RECTANGULAR SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IS62WV102416GBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX16	1M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
IS63LV1024L-12BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	36	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA36,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B36	3	3.45 V	1.2 mm		8 mm	Not Qualified	1048576 bit	3.15 V		e1	10	260		.0015 Amp	10 mm	12 ns
IS66WV51216EBLL-70TLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		8388608 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	70 ns
IS66WVE4M16EBLL-70BLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	70 ns
IS66WVS4M8ALL-104KLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			1.27 mm	85 Cel		4MX8	4M	1.65 V	-40 Cel		DUAL	1	R-XDSO-N8		1.95 V	.8 mm	104 MHz	5 mm		33554432 bit	1.65 V					NO	.0002 Amp	6 mm
IS66WVS4M8ALL-104NLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	1.8		8	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		4MX8	4M	1.65 V	-40 Cel		DUAL	1	R-PDSO-G8		1.95 V	1.75 mm	104 MHz	3.9 mm		33554432 bit	1.65 V					NO	.0002 Amp	4.9 mm
IS66WVS4M8ALL-104TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32			.8 mm	85 Cel		4MX8	4M	1.65 V	-40 Cel		DUAL	1	R-XDSO-N8		1.95 V	.6 mm	104 MHz	3 mm		33554432 bit	1.65 V					NO	.0002 Amp	4 mm
IS66WVS4M8BLL-104NLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		4MX8	4M	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	104 MHz	3.9 mm		33554432 bit	2.7 V					NO	.0002 Amp	4.9 mm
LP621024D-70LLF	Amic Technology	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDIP-T32		5.5 V	5.33 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	YES	.00001 Amp	41.91 mm	70 ns
M5M51008DVP-70HIBT	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE					85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		5.5 V					1048576 bit	4.5 V								70 ns
M5M51008DVP-70HIST	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V							18.4 mm	70 ns
M5M5408BFP-70H	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel		DUAL		R-PDSO-G32		5.5 V				Not Qualified	4194304 bit	4.5 V						.000015 Amp		70 ns
MB8464A-10LLPF	Fujitsu	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G28						Not Qualified	65536 bit			e0				.000002 Amp		100 ns
N25S818HAS21I	Onsemi	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	SEPARATE	1.8	1.8	8	SMALL OUTLINE	SOP8,.25		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	1.7 V	-40 Cel	MATTE TIN	DUAL	1, (3 LINE)	R-PDSO-G8	3	1.95 V	1.75 mm	16 MHz	3.91 mm	Not Qualified	262144 bit	1.7 V		e3	30	260		.0000005 Amp	4.9 mm
QS86446-15V	Quality Semiconductor	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	165 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.25 V				Not Qualified	262144 bit	4.75 V		e0			YES	.015 Amp		15 ns
R1LV0816ASA-5SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words				16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		512KX16	512K		-40 Cel		DUAL		R-PDSO-G48	3	2.7 V	1.2 mm		12 mm		8388608 bit	2.4 V	ACCESS TIME 55NS AVAILABLE WITH 2.7V TO 3.6V SUPPLY RANGE						18.4 mm	70 ns
R1LV1616RSA-7SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	2 V	-40 Cel		DUAL		R-PDSO-G48	2					Not Qualified	16777216 bit					260				70 ns
RMLV0816BGSB-4S2#AA0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL	1	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm		8388608 bit	2.4 V	IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS				YES	.00001 Amp	18.41 mm	45 ns
RMLV1616AGBG-4U2#AC0	Renesas Electronics	STANDARD SRAM		48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		7.5 mm		16777216 bit	2.7 V	CAN ALSO BE CONFIGURED AS 2M X 8				YES	.000008 Amp	8.5 mm	45 ns
STK12C68-SF45	Infineon Technologies	NON-VOLATILE SRAM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	8192 words	COMMON	5		8	SMALL OUTLINE	SOP28,.5			1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.794 mm		8.6865 mm		65536 bit	4.5 V					YES	.0015 Amp	18.3895 mm	45 ns
U632H64BD1K25	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	8192 words		5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3	5.5 V	5.1 mm		15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	37.1 mm	25 ns
U632H64BDC25	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3	5.5 V	5.1 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	34.7 mm	25 ns
U632H64BDC45	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3	5.5 V	5.1 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	34.7 mm	45 ns
U632H64BDK25	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	8192 words		5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3	5.5 V	5.1 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	34.7 mm	25 ns
U632H64BDK25G1	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	8192 words		5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T28	3	5.5 V	5.1 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	34.7 mm	25 ns
U632H64BDK45	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K		-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3	5.5 V	5.1 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	34.7 mm	45 ns
U632H64BSC25	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	3	5.5 V	2.54 mm		8.75 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	18.1 mm	25 ns
U632H64BSC45	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	3	5.5 V	2.54 mm		8.75 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	18.1 mm	45 ns
U632H64BSK45G1	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	85 Cel		8KX8	8K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.54 mm		8.75 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	18.1 mm	45 ns
U632H64SC25	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	3	5.5 V	2.54 mm		8.75 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp	18.1 mm	25 ns
W24257-70LL	Winbond Electronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.33 mm		15.24 mm	Not Qualified	262144 bit	4.5 V					YES		37.08 mm	70 ns
23K640T-E/ST	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		SRAMs	.65 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	16 MHz	3 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.00001 Amp	4.4 mm
23LC1024-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	IN-LINE	DIP8,.3		SRAMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		5.5 V	5.334 mm	20 MHz	7.62 mm	Not Qualified	1048576 bit	2.5 V		e3		260	NO	.00001 Amp	9.271 mm
70V9269L9PRFG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	128	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16384 words		3.3		16	FLATPACK					70 Cel		16KX16	16K		0 Cel	TIN	QUAD		R-PQFP-G128	3	3.6 V					262144 bit	3 V		e3		260				9 ns
70V9279L7PRFGI8	Renesas Electronics	DUAL-PORT SRAM	INDUSTRIAL	128	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	335 mA	32768 words	COMMON	3.3	3.3	16	FLATPACK	QFP128,.63X.87,20		SRAMs	.5 mm	85 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	MATTE TIN	QUAD	2	R-PQFP-G128	3			83 MHz		Not Qualified	524288 bit			e3	30	260		.015 Amp		7.5 ns
71024S20TYG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	20 ns
71024S20TYI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e0	30	225		.01 Amp	20.96 mm	20 ns
71124S15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	5.5 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	20.955 mm	15 ns
71256L20YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34			1.27 mm	85 Cel		32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm		262144 bit	4.5 V		e3	40	260	YES	.0006 Amp	17.9324 mm	20 ns
71256L25YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34			1.27 mm	70 Cel		32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm		262144 bit	4.5 V		e3		260	YES	.0006 Amp	17.9324 mm	25 ns
71256L25YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34			1.27 mm	85 Cel		32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm		262144 bit	4.5 V		e3		260	YES	.0006 Amp	17.9324 mm	25 ns
71256L35YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	115 mA	32768 words	COMMON	5		8	SMALL OUTLINE	SOJ28,.34			1.27 mm	70 Cel		32KX8	32K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm		262144 bit	4.5 V		e3		260	YES	.0006 Amp	17.9324 mm	35 ns
7164L20TPGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words		5		8	IN-LINE				2.54 mm	85 Cel		8KX8	8K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	4.572 mm		7.62 mm		65536 bit	4.5 V		e3					34.671 mm	19 ns
7164S20YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	19 ns
7164S25YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		8KX8	8K		0 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260			17.9324 mm	25 ns
7164S25YGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	170 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	65536 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	25 ns
71T75602S100BGG8	Renesas Electronics	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	175 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	2.38 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	100 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.04 Amp	22 mm	5 ns
71T75602S100BGGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	195 mA	524288 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	2.38 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	2.625 V	2.36 mm	100 MHz	14 mm	Not Qualified	18874368 bit	2.375 V	PIPELINED ARCHITECTURE	e1	30	260		.06 Amp	22 mm	5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.