UNSPECIFIED SRAM 791

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-8685906XA	Defense Logistics Agency	OTHER SRAM	MILITARY	28	QCCN	UNSPECIFIED		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER				1.27 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	QUAD		X-CQCC-N28		5.5 V	2.54 mm		11.4554 mm	Qualified	65536 bit	4.5 V		e0					11.4554 mm	55 ns
5962-8685905XA	Defense Logistics Agency	OTHER SRAM	MILITARY	28	QCCN	UNSPECIFIED		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER				1.27 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	QUAD		X-CQCC-N28		5.5 V	2.54 mm		11.4554 mm	Qualified	65536 bit	4.5 V		e0					11.4554 mm	55 ns
71V35761SA166BGGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	330 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		X-PBGA-B119	3	3.465 V		166 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.035 Amp		3.5 ns
71V35761SA183BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		X-PBGA-B119	3	3.465 V		183 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.035 Amp		3.3 ns
71V35761SA183BGGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	UNSPECIFIED		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM		X-PBGA-B119	3	3.465 V		183 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.035 Amp		3.3 ns
N04M1618L1AW-150I	Onsemi	STANDARD SRAM	INDUSTRIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	UNCASED CHIP					85 Cel		256KX16	256K		-40 Cel		UPPER		X-XUUC-N		2.3 V				Not Qualified	4194304 bit	1.4 V								150 ns
N02M0818L1AW-150I	Onsemi	STANDARD SRAM	INDUSTRIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words		1.8		8	UNCASED CHIP					85 Cel		256KX8	256K		-40 Cel		UPPER		X-XUUC-N		2.3 V				Not Qualified	2097152 bit	1.4 V								150 ns
N04Q1618C2BW-15C	Onsemi	STANDARD SRAM	COMMERCIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	UNCASED CHIP					70 Cel		256KX16	256K		0 Cel	TIN LEAD	UPPER		X-XUUC-N		1.95 V				Not Qualified	4194304 bit	1.65 V		e0						150 ns
N02M0818L1AW-85I	Onsemi	STANDARD SRAM	INDUSTRIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words		1.8		8	UNCASED CHIP					85 Cel		256KX8	256K		-40 Cel		UPPER		X-XUUC-N		2.3 V				Not Qualified	2097152 bit	1.7 V								85 ns
N01M0818L1AW-85I	Onsemi	STANDARD SRAM	INDUSTRIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		1.8		8	UNCASED CHIP					85 Cel		128KX8	128K		-40 Cel		UPPER		X-XUUC-N		2.3 V				Not Qualified	1048576 bit	1.7 V								85 ns
N04Q1612C2BW-15C	Onsemi	STANDARD SRAM	COMMERCIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words		1.2		16	UNCASED CHIP					70 Cel		256KX16	256K		0 Cel	TIN LEAD	UPPER		X-XUUC-N		1.3 V				Not Qualified	4194304 bit	1.1 V		e0						150 ns
N08M1618L1AD-85I	Onsemi	STANDARD SRAM	INDUSTRIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		1.8		16	UNCASED CHIP					85 Cel		512KX16	512K		-40 Cel		UPPER		X-XUUC-N		2.2 V				Not Qualified	8388608 bit	1.4 V								85 ns
N04Q1618C2BW-70C	Onsemi	STANDARD SRAM	COMMERCIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	UNCASED CHIP					70 Cel		256KX16	256K		0 Cel	TIN LEAD	UPPER		X-XUUC-N		1.95 V				Not Qualified	4194304 bit	1.65 V		e0						70 ns
N04M1618L1AW-85I	Onsemi	STANDARD SRAM	INDUSTRIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	UNCASED CHIP					85 Cel		256KX16	256K		-40 Cel		UPPER		X-XUUC-N		2.3 V				Not Qualified	4194304 bit	1.4 V								85 ns
N01M0818L1AW-15I	Onsemi	STANDARD SRAM	INDUSTRIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		1.8		8	UNCASED CHIP					85 Cel		128KX8	128K		-40 Cel		UPPER		X-XUUC-N		2.3 V				Not Qualified	1048576 bit	1.4 V								150 ns
N04Q1618C2BW-85C	Onsemi	STANDARD SRAM	COMMERCIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	UNCASED CHIP					70 Cel		256KX16	256K		0 Cel	TIN LEAD	UPPER		X-XUUC-N		1.95 V				Not Qualified	4194304 bit	1.65 V		e0						85 ns
N08M1618L1AD-150I	Onsemi	STANDARD SRAM	INDUSTRIAL		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		1.8		16	UNCASED CHIP					85 Cel		512KX16	512K		-40 Cel		UPPER		X-XUUC-N		2.2 V				Not Qualified	8388608 bit	1.4 V								150 ns
M69KB128AA70DW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.0002 Amp		70 ns
M69KB128AA70CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.0002 Amp		70 ns
M69KB128AA85DW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.0002 Amp		85 ns
M69KB128ABCW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.00001 Amp		70 ns
M69KB128ABDW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.00001 Amp		70 ns
M69KB096AB70CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00001 Amp		70 ns
M69KB096AA70CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00012 Amp		70 ns
M69KB048BD70W8T	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	UNCASED CHIP					85 Cel		2MX16	2M		-30 Cel	TIN LEAD	UPPER		X-XUUC-N		1.95 V				Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e0						70 ns
M69KB096AB70DW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00001 Amp		70 ns
M69KB048BD70W8F	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	UNCASED CHIP					85 Cel		2MX16	2M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE		40	NOT SPECIFIED				70 ns
M69AB048BD70W8F	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	UNCASED CHIP	BGA71,8X12,32		Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE		40	NOT SPECIFIED		.00001 Amp		70 ns
M69KB096AA85CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00012 Amp		85 ns
M69KM096AACW8	STMicroelectronics	PSEUDO STATIC RAM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE					.00001 Amp		70 ns
M69KB096AA70AW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00012 Amp		70 ns
M69KB096AA85AW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00012 Amp		85 ns
M69KM048AACW8	STMicroelectronics	PSEUDO STATIC RAM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS	40 mA	2097152 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	2MX16	2M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	33554432 bit	1.7 V						.00007 Amp		70 ns
M69KB128AA85CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.0002 Amp		85 ns
M69KB128AA70AW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.0002 Amp		70 ns
M69AB048BD70W8T	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	UNCASED CHIP	BGA71,8X12,32		Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	TIN LEAD	UPPER		X-XUUC-N		1.95 V				Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e0				.00001 Amp		70 ns
M69KB128AA85AW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER		Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.0002 Amp		85 ns
CYRS1543AV18-1XWI	Infineon Technologies	QDR SRAM	MILITARY		DIE	UNSPECIFIED	300k Rad(Si)	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	UNCASED CHIP					125 Cel		4MX18	4M		-55 Cel		UPPER		X-XUUC-N		1.9 V					75497472 bit	1.7 V	BURST ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED
CY62165E-3XWI	Infineon Technologies	STANDARD SRAM			DIE	UNSPECIFIED		UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		1024 words	COMMON			16	UNCASED CHIP	DIE OR CHIP				85 Cel		1KX16	1K		-40 Cel		UNSPECIFIED	1	X-XUUC-N		5.5 V					16384 bit	1.65 V					NO
TH6S1651A0A	Toshiba	SRAM CARD		68		UNSPECIFIED		UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				524288 words				16	MICROELECTRONIC ASSEMBLY							512KX16	512K				UNSPECIFIED		X-XXMA-X68						Not Qualified	8388608 bit									150 ns
TH6P1620A0	Toshiba	PSEUDO STATIC RAM		68		UNSPECIFIED		UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				2097152 words				16	MICROELECTRONIC ASSEMBLY							2MX16	2M				UNSPECIFIED		X-XXMA-X68						Not Qualified	33554432 bit									150 ns
TH6S1625A0UA-15	Toshiba	SRAM CARD	COMMERCIAL	68		UNSPECIFIED		UNSPECIFIED	NO	1	MOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY		16			55 Cel	3-STATE	512KX8	512K		0 Cel		UNSPECIFIED	1	X-XXMA-X68		5.25 V				Not Qualified	4194304 bit	4.75 V	EEPROM ATTRIBUTE MEMORY; BATTERY BACKUP				YES			150 ns
TH6P1651A0	Toshiba	PSEUDO STATIC RAM		68		UNSPECIFIED		UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				524288 words				16	MICROELECTRONIC ASSEMBLY							512KX16	512K				UNSPECIFIED		X-XXMA-X68						Not Qualified	8388608 bit									150 ns
TH6P1610A0	Toshiba	PSEUDO STATIC RAM		68		UNSPECIFIED		UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				1048576 words				16	MICROELECTRONIC ASSEMBLY							1MX16	1M				UNSPECIFIED		X-XXMA-X68						Not Qualified	16777216 bit									150 ns
TH6S1612A0A	Toshiba	SRAM CARD		68		UNSPECIFIED		UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				131072 words				16	MICROELECTRONIC ASSEMBLY							128KX16	128K				UNSPECIFIED		X-XXMA-X68						Not Qualified	2097152 bit									150 ns
THMS161620Z-25	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED		UNSPECIFIED		1	CMOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		16	MICROELECTRONIC ASSEMBLY					70 Cel		16KX16	16K		0 Cel	TIN LEAD	UNSPECIFIED		X-XXMA-X40		5.5 V				Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE	e0						25 ns
TH6S1610A0A	Toshiba	SRAM CARD		68		UNSPECIFIED		UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				1048576 words				16	MICROELECTRONIC ASSEMBLY							1MX16	1M				UNSPECIFIED		X-XXMA-X68						Not Qualified	16777216 bit									150 ns
TH6S1612A0UA-15	Toshiba	SRAM CARD	COMMERCIAL	68		UNSPECIFIED		UNSPECIFIED	NO	1	MOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		262144 words		5		8	MICROELECTRONIC ASSEMBLY		16			55 Cel	3-STATE	256KX8	256K		0 Cel		UNSPECIFIED	1	X-XXMA-X68		5.25 V				Not Qualified	2097152 bit	4.75 V	EEPROM ATTRIBUTE MEMORY; BATTERY BACKUP				YES			150 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.