mm		14 mm	Not Qualified	75497472 bit	1.7 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	e0					22 mm	6.5 ns
HM62256BLSP-12	Renesas Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28		5.5 V				Not Qualified	262144 bit	4.5 V						.0001 Amp		120 ns
HM62256LP-8	Renesas Technology	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel			32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm		15.24 mm	Not Qualified	262144 bit	4.5 V							35.6 mm	85 ns
HM62256LP8	Advanced Electronic Packaging	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28		5.5 V	5.7 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00005 Amp	35.6 mm	85 ns
HY62WT08081E-DG70C	Sk Hynix	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3		8	SMALL OUTLINE	SOP28,.47		1.27 mm	70 Cel	NO	3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1, (NON-MUXED)	R-PDSO-G28		3.6 V	2.794 mm		8.69 mm	Not Qualified	262144 bit	2.7 V	IT ALSO OPERATES FROM 4.5 TO 5.5V				YES	.000005 Amp	18.39 mm	70 ns
IDT6116LA45TDB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel		3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.0002 Amp	32.004 mm	45 ns
IDT70V9269L12PRFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	85 Cel			16KX16	16K		-40 Cel	MATTE TIN	QUAD		R-PQFP-G128	3	3.6 V	1.6 mm		14 mm	Not Qualified	262144 bit	3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3					20 mm	25 ns
IDT70V9279L12PRFI8	Integrated Device Technology	MULTI-PORT SRAM	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		16	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	85 Cel			32KX16	32K		-40 Cel	TIN LEAD	QUAD		R-PQFP-G128	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V	PIPELINED OUTPUT MODE; SELF-TIMED WRITE CYCLE	e0					20 mm	12 ns
IDT71024S15TYGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	5.5 V	3.759 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260		.01 Amp	20.96 mm	15 ns
IDT71024S15TYI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	30	225		.01 Amp	20.96 mm	15 ns
IDT71256L20YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J28	3					Not Qualified	262144 bit			e3	40	260		.00012 Amp		20 ns
IDT71256L35YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.00012 Amp	17.9324 mm	35 ns
IDT71256L35YI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	105 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e0	30	225		.0002 Amp	17.9324 mm	35 ns
IDT71256SA15TPG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.572 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e3				.015 Amp	34.671 mm	15 ns
IDT71256SA20YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	20 ns
IDT7164S25YG8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	8KX8	8K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	25 ns
IDT71T75602S100BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	175 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel		3-STATE	512KX36	512K	2.38 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	100 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	22 mm	5 ns
IDT71T75602S133PFGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	215 mA	524288 words	COMMON	2.5	2.5	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	2.625 V		133 MHz		Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e3	30	260		.06 Amp		4.2 ns
IDT71T75602S150BGGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	235 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	150 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	3.8 ns
IDT71T75602S150PFG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	215 mA	524288 words	COMMON	2.5	2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel		3-STATE	512KX36	512K	2.38 V	0 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	2.625 V	1.6 mm	150 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e3	30	260		.04 Amp	20 mm	3.8 ns
IDT71T75602S150PFGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	235 mA	524288 words	COMMON	2.5	2.5	36	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel		3-STATE	512KX36	512K	2.38 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3			150 MHz		Not Qualified	18874368 bit			e3	30	260		.06 Amp		3.8 ns
IDT71T75802S133PFGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	215 mA	1048576 words	COMMON	2.5	2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel		3-STATE	1MX18	1M	2.38 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	2.625 V	1.6 mm	133 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e3	30	260		.06 Amp	20 mm	4.2 ns
IDT71V016SA12PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e3	30	260	YES	.01 Amp	18.41 mm	12 ns
IDT71V016SA12PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	30	260		.01 Amp	18.41 mm	12 ns
IDT71V016SA12PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e3	30	260		.01 Amp	18.41 mm	12 ns
IDT71V016SA15PHG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	30	260	YES	.01 Amp	18.41 mm	15 ns
IDT71V016SA15PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	64KX16	64K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e3	30	260	YES	.01 Amp	18.41 mm	15 ns
IDT71V016SA15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J44	3	3.6 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e3	40	260		.01 Amp	28.575 mm	15 ns
IDT71V016SA20YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel		3-STATE	64KX16	64K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J44	3	3.6 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V	ALSO OPERATES WITH 3V TO 3.6 V SUPPLY	e3	40	260		.01 Amp	28.575 mm	20 ns
IDT71V124S15YI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDSO-J32		3.6 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0					20.955 mm	15 ns
IDT71V124SA12PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.95 mm	12 ns
IDT71V124SA15PHG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.95 mm	15 ns
IDT71V124SA20PHGI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	115 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.95 mm	20 ns
IDT71V2556S133PFGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel			128KX36	128K		-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	4.2 ns
IDT71V2556SA100BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel			128KX36	128K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	5 ns
IDT71V2556SA133BGI8	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	310 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel		3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.045 Amp	22 mm	4.2 ns
IDT71V256SA10YG8	Integrated Device Technology	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-J28	3	3.6 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	3 V		e3	40	260	YES	.002 Amp	17.9324 mm	10 ns
IDT71V256SA12PZGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3 V		e3	40	260		.002 Amp	11.8 mm	12 ns
IDT71V256SA12YGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel			32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-J28		3.6 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	3 V		e3					17.9324 mm	12 ns
IDT71V256SA12YGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel		3-STATE	32KX8	32K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	3.6 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	3 V		e3	40	260		.002 Amp	17.9324 mm	12 ns
IDT71V256SA15YG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	3 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-J28	3	3.6 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	3 V		e3	40	260	YES	.002 Amp	17.9324 mm	15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.