AUTOMOTIVE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5C2561DJ-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	95 mA	262144 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	256KX1	256K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	262144 bit			e0		.005 Amp		30 ns
MT5C2568Z-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28	5.5 V	10.16 mm	2.8 mm	Not Qualified	262144 bit	4.5 V		e0	YES	.0003 Amp	35.455 mm	12 ns
MT5C256K4A1DJ-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	2 V	-40 Cel		DUAL	1	R-PDSO-J32	5.5 V	3.68 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V			YES		20.98 mm
MT5LC256K16D4DJ-12PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K		-40 Cel		DUAL	1	R-PDSO-J54	3.6 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	3 V			YES		22.25 mm	12 ns
MT5C2564DJ-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.0003 Amp	15.9 mm	30 ns
MT5C256K16B2TG-15PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3	YES		22.25 mm	15 ns
MT5C2568EC-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28				Not Qualified	262144 bit			e0		.008 Amp		25 ns
MT5C2565DJ-35PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel		64KX4	64K		-40 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.66 mm	7.62 mm	Not Qualified	262144 bit	4.5 V			YES		18.44 mm	35 ns
MT5LC1M4C3DJ25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32				Not Qualified	4194304 bit			e0				25 ns
MT5C1008-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	165 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.32 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0	YES	.00015 Amp	40.135 mm	15 ns
MT5C6406DJ-10LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm	7.67 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.00025 Amp	18.44 mm	10 ns
MT5C6407DJ-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm	7.67 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.00025 Amp	18.44 mm	15 ns
MT5C1606EC-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28				Not Qualified	16384 bit			e0		.003 Amp		25 ns
MT5C1005-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.32 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.00015 Amp	35.05 mm	12 ns
MT5LC1005SJ-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	2 V	-40 Cel		DUAL	1	R-PDSO-J28	3.6 V	3.66 mm	7.67 mm	Not Qualified	1048576 bit	3 V			YES		18.44 mm	35 ns
MT5C6404C-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22				Not Qualified	65536 bit			e0		.005 Amp		25 ns
MT5C1008W-45LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	5.59 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.0002 Amp	41.91 mm	45 ns
MT5C64K16A1TG-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		64KX16	64K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	YES		20.95 mm
MT5C2561DJ-10LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		1	SMALL OUTLINE			1.27 mm	125 Cel		256KX1	256K	2 V	-40 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	262144 bit	4.5 V			NO		15.9 mm	10 ns
MT5C2564DJ-20LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.0005 Amp	15.9 mm	20 ns
MT5C1607-35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	16384 bit			e0		.003 Amp		35 ns
MT5C2565DJ-15PATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	64KX4	64K		-40 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.68 mm	7.67 mm	Not Qualified	262144 bit	4.5 V			YES		18.44 mm	15 ns
MT5C1005-45AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	1048576 bit			e0		.007 Amp		45 ns
MT5C1001DJ-12LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		1	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.68 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V		e0	NO		18.44 mm	12 ns
TTS92256GK-20C-5	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-40 Cel		QUAD		R-XQCC-N28				Not Qualified	262144 bit					.0003 Amp		20 ns
MT5LC2568DJ-25PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		32KX8	32K		-40 Cel		DUAL	1	R-PDSO-J28	3.6 V	3.66 mm	7.62 mm	Not Qualified	262144 bit	3 V			YES		18.44 mm
MT5C1601C-12AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	SEPARATE	5	5	1	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX1	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20				Not Qualified	16384 bit			e0				12 ns
MT5C1009DJ-25LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.68 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	YES		20.98 mm	25 ns
MT5C2564SG-20LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	2.72 mm	7.5 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.0003 Amp	15.4 mm	20 ns
MT5C6407-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0		.003 Amp		25 ns
MT5C1009-70LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.32 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	YES	.0002 Amp	40.135 mm	70 ns
MT5C1009DJ-55AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	110 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32				Not Qualified	1048576 bit			e0		.005 Amp		55 ns
MT5C1001DJ-20LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.68 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V		e0	NO	.001 Amp	18.44 mm	20 ns
MT5LC1001DJ-20LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	65 mA	1048576 words	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.6 V	3.68 mm	10.21 mm	Not Qualified	1048576 bit	3 V		e0	NO	.00005 Amp	18.44 mm	20 ns
MT5C1605DJ-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	16384 bit			e0		.00025 Amp		30 ns
MT5C6408EC-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28				Not Qualified	65536 bit			e0		.005 Amp		30 ns
MT5C1607-12AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	16384 bit			e0		.003 Amp		12 ns
MT5C6408DJ-10LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm	7.67 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0	YES	.00025 Amp	18.44 mm	10 ns
MT5C2565DJ-45LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm	7.67 mm	Not Qualified	262144 bit	4.5 V		e0	YES	.0003 Amp	18.44 mm	45 ns
MT5LC2568-20LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3.6 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	3 V		e0	YES	.00005 Amp	36.83 mm	20 ns
MT5C6407-12AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0		.003 Amp		12 ns
MT5C2568DJ-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	175 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm	7.67 mm	Not Qualified	262144 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0	YES	.0005 Amp	18.44 mm	15 ns
MT5C256K16B2DJ-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K	2 V	-40 Cel		DUAL	1	R-PDSO-J54	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V			YES		22.25 mm	15 ns
MT5LC128K8D4DJ-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.68 mm	10.16 mm	Not Qualified	1048576 bit	3 V			YES		20.98 mm
MT5C2568DJ-35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	262144 bit			e0		.007 Amp		35 ns
MT5C4108DJ-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	1	R-PDSO-J36	5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V			YES		23.52 mm	12 ns
MT5C1604EC-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	20	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC20,.3X.43	SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N20				Not Qualified	16384 bit			e0				30 ns
MT5C6401EC-15AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	SEPARATE	5	5	1	CHIP CARRIER	LCC22,.3X.5	SRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N22				Not Qualified	65536 bit			e0		.005 Amp		15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.