AUTOMOTIVE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
23K640-E/ST	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	16 MHz	3 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.00001 Amp	4.4 mm
CY7C1021BN-15VXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	125 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.015 Amp	28.575 mm	15 ns
23K640-E/SN	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.00001 Amp	4.9 mm
CY62167G30-45BVXAT	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	125 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1		260	YES		8 mm	45 ns
CY62157EV30LL-55ZSXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	2.2 V		e4	20	260	YES	.00003 Amp	18.415 mm	55 ns
IS64WV102416BLL-10MLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	125 Cel	3-STATE	1MX16	1M	1.2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	16777216 bit	2.4 V		e1	10	260		.05 Amp	11 mm	10 ns
IS64WV102416BLL-10MLA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	125 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		9 mm		16777216 bit	2.4 V							11 mm	10 ns
23K640-E/P	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	IN-LINE	DIP8,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm	16 MHz	7.62 mm	Not Qualified	65536 bit	2.7 V		e3			NO	.00001 Amp	9.271 mm
IS64C6416AL-15TLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	10	260		.000125 Amp	18.415 mm	15 ns
23LC1024T-E/SN	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V		e3		260	NO	.00002 Amp	4.9 mm
CY7C1021BN-15VXET	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	125 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4				.015 Amp	28.575 mm	15 ns
IS64WV204816BLL-12CTLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE			.5 mm	125 Cel		2MX16	2M		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		33554432 bit	2.4 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	12 ns
23K640T-E/ST	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	SRAMs	.65 mm	125 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	16 MHz	3 mm	Not Qualified	65536 bit	2.7 V		e3	40	260	NO	.00001 Amp	4.4 mm
IS64WV102416BLL-10MA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	125 Cel	3-STATE	1MX16	1M	1.2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	16777216 bit	2.4 V		e0				.05 Amp	11 mm	10 ns
IS64WV204816BLL-12BLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	125 Cel		2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm		33554432 bit	2.4 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	12 ns
23LC1024-E/SN	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V		e3	40	260	NO	.00002 Amp	4.9 mm
CY7C1021BN-15ZSXET	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.015 Amp	18.415 mm	15 ns
IS64C1024AL-15KA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.0005 Amp	20.95 mm	15 ns
IS64C1024AL-15KA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	1048576 bit							.0005 Amp		15 ns
IS64C1024AL-15KLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			20.95 mm	15 ns
IS64C1024AL-15KLA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			20.95 mm	15 ns
IS64C1024AL-15TA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0				.0005 Amp	18.4 mm	15 ns
IS64C1024AL-15TA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-J32						Not Qualified	1048576 bit							.0005 Amp		15 ns
IS64C1024AL-15TLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		8 mm		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	YES	.0005 Amp	18.4 mm	15 ns
CY62128ELL-55ZAXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.00003 Amp	11.8 mm	55 ns
CY7C1041CV33-12ZSXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e4	20	260			18.415 mm	12 ns
CY62256VNLL-70SNXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	1.4 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	3.6 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	2.7 V		e4	20	260		.00005 Amp	17.9324 mm	70 ns
CY14B104NA-BA45XE	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	125 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm		4194304 bit	3 V		e1	20	260			10 mm	45 ns
CY14B104NA-ZS25XE	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	3 V				260			18.415 mm	25 ns
CY62137FV30LL-55ZSXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000012 Amp	18.415 mm	55 ns
CY62157ELL-55BVXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	5	5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSOP44,.46,32	SRAMs	.75 mm	125 Cel	3-STATE	512KX16	512K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	5.5 V	1 mm		6 mm	Not Qualified	8388608 bit	4.5 V		e1	20	260		.00003 Amp	8 mm	55 ns
CY62256NLL-55SNXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm		7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260		.00001 Amp	17.9324 mm	55 ns
CY7C1011G30-12ZSXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words				16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		128KX16	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		2097152 bit	2.2 V		e4		260			18.415 mm	12 ns
CY7C1020CV33-15ZSXET	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	32KX16	32K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.63 V	1.194 mm		10.16 mm	Not Qualified	524288 bit	2.97 V		e4	20	260		.01 Amp	18.415 mm	15 ns
CY7C1041CV33-20ZSXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e4	20	260		.015 Amp	18.415 mm	20 ns
54F189LLQB	Texas Instruments	STANDARD SRAM	AUTOMOTIVE	20	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		16X4	16		-40 Cel		QUAD		S-CQCC-N20		5.5 V	1.905 mm		8.89 mm		64 bit	4.5 V							8.89 mm	32 ns
54F189FLQB	Texas Instruments	STANDARD SRAM	AUTOMOTIVE	16	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		16 words		5		4	FLATPACK			1.27 mm	125 Cel		16X4	16		-40 Cel		DUAL		R-GDFP-F16		5.5 V	2.032 mm		6.604 mm		64 bit	4.5 V							9.6645 mm	32 ns
54F189LL	Texas Instruments	STANDARD SRAM	AUTOMOTIVE	20	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		16X4	16		-40 Cel		QUAD		S-CQCC-N20		5.5 V	1.905 mm		8.89 mm		64 bit	4.5 V							8.89 mm	32 ns
54F189FL	Texas Instruments	STANDARD SRAM	AUTOMOTIVE	16	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		16 words		5		4	FLATPACK			1.27 mm	125 Cel		16X4	16		-40 Cel		DUAL		R-GDFP-F16		5.5 V	2.032 mm		6.604 mm		64 bit	4.5 V							9.6645 mm	32 ns
54F189DL	Texas Instruments	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE			2.54 mm	125 Cel		16X4	16		-40 Cel		DUAL		R-GDIP-T16		5.5 V	5.08 mm		7.62 mm		64 bit	4.5 V	LG-MAX						19.94 mm	32 ns
54F189DLQB	Texas Instruments	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE			2.54 mm	125 Cel		16X4	16		-40 Cel		DUAL		R-GDIP-T16		5.5 V	5.08 mm		7.62 mm		64 bit	4.5 V	LG-MAX						19.94 mm	32 ns
N01S830BAT22E	Onsemi	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	125 Cel		128KX8	128K		-40 Cel	TIN	DUAL		R-PDSO-G8	3	5.5 V	1.1 mm		3 mm		1048576 bit	2.5 V		e3	30	260			4.4 mm
N01S830BAT22ET	Onsemi	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	125 Cel		128KX8	128K		-40 Cel	TIN	DUAL		R-PDSO-G8	3	5.5 V	1.1 mm		3 mm		1048576 bit	2.5 V		e3	30	260			4.4 mm
N01S830HAT22ET	Onsemi	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	125 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	3	5.5 V	1.1 mm		3 mm		1048576 bit	2.5 V		e3	30	260			4.4 mm
N01S830HAT22E	Onsemi	STANDARD SRAM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	125 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	3	5.5 V	1.1 mm		3 mm		1048576 bit	2.5 V		e3	30	260			4.4 mm
CAT22C10LE20	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	18		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	64 words	COMMON	5		4					125 Cel	3-STATE	64X4	64	4.5 V	-40 Cel		DUAL	1	R-PDIP-T18		5.5 V				Not Qualified	256 bit	4.5 V					NO	.00003 Amp		200 ns
CAT22C10LE30	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	18		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	64 words	COMMON	5		4					125 Cel	3-STATE	64X4	64	4.5 V	-40 Cel		DUAL	1	R-PDIP-T18		5.5 V				Not Qualified	256 bit	4.5 V					NO	.00003 Amp		300 ns
CAT22C10WE-30	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			40 mA	64 words		5	5	4	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	125 Cel		64X4	64		-40 Cel		DUAL		R-PDSO-G16						Not Qualified								.00003 Amp		300 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.