RECTANGULAR SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
DS1225AD-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V				Not Qualified	65536 bit	4.5 V		e0				.005 Amp		70 ns
DS1225AD-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-PDMA-P28		5.5 V				Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp		70 ns
DS1225AD-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDIP-P28		5.5 V	10.668 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.01 Amp	38.227 mm	70 ns
DS1225Y-170+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	MATTE TIN	DUAL		R-XDMA-P28		5.5 V				Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.005 Amp		170 ns
DS1225Y-170	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	DUAL		R-XDMA-P28	1	5.5 V	10.54 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	38.865 mm	170 ns
DS1230Y-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-P28		5.5 V				Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0	20	240		.005 Amp		120 ns
DS1230Y-120+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P28	1	5.5 V				Not Qualified	262144 bit	4.5 V		e3				.0006 Amp		120 ns
DS1230Y-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-P28	1	5.5 V				Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0	20	240		.005 Amp		150 ns
DS1230Y-150+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-P28	1	5.5 V				Not Qualified	262144 bit	4.5 V		e3				.0006 Amp		150 ns
DS1230Y-70-IND	Dallas Semiconductor	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28		5.5 V				Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0				.005 Amp		70 ns
DS1230Y-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-P28		5.5 V				Not Qualified	262144 bit	4.5 V		e0				.005 Amp		70 ns
DS1230Y-70IND+	Analog Devices	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDIP-P28		5.5 V	9.4 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e3				.0006 Amp	38.227 mm	70 ns
DS1245AB-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-T32	1	5.25 V				Not Qualified	1048576 bit	4.75 V		e0	20	240		.005 Amp		120 ns
DS1245AB-120+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-T32	1	5.25 V				Not Qualified	1048576 bit	4.75 V		e3				.0006 Amp		120 ns
DS1245Y-85	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-T32	1	5.5 V				Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		85 ns
DS1245Y-85+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	Matte Tin (Sn) - annealed	DUAL		R-XDMA-T32		5.5 V				Not Qualified	1048576 bit	4.5 V		e3				.0006 Amp		85 ns
DS1245Y-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-T32		5.5 V				Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		85 ns
EDI88130CS55CB	Microsemi	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				125 Cel		128KX8	128K		-55 Cel		DUAL		R-CDIP-T32		5.5 V			10.16 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED				55 ns
FM25W256-S	Ramtron International	NON-VOLATILE SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			7 mA	32768 words			3/5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G8						Not Qualified	262144 bit			e0		240		.00015 Amp
GS816032DGT-150I	Gsi Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		524288 words		2.5		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX32	512K		-40 Cel		QUAD		R-PQFP-G100		2.7 V	1.6 mm		14 mm		16777216 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V		NOT SPECIFIED	NOT SPECIFIED			20 mm	7.5 ns
GS816032DGT-200I	Gsi Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		524288 words		2.5		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX32	512K		-40 Cel		QUAD		R-PQFP-G100		2.7 V	1.6 mm		14 mm		16777216 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V		NOT SPECIFIED	NOT SPECIFIED			20 mm	6.5 ns
GS816032DGT-250I	Gsi Technology	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		524288 words		2.5		32	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX32	512K		-40 Cel		QUAD		R-PQFP-G100		2.7 V	1.6 mm		14 mm		16777216 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V		NOT SPECIFIED	NOT SPECIFIED			20 mm	5.5 ns
GS864436GE-200I	Gsi Technology	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		2.5		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	2.7 V	1.5 mm		15 mm	Not Qualified	75497472 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V SUPPLY	e1		260			17 mm	6.5 ns
GS864436GE-200IV	Gsi Technology	CACHE SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		2MX36	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	2 V	1.4 mm		15 mm	Not Qualified	75497472 bit	1.7 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	e1		260			17 mm	6.5 ns
IDT6116LA35TDB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.0002 Amp	32.004 mm	35 ns
IDT71024S15TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-J32	3	5.5 V	3.76 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.01 Amp	20.96 mm	15 ns
IDT71024S15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.01 Amp	20.955 mm	15 ns
IDT71256SA12YGI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	12 ns
IDT71256SA12YGI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	17.9324 mm	12 ns
IDT71256SA15PZGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	11.8 mm	15 ns
IDT71256SA20PZGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G28	3	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e3	40	260	YES	.015 Amp	11.8 mm	20 ns
IDT71256SA25PZGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		e3	40	260		.015 Amp	11.8 mm	25 ns
IDT71256SA25YI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-J28	3	5.5 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	4.5 V		e0	30	225		.015 Amp	17.9324 mm	25 ns
IDT71V124SA10PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3.15 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.95 mm	10 ns
IDT71V256SA12PZG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3 V		e3	40	260		.002 Amp	11.8 mm	12 ns
IDT71V424S12PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	12 ns
IDT71V424S12PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	12 ns
IDT71V65603S133PFGI	Renesas Electronics	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	320 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	BURST COUNTER	e3	30	260		.06 Amp	20 mm	4.2 ns
IDT71V67603S150PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX36	256K		-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	3.8 ns
IDT71V67603S150PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX36	256K		-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	3.8 ns
IDT71V67703S85BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	30	225		.07 Amp	15 mm	8.5 ns
IS61C6416AL-12KI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	55 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44	3	5.5 V	3.75 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.0001 Amp	28.575 mm	12 ns
IS61WV102416BLL-10MI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	95 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	16777216 bit	2.4 V		e0	30	235		.02 Amp	11 mm	10 ns
IS61WV204816BLL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		2MX16	2M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		33554432 bit	2.4 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	10 ns
IS61WV204816BLL-10TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		2MX16	2M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		33554432 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	10 ns
IS61WV25616BLL-10BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.009 Amp		10 ns
IS62WV102416FBLL-45BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm		16777216 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	45 ns
IS62WV102416GBLL-45TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		1MX16	1M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.