AUTOMOTIVE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K6X8016T3B-TQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G44					Not Qualified	8388608 bit		e0			.00008 Amp		70 ns
K6X1008T2D-TQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V	e0				18.4 mm	70 ns
K6X4008T1F-BQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G32	1				Not Qualified	4194304 bit		e3			.00003 Amp		70 ns
K6X0808C1D-LQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE, THIN PROFILE			.55 mm	125 Cel		32KX8	32K		-40 Cel		DUAL	R-PDSO-G28	2	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V					11.8 mm	70 ns
K6X4016C3F-TQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	e0				18.41 mm	70 ns
K6X1008T2D-BQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON		3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit					.000025 Amp		70 ns
K6X4016C3F-TQ550	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V					18.41 mm	55 ns
K6X0808T1D-GQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE			1.27 mm	125 Cel		32KX8	32K		-40 Cel		DUAL	R-PDSO-G28		3.6 V	3 mm	8.38 mm	Not Qualified	262144 bit	2.7 V					18.29 mm	85 ns
K6X4008T1F-VQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	R-PDSO-G32	1				Not Qualified	4194304 bit					.00003 Amp		70 ns
K6X8008T2B-UQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	1MX8	1M	1.5 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	.00008 Amp	18.41 mm	70 ns
K6X4008C1F-GQ55	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V	e0			.00003 Amp	20.47 mm	55 ns
K6X0808T1D-GQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE			1.27 mm	125 Cel		32KX8	32K		-40 Cel		DUAL	R-PDSO-G28		3.6 V	3 mm	8.38 mm	Not Qualified	262144 bit	2.7 V					18.29 mm	70 ns
K6X1008T2D-GQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON		3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit					.000025 Amp		70 ns
K6X4008C1F-BQ550	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	.00003 Amp	20.47 mm	55 ns
K6X4008T1F-YQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	R-PDSO-G32	1	3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V				.00003 Amp	11.8 mm	70 ns
K6X4008T1F-BQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN BISMUTH	DUAL	R-PDSO-G32	3	3.6 V	3 mm	11.43 mm	Not Qualified	4194304 bit	2.7 V	e6			.00003 Amp	20.47 mm	70 ns
K6X0808T1D-YQ85	Samsung	STANDARD SRAM	AUTOMOTIVE	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	SRAMs	.55 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0					85 ns
K6X4008T1F-VQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	R-PDSO-G32	1	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V				.00003 Amp	20.95 mm	70 ns
K6X1008C2D-BQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	.000025 Amp	20.47 mm	70 ns
K6X8016C3B-TQ55	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	512KX16	512K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44					Not Qualified	8388608 bit		e0					55 ns
K6X1008T2D-TQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit					.000025 Amp		70 ns
K6X1008T2D-GQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32	1	3.6 V	3 mm	11.43 mm	Not Qualified	1048576 bit	2.7 V				.000025 Amp	20.47 mm	85 ns
K6X4008C1F-UQ55	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	4194304 bit					.00003 Amp		55 ns
K6X4008T1F-BQ85T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G32	1				Not Qualified	4194304 bit		e3			.00003 Amp		85 ns
K6X4008C1F-BQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	.00003 Amp	20.47 mm	70 ns
K6X0808C1D-GQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V	e0			.000025 Amp	18.29 mm	70 ns
K6X8008C2B-UQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		1MX8	1M		-40 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V					18.41 mm	70 ns
K6X4008C1F-GQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V	e0			.00003 Amp	20.47 mm	70 ns
K6X4008C1F-VQ55T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	4194304 bit					.00003 Amp		55 ns
K6X0808T1D-LQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	125 Cel		32KX8	32K		-40 Cel		DUAL	R-PDSO-G28		3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V					11.8 mm	85 ns
K6X0808T1D-BQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE			1.27 mm	125 Cel		32KX8	32K		-40 Cel		DUAL	R-PDSO-G28		3.6 V	3 mm	8.38 mm	Not Qualified	262144 bit	2.7 V					18.29 mm	70 ns
K6X4016C3F-RQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V					18.41 mm	70 ns
K6X4008T1F-GQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	4194304 bit	2.7 V	e0			.00003 Amp	20.47 mm	70 ns
K6X1008T2D-BQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN BISMUTH	DUAL	R-PDSO-G32	3	3.6 V	3 mm	11.43 mm	Not Qualified	1048576 bit	2.7 V	e6			.000025 Amp	20.47 mm	70 ns
K6X1008T2D-GQ85	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	1048576 bit	2.7 V	e0				20.47 mm	85 ns
K6X4016T3F-UQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	2.7 V	-40 Cel		DUAL	R-PDSO-G44					Not Qualified	4194304 bit					.0003 Amp		70 ns
K6X4008T1F-VQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	R-PDSO-G32	1	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V				.00003 Amp	20.95 mm	85 ns
K6X4016T3F-UQ85T	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	2.7 V	-40 Cel		DUAL	R-PDSO-G44					Not Qualified	4194304 bit					.0003 Amp		85 ns
K6X4016T3F-UQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	2.7 V	-40 Cel		DUAL	R-PDSO-G44					Not Qualified	4194304 bit					.0003 Amp		70 ns
K6X4008C1F-GQ55T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	4194304 bit					.00003 Amp		55 ns
K6X4016T3F-UQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	2.7 V	-40 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	18.41 mm	85 ns
K6X0808T1D-YQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	125 Cel		32KX8	32K		-40 Cel		DUAL	R-PDSO-G28		3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V					11.8 mm	70 ns
K6X8016T3B-TQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		DUAL	R-PDSO-G44	1				Not Qualified	8388608 bit					.00008 Amp		70 ns
K6X1008C2D-PQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	R-PDSO-G32					Not Qualified	1048576 bit					.000025 Amp		70 ns
K6X4016T3F-TQ85T	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	2.7 V	-40 Cel		DUAL	R-PDSO-G44					Not Qualified	4194304 bit					.0003 Amp		85 ns
K6X8008T2B-TQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	1MX8	1M	1.5 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G44					Not Qualified	8388608 bit		e0			.00001 Amp		70 ns
K6X8016T3B-UQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	MATTE TIN	DUAL	R-PDSO-G44	1				Not Qualified	8388608 bit		e3			.00008 Amp		70 ns
K6X8008C2B-TQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	1MX8	1M	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V	e0				18.41 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.