AUTOMOTIVE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY62147G30-55BVXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	125 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm		4194304 bit	2.2 V		e1		260			8 mm	55 ns
CY14B102N-BA20XAT	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL			90 mA	131072 words			3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	125 Cel		128KX16	128K		-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	2097152 bit					260		.005 Amp		20 ns
CY14B104NA-ZS25XET	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	3 V				260			18.415 mm	25 ns
CY62147G30-55ZSXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V		e4		260			18.415 mm	55 ns
CY7C1041G30-10ZSXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V		e4		260			18.415 mm	10 ns
CY62136FV30LL-55ZSXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000012 Amp	18.415 mm	55 ns
CY14B102N-ZS45XAT	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES				GULL WING			75 mA	131072 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel		128KX16	128K		-40 Cel		DUAL		R-PDSO-G44						Not Qualified	2097152 bit					260		.005 Amp		45 ns
CY62126EV30LL-55ZSXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	2.2 V		e4	20	260		.00003 Amp	18.415 mm	55 ns
CY14B101P-SFXET	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			15 mA	131072 words		3.3	3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	125 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G16						Not Qualified	1048576 bit							.01 Amp
CY62167G-55BVXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	125 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		5.5 V	1 mm		6 mm		16777216 bit	4.5 V							8 mm	55 ns
CY62167G30-45ZXAT	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP48,47,20		.5 mm	125 Cel	3-STATE	1MX16	1M	1 V	-40 Cel		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V					YES		18.4 mm	45 ns
CY62157EV30LL-55BVXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	125 Cel		512KX16	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	8388608 bit	2.2 V		e1	30	260			8 mm	55 ns
CY14B102N-ZSP20XAT	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES				GULL WING			90 mA	131072 words			3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	125 Cel		128KX16	128K		-40 Cel		DUAL		R-PDSO-G54						Not Qualified	2097152 bit					260		.005 Amp		20 ns
CY7C1020CV26-15ZSXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	32KX16	32K	2.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	2.7 V	1.194 mm		10.16 mm	Not Qualified	524288 bit	2.5 V		e4	20	260		.005 Amp	18.415 mm	15 ns
CY14B102L-ZSP20XAT	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	54	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES				GULL WING			90 mA	262144 words			3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	SRAMs	.8 mm	125 Cel		256KX8	256K		-40 Cel		DUAL		R-PDSO-G54						Not Qualified	2097152 bit					260		.005 Amp		20 ns
CY7C1061G30-10ZXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		.5 mm	125 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V					YES	.05 Amp	18.4 mm	10 ns
CY62157EV30LL-55ZXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	8388608 bit	2.2 V		e4	20	260	YES	.00003 Amp	18.4 mm	55 ns
CY7C1011G30-10BAJXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS		131072 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	125 Cel		128KX16	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm		2097152 bit	2.2 V		e1		260			8 mm	10 ns
CY7C1051DV33-15ZSXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	524288 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	512KX16	512K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	3 V		e4	30	260		.02 Amp	18.415 mm	15 ns
CY14B104NA-ZS45XET	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	3 V				260			18.415 mm	45 ns
CY7C1021CV26-15ZSXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	64KX16	64K	2.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	2.7 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	2.5 V		e4	20	260		.01 Amp	18.415 mm	15 ns
CY7C1361C-100AXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	180 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	125 Cel	3-STATE	256KX36	256K	3.135 V	-40 Cel	MATTE TIN	QUAD	1	R-PQFP-G100	3	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	40	260	YES	.06 Amp	20 mm	8.5 ns
CY14B104NA-ZS45XE	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel	PURE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	3 V				260			18.415 mm	45 ns
CY7C1061G30-10BV1XE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	125 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm		6 mm		16777216 bit	2.2 V		e1		260	YES	.05 Amp	8 mm	10 ns
CY62147G30-55ZSXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V		e4	30	260			18.415 mm	55 ns
CY7C1049CV33-15ZE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	95 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44						Not Qualified	4194304 bit			e0				.015 Amp		15 ns
CY7C1021CV26-15ZSXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	64KX16	64K	2.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	2.7 V	1.194 mm		10.16 mm	Not Qualified	1048576 bit	2.5 V		e4	20	260		.01 Amp	18.415 mm	15 ns
CY62147G230-55ZSXET	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.194 mm		10.16 mm		4194304 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.415 mm	55 ns
71256SA12SOG1	Renesas Electronics	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G28	1	5.5 V				Not Qualified	262144 bit	4.5 V		e3	30	260		.015 Amp		12 ns
IDT71256SA12SOG1	Renesas Electronics	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G28	1					Not Qualified	262144 bit			e3	30	260		.015 Amp		12 ns
K6X4016T3F-TQ85	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	2.7 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.0003 Amp	18.41 mm	85 ns
K6X8008T2B-TQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	1MX8	1M	1.5 V	-40 Cel		DUAL		R-PDSO-G44	1	3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	2.7 V						.00008 Amp	18.41 mm	70 ns
K6X0808C1D-GQ550	Samsung	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	3 mm		8.38 mm	Not Qualified	262144 bit	4.5 V							18.29 mm	55 ns
K6X1008T2D-TQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32	1	3.6 V	1.2 mm		8 mm	Not Qualified	1048576 bit	2.7 V						.000025 Amp	18.4 mm	70 ns
K6X4016T3F-TQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	256KX16	256K	2.7 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V		e0				.0003 Amp	18.41 mm	70 ns
K6T1008C2E-GQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V						.000025 Amp	20.47 mm	70 ns
K6X4008C1F-BQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	4194304 bit							.00003 Amp		70 ns
K6X4008T1F-GQ85	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		3.6 V	3 mm		11.43 mm	Not Qualified	4194304 bit	2.7 V		e0				.00003 Amp	20.47 mm	85 ns
K6X1008T2D-PQ85	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	1048576 bit							.000025 Amp		85 ns
K6X1008C2D-PQ70	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	1048576 bit							.000025 Amp		70 ns
K6X4008T1F-YQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32	1	3.6 V	1.2 mm		8 mm	Not Qualified	4194304 bit	2.7 V						.00003 Amp	11.8 mm	85 ns
K6X0808T1D-BQ850	Samsung	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3		8	SMALL OUTLINE			1.27 mm	125 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		3.6 V	3 mm		8.38 mm	Not Qualified	262144 bit	2.7 V							18.29 mm	85 ns
K6X1008T2D-GQ700	Samsung	STANDARD SRAM	AUTOMOTIVE	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32	1	3.6 V	3 mm		11.43 mm	Not Qualified	1048576 bit	2.7 V						.000025 Amp	20.47 mm	70 ns
K6X8008T2B-TQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel	3-STATE	1MX8	1M	1.5 V	-40 Cel		DUAL		R-PDSO-G44	1					Not Qualified	8388608 bit							.00008 Amp		70 ns
K6X1008C2D-TQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-G32						Not Qualified	1048576 bit							.000025 Amp		70 ns
K6X1008C2D-TQ55	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	55 ns
K6X4008T1F-LQ70T	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	1					Not Qualified	4194304 bit			e3				.00003 Amp		70 ns
K6X4008C1F-UQ550	Samsung	STANDARD SRAM	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		.00003 Amp	20.95 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.