UNSPECIFIED SRAM 791

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Maximum Access Time
THMS121620Z-25	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED	UNSPECIFIED		1	CMOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		12	MICROELECTRONIC ASSEMBLY					70 Cel		16KX12	16K		0 Cel	TIN LEAD	UNSPECIFIED		X-XXMA-X40		5.5 V		Not Qualified	196608 bit	4.5 V		e0					25 ns
TH6S1625A0A	Toshiba	SRAM CARD		68		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				262144 words				16	MICROELECTRONIC ASSEMBLY							256KX16	256K				UNSPECIFIED		X-XXMA-X68				Not Qualified	4194304 bit								150 ns
TH6S1651A0UA-15	Toshiba	SRAM CARD	COMMERCIAL	68		UNSPECIFIED	UNSPECIFIED	NO	1	MOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		1048576 words		5		8	MICROELECTRONIC ASSEMBLY		16			55 Cel	3-STATE	1MX8	1M		0 Cel		UNSPECIFIED	1	X-XXMA-X68		5.25 V		Not Qualified	8388608 bit	4.75 V	EEPROM ATTRIBUTE MEMORY; BATTERY BACKUP				YES		150 ns
THMS121620Z-35	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		12	MICROELECTRONIC ASSEMBLY					70 Cel		16KX12	16K		0 Cel	TIN LEAD	UNSPECIFIED		X-XXMA-X40		5.5 V		Not Qualified	196608 bit	4.5 V		e0					35 ns
THMS161620Z-35	Toshiba	CACHE SRAM MODULE	COMMERCIAL	40		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		16384 words		5		16	MICROELECTRONIC ASSEMBLY					70 Cel		16KX16	16K		0 Cel	TIN LEAD	UNSPECIFIED		X-XXMA-X40		5.5 V		Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE	e0					35 ns
TH6S1610A0UA-15	Toshiba	SRAM CARD	COMMERCIAL	68		UNSPECIFIED	UNSPECIFIED	NO	1	MOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY		16			55 Cel	3-STATE	2MX8	2M		0 Cel		UNSPECIFIED	1	X-XXMA-X68		5.25 V		Not Qualified	16777216 bit	4.75 V	EEPROM ATTRIBUTE MEMORY; BATTERY BACKUP				YES		150 ns
7142SA55PDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		8	IN-LINE					70 Cel		2KX8	2K		0 Cel		DUAL		X-PDIP-T48		5.5 V			16384 bit	4.5 V							55 ns
7142LA35PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	295 mA	2048 words		5		8	IN-LINE					125 Cel		2KX8	2K		-55 Cel		DUAL		X-PDIP-T48		5.5 V			16384 bit	4.5 V							35 ns
7142SA35PDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		8	IN-LINE					70 Cel		2KX8	2K		0 Cel		DUAL		X-PDIP-T48		5.5 V			16384 bit	4.5 V							35 ns
7142LA55PDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		8	IN-LINE					70 Cel		2KX8	2K		0 Cel		DUAL		X-PDIP-T48		5.5 V			16384 bit	4.5 V							55 ns
7142LA100PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2048 words		5		8	IN-LINE					125 Cel		2KX8	2K		-55 Cel		DUAL		X-PDIP-T48		5.5 V			16384 bit	4.5 V							100 ns
7142LA55PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	285 mA	2048 words		5		8	IN-LINE					125 Cel		2KX8	2K		-55 Cel		DUAL		X-PDIP-T48		5.5 V			16384 bit	4.5 V							55 ns
7142SA100PDG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	48	DIP	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	155 mA	2048 words		5		8	IN-LINE					70 Cel		2KX8	2K		0 Cel		DUAL		X-PDIP-T48		5.5 V			16384 bit	4.5 V							100 ns
7142SA35PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	325 mA	2048 words		5		8	IN-LINE					125 Cel		2KX8	2K		-55 Cel		DUAL		X-PDIP-T48		5.5 V			16384 bit	4.5 V							35 ns
7142SA55PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	315 mA	2048 words		5		8	IN-LINE					125 Cel		2KX8	2K		-55 Cel		DUAL		X-PDIP-T48		5.5 V			16384 bit	4.5 V							55 ns
7142SA100PDGB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	2048 words		5		8	IN-LINE					125 Cel		2KX8	2K		-55 Cel		DUAL		X-PDIP-T48		5.5 V			16384 bit	4.5 V							100 ns
70V7519S166BCG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY					70 Cel		256KX36	256K		0 Cel		BOTTOM		X-PBGA-B256		3.45 V			9437184 bit	3.15 V							3.6 ns
70P926850BZG	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	25 mA	16384 words	COMMON	1.8	1.8	16	GRID ARRAY	BGA100,10X10,20		SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	X-PBGA-B100	3	1.9 V	50 MHz	Not Qualified	262144 bit	1.7 V	FLOW-THROUGH	e1	30	260		.000008 Amp	10 ns
7006S20GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	370 mA	16384 words		5		8	GRID ARRAY					85 Cel		16KX8	16K		-40 Cel		PERPENDICULAR		X-PPGA-P68		5.5 V			131072 bit	4.5 V							20 ns
70V7599S133DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	QFP	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	675 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel		QUAD	2	X-PQFP-G208		3.45 V	133 MHz	Not Qualified	4718592 bit	3.15 V						.04 Amp	4.2 ns
5962-9166210MXX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS		4096 words		5		16	GRID ARRAY					125 Cel		4KX16	4K		-55 Cel	TIN LEAD	PERPENDICULAR		X-CPGA-P84		5.5 V		Qualified	65536 bit	4.5 V		e0					25 ns
70V07S35JGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	CHIP CARRIER					85 Cel		32KX8	32K		-40 Cel		QUAD		X-PQCC-J68		3.6 V			262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			35 ns
70V7599S133BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	675 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel		BOTTOM	2	X-PBGA-B256		3.45 V	133 MHz	Not Qualified	4718592 bit	3.15 V						.04 Amp	4.2 ns
70V7599S133BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	675 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel		BOTTOM	2	X-PBGA-B208		3.45 V	133 MHz	Not Qualified	4718592 bit	3.15 V						.04 Amp	4.2 ns
70V07L35GGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY					85 Cel		32KX8	32K		-40 Cel		PERPENDICULAR		X-PPGA-P68		3.6 V			262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			35 ns
70V7519S133DRGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	QFP	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK					85 Cel		256KX36	256K		-40 Cel		QUAD		X-PQFP-G208		3.45 V			9437184 bit	3.15 V							4.2 ns
70T3509MS133BPG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		36	GRID ARRAY					70 Cel		1MX36	1M		0 Cel		BOTTOM		X-PBGA-B256		2.6 V			37748736 bit	2.4 V							4.2 ns
70V07S35GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY					85 Cel		32KX8	32K		-40 Cel		PERPENDICULAR		X-PPGA-P68		3.6 V			262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			35 ns
70V07S35PFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	80	QFP	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	FLATPACK					85 Cel		32KX8	32K		-40 Cel		QUAD		X-PQFP-G80		3.6 V			262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			35 ns
70V7599S133DRGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	QFP	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	675 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK	QFP208,1.2SQ,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel		QUAD	2	X-PQFP-G208		3.45 V	133 MHz	Not Qualified	4718592 bit	3.15 V						.04 Amp	4.2 ns
70V7599S133BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	675 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel		BOTTOM	2	X-PBGA-B208		3.45 V	133 MHz	Not Qualified	4718592 bit	3.15 V						.04 Amp	4.2 ns
70V7519S133BCGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY					85 Cel		256KX36	256K		-40 Cel		BOTTOM		X-PBGA-B256		3.45 V			9437184 bit	3.15 V							4.2 ns
70V7519S133BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY					85 Cel		256KX36	256K		-40 Cel		BOTTOM		X-PBGA-B208		3.45 V			9437184 bit	3.15 V							4.2 ns
70V07S35GGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY					85 Cel		32KX8	32K		-40 Cel		PERPENDICULAR		X-PPGA-P68		3.6 V			262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			35 ns
70V07L35GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY					85 Cel		32KX8	32K		-40 Cel		PERPENDICULAR		X-PPGA-P68		3.6 V			262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			35 ns
7006L20GGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	PGA	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	320 mA	16384 words		5		8	GRID ARRAY					85 Cel		16KX8	16K		-40 Cel		PERPENDICULAR		X-PPGA-P68		5.5 V			131072 bit	4.5 V							20 ns
70V07S35PFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	80	QFP	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	FLATPACK					85 Cel		32KX8	32K		-40 Cel		QUAD		X-PQFP-G80		3.6 V			262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			35 ns
70T3509MS133BPGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		2.5		36	GRID ARRAY					85 Cel		1MX36	1M		-40 Cel		BOTTOM		X-PBGA-B256		2.6 V			37748736 bit	2.4 V							4.2 ns
70P926850BZGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	100	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	25 mA	16384 words	COMMON	1.8	1.8	16	GRID ARRAY	BGA100,10X10,20		SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	X-PBGA-B100	3	1.9 V	50 MHz	Not Qualified	262144 bit	1.7 V	FLOW-THROUGH	e1	30	260		.000008 Amp	10 ns
5962-9166210MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	350 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11		SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	2 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	X-CPGA-P84		5.5 V		Qualified	65536 bit	4.5 V		e0				.004 Amp	25 ns
5962-9166209MXX	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS		4096 words		5		16	GRID ARRAY					125 Cel		4KX16	4K		-55 Cel	TIN LEAD	PERPENDICULAR		X-CPGA-P84		5.5 V		Qualified	65536 bit	4.5 V		e0					25 ns
70V7519S133BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY					85 Cel		256KX36	256K		-40 Cel		BOTTOM		X-PBGA-B256		3.45 V			9437184 bit	3.15 V							4.2 ns
70V07S35JGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	68	QCCJ	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	CHIP CARRIER					85 Cel		32KX8	32K		-40 Cel		QUAD		X-PQCC-J68		3.6 V			262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			35 ns
70V7599S133BCGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	256	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	675 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA256,16X16,40		SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.15 V	-40 Cel		BOTTOM	2	X-PBGA-B256		3.45 V	133 MHz	Not Qualified	4718592 bit	3.15 V						.04 Amp	4.2 ns
70V7519S133DRGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	QFP	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK					85 Cel		256KX36	256K		-40 Cel		QUAD		X-PQFP-G208		3.45 V			9437184 bit	3.15 V							4.2 ns
5962-9166209MXA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	84	PGA	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	410 mA	4096 words	COMMON	5	5	16	GRID ARRAY	PGA84M,11X11		SRAMs	2.54 mm	125 Cel	3-STATE	4KX16	4K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	X-CPGA-P84		5.5 V		Qualified	65536 bit	4.5 V		e0				.03 Amp	25 ns
70V7519S133BFGI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY					85 Cel		256KX36	256K		-40 Cel		BOTTOM		X-PBGA-B208		3.45 V			9437184 bit	3.15 V							4.2 ns
70V7519S166DRG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	QFP	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK					70 Cel		256KX36	256K		0 Cel		QUAD		X-PQFP-G208		3.45 V			9437184 bit	3.15 V							3.6 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.