AUTOMOTIVE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K6X1008C2D-TQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0				.000025 Amp	18.4 mm	70 ns
K6X1008T2D-YQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	125 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V							11.8 mm	70 ns
K6X8016T3B-UQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	1				Not Qualified	8388608 bit			e3				.00008 Amp		70 ns
K6X4008C1F-BQ55T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32					Not Qualified	4194304 bit							.00003 Amp		55 ns
K6X0808T1D-YQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	125 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	2.7 V							11.8 mm	85 ns
K6X4008T1F-VQ85T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	1				Not Qualified	4194304 bit							.00003 Amp		85 ns
K6X0808C1D-GQ55	Samsung	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V		e0				.000025 Amp	18.29 mm	55 ns
K6X0808C1D-BQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.000025 Amp	18.29 mm	70 ns
K6X4016T3F-TQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	2.7 V	-40 Cel		DUAL		R-PDSO-G44					Not Qualified	4194304 bit							.0003 Amp		70 ns
K6X4008T1F-LQ85	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	1				Not Qualified	4194304 bit			e3				.00003 Amp		85 ns
K6X0808C1D-TQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDSO-G28	1	5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V						.000025 Amp	11.8 mm	70 ns
K6X8008T2B-UQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	1MX8	1M	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	1				Not Qualified	8388608 bit			e3				.00008 Amp		70 ns
K6X0808T1D-GQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON		3/3.3	8	SMALL OUTLINE	SOP28,.45	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G28					Not Qualified	262144 bit			e0						70 ns
K6T1008C2E-GQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32					Not Qualified	1048576 bit							.000025 Amp		70 ns
K6X1008T2D-TQ85	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.7 V		e0					18.4 mm	85 ns
K6X4008T1F-UQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN BISMUTH	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V		e6				.00003 Amp	20.95 mm	85 ns
K6X4008T1F-YQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	2.7 V		e0				.00003 Amp	11.8 mm	70 ns
K6X8008T2B-UQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	1MX8	1M	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	1				Not Qualified	8388608 bit			e3				.00008 Amp		70 ns
K6X4008C1F-GQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32					Not Qualified	4194304 bit							.00003 Amp		70 ns
MT5C6406EC-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0				.00025 Amp		30 ns
MT5C1606-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0				.003 Amp		30 ns
MT5C1M4B2TG-35PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		1MX4	1M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e3			YES		20.96 mm	35 ns
MT5C1605C-20LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	16384 bit			e0				.00025 Amp		20 ns
MT5C6401-35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	65536 bit			e0				.003 Amp		35 ns
MT5C2568DJ-25LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.66 mm	7.67 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.0005 Amp	18.44 mm	25 ns
MT5LC1005-25LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	3.3	4	IN-LINE	DIP28,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		3.6 V	4.32 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0			YES	.00005 Amp	35.05 mm	25 ns
MT5C1009-70AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32					Not Qualified	1048576 bit			e0				.005 Amp		70 ns
MT5LC1005SJ-45LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	2 V	-40 Cel		DUAL	1	R-PDSO-J28		3.6 V	3.66 mm	7.67 mm	Not Qualified	1048576 bit	3 V					YES		18.44 mm	45 ns
MT5C1008SJ-45AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32					Not Qualified	1048576 bit			e0				.007 Amp		45 ns
MT5C2564-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	262144 bit			e0				.007 Amp		25 ns
MT5C1608EC-20AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	16384 bit			e0				.003 Amp		20 ns
MT5LC1008SJ-25LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	125 Cel		128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-J32		3.6 V	3.66 mm	7.67 mm	Not Qualified	1048576 bit	3 V					YES		20.98 mm	25 ns
MT5C6404-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22					Not Qualified	65536 bit			e0				.005 Amp		30 ns
MT5LC256K4D4TG-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel		256KX4	256K	2 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e3			YES		20.95 mm
MT5C2568DJ-25LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.66 mm	7.67 mm	Not Qualified	262144 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS	e0			YES		18.44 mm	25 ns
MT5LC1008-45LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	COMMON	3.3	3.3	8	IN-LINE	DIP32,.4	SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		3.6 V	4.32 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0			YES		40.135 mm	45 ns
MT5C6407-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T28		5.5 V	4.32 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.00025 Amp	36.83 mm	35 ns
MT5C6405EC-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0				.00025 Amp		30 ns
MT5C1607C-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24					Not Qualified	16384 bit			e0				.003 Amp		30 ns
MT5C6401DJ-9LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		1	SMALL OUTLINE			1.27 mm	125 Cel		64KX1	64K		-40 Cel		DUAL		R-PDSO-J24		5.5 V	3.68 mm	7.67 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS						15.9 mm	9 ns
MT5C256K16B2DJ-35LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			.8 mm	125 Cel		256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J54		5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V		e0			YES		22.25 mm	35 ns
MT5C2568ECW-45LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N32					Not Qualified	262144 bit			e0				.0003 Amp		45 ns
MT5LC1005DJ-25LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE			1.27 mm	125 Cel		256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.68 mm	10.21 mm	Not Qualified	1048576 bit	3 V		e0			YES		18.44 mm	25 ns
MT5C6408ECW-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	SRAMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N32					Not Qualified	65536 bit			e0				.00025 Amp		15 ns
MT5LC2564DJ-25LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		3.63 V	3.61 mm	7.67 mm	Not Qualified	262144 bit	3 V		e0			NO	.00005 Amp	15.9 mm	25 ns
MT5C1005DJ-45AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	1048576 bit			e0				.007 Amp		45 ns
MT5C6405DJ-10LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm	7.67 mm	Not Qualified	65536 bit	4.5 V		e0			YES		15.9 mm	10 ns
MT5C2568Z-20AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE	ZIP28,.1	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28					Not Qualified	262144 bit			e0				.005 Amp		20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.