Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
16 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
256 bit |
4.5 V |
e0 |
30 |
240 |
4.9 mm |
375 ns |
||||||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
3 mA |
16 words |
5 |
5 |
16 |
IN-LINE |
DIP8,.3 |
SRAMs |
2.54 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
DUAL |
R-PDIP-T8 |
5.5 V |
5.33 mm |
7.62 mm |
Not Qualified |
256 bit |
4.5 V |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
.00003 Amp |
9.27 mm |
375 ns |
|||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
16 words |
5 |
16 |
IN-LINE |
2.54 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T8 |
5.5 V |
5.33 mm |
7.62 mm |
Not Qualified |
256 bit |
4.5 V |
e4 |
9.27 mm |
375 ns |
|||||||||||||||||||||||
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
64 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
64X4 |
64 |
-40 Cel |
DUAL |
R-PDIP-T18 |
5.5 V |
4.57 mm |
7.62 mm |
Not Qualified |
256 bit |
4.5 V |
22.73 mm |
300 ns |
||||||||||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
3 mA |
16 words |
5 |
5 |
16 |
SMALL OUTLINE |
SOP8,.25 |
SRAMs |
1.27 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G8 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
256 bit |
4.5 V |
e4 |
.00003 Amp |
4.9 mm |
375 ns |
||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
40 mA |
64 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOP16,.4 |
SRAMs |
1.27 mm |
125 Cel |
64X4 |
64 |
-40 Cel |
DUAL |
R-PDSO-G16 |
Not Qualified |
.00003 Amp |
200 ns |
|||||||||||||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
16 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
256 bit |
4.5 V |
e4 |
4.9 mm |
375 ns |
|||||||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
16 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
256 bit |
4.5 V |
e3 |
4.9 mm |
375 ns |
|||||||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
3 mA |
16 words |
5 |
5 |
16 |
SMALL OUTLINE |
SOP8,.25 |
SRAMs |
1.27 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
DUAL |
R-PDSO-G8 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
256 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00003 Amp |
4.9 mm |
|||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
16 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
64 words |
COMMON |
5 |
4 |
125 Cel |
3-STATE |
64X4 |
64 |
4.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G16 |
5.5 V |
Not Qualified |
256 bit |
4.5 V |
NO |
.00003 Amp |
300 ns |
||||||||||||||||||||||||
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
16 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
256 bit |
4.5 V |
e4 |
4.9 mm |
375 ns |
||||||||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
3 mA |
16 words |
5 |
5 |
16 |
SMALL OUTLINE |
SOP8,.25 |
SRAMs |
1.27 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
DUAL |
R-PDSO-G8 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
256 bit |
4.5 V |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
.00003 Amp |
4.9 mm |
||||||||||||||||||
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
16 words |
5 |
16 |
IN-LINE |
2.54 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T8 |
5.5 V |
4.57 mm |
7.62 mm |
Not Qualified |
256 bit |
4.5 V |
e0 |
9.59 mm |
375 ns |
||||||||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
16 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
256 bit |
4.5 V |
e4 |
4.9 mm |
375 ns |
|||||||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
3 mA |
16 words |
5 |
5 |
16 |
SMALL OUTLINE |
SOP8,.25 |
SRAMs |
1.27 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G8 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
256 bit |
4.5 V |
e3 |
.00003 Amp |
4.9 mm |
375 ns |
||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
3 mA |
16 words |
5 |
5 |
16 |
IN-LINE |
DIP8,.3 |
SRAMs |
2.54 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
DUAL |
R-PDIP-T8 |
5.5 V |
5.33 mm |
7.62 mm |
Not Qualified |
256 bit |
4.5 V |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
.00003 Amp |
9.27 mm |
375 ns |
|||||||||||||||||
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
16 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
16X16 |
16 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
256 bit |
4.5 V |
e0 |
30 |
240 |
4.9 mm |
375 ns |
||||||||||||||||||||||
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
64 words |
5 |
4 |
IN-LINE |
2.54 mm |
125 Cel |
64X4 |
64 |
-40 Cel |
DUAL |
R-PDIP-T18 |
5.5 V |
4.57 mm |
7.62 mm |
Not Qualified |
256 bit |
4.5 V |
22.73 mm |
200 ns |
||||||||||||||||||||||||||
|
Onsemi |
NON-VOLATILE SRAM |
AUTOMOTIVE |
16 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
64 words |
COMMON |
5 |
4 |
125 Cel |
3-STATE |
64X4 |
64 |
4.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G16 |
5.5 V |
Not Qualified |
256 bit |
4.5 V |
NO |
.00003 Amp |
200 ns |
||||||||||||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
AUTOMOTIVE |
44 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOP44,.5,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
8KX16 |
8K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G44 |
3.6 V |
3.05 mm |
8.23 mm |
Not Qualified |
131072 bit |
3 V |
IT ALSO OPERATES AT 2.6V |
e3 |
.001 Amp |
17.71 mm |
36 ns |
||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
AUTOMOTIVE |
44 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOP44,.5,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
8KX16 |
8K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G44 |
3.6 V |
3.05 mm |
8.23 mm |
Not Qualified |
131072 bit |
3 V |
IT ALSO OPERATES AT 2.6V |
e3 |
.001 Amp |
17.71 mm |
36 ns |
||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
AUTOMOTIVE |
44 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOP44,.5,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
8KX16 |
8K |
3 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3.6 V |
3.05 mm |
8.23 mm |
Not Qualified |
131072 bit |
3 V |
IT ALSO OPERATES AT 2.6V |
e0 |
.001 Amp |
17.71 mm |
36 ns |
||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
AUTOMOTIVE |
44 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE |
SOP44,.5,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
8KX16 |
8K |
3 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3.6 V |
3.05 mm |
8.23 mm |
Not Qualified |
131072 bit |
3 V |
IT ALSO OPERATES AT 2.6V |
e0 |
.001 Amp |
17.71 mm |
36 ns |
||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDSO-G16 |
1 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
e4 |
NO |
9.9 mm |
60 ns |
|||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
2/6 |
4 |
SMALL OUTLINE, SHRINK PITCH |
SSOP16,.3 |
Other Memory ICs |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G16 |
1 |
6 V |
2 mm |
5.3 mm |
Not Qualified |
16 bit |
2 V |
e4 |
30 |
260 |
6.2 mm |
59 ns |
|||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
1.1 mm |
4.4 mm |
Not Qualified |
16 bit |
4.5 V |
5 mm |
60 ns |
||||||||||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
1 |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
2 V |
e4 |
30 |
260 |
NO |
9.9 mm |
59 ns |
||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
Other Memory ICs |
2.54 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDIP-T16 |
5.5 V |
4.7 mm |
7.62 mm |
Not Qualified |
16 bit |
4.5 V |
e4 |
NO |
21.6 mm |
60 ns |
|||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE, SHRINK PITCH |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
6 V |
2 mm |
5.3 mm |
Not Qualified |
16 bit |
2 V |
e4 |
6.2 mm |
59 ns |
||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
DUAL |
R-PDSO-G16 |
6 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
2 V |
9.9 mm |
59 ns |
||||||||||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE, SHRINK PITCH |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
5.5 V |
2 mm |
5.3 mm |
Not Qualified |
16 bit |
4.5 V |
e4 |
6.2 mm |
60 ns |
||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
IN-LINE |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
DUAL |
1 |
R-PDIP-T16 |
6 V |
Not Qualified |
16 bit |
2 V |
NO |
59 ns |
|||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
22 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
5 |
9 |
IN-LINE |
DIP22,.4 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
256X9 |
256 |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T22 |
Not Qualified |
e0 |
70 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
DUAL |
R-PDSO-G16 |
5.5 V |
1.1 mm |
4.4 mm |
Not Qualified |
16 bit |
4.5 V |
5 mm |
60 ns |
||||||||||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
Other Memory ICs |
2.54 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDIP-T16 |
5.5 V |
4.7 mm |
7.62 mm |
Not Qualified |
16 bit |
4.5 V |
e4 |
NO |
21.6 mm |
60 ns |
|||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE, SHRINK PITCH |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
5.5 V |
2 mm |
5.3 mm |
Not Qualified |
16 bit |
4.5 V |
e4 |
6.2 mm |
60 ns |
||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
DUAL |
R-PDSO-G16 |
6 V |
1.1 mm |
4.4 mm |
Not Qualified |
16 bit |
2 V |
5 mm |
59 ns |
||||||||||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
IN-LINE |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
DUAL |
1 |
R-PDIP-T16 |
5.5 V |
Not Qualified |
16 bit |
4.5 V |
NO |
60 ns |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
2/6 |
4 |
SMALL OUTLINE, SHRINK PITCH |
SSOP16,.3 |
Other Memory ICs |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
6 V |
2 mm |
5.3 mm |
Not Qualified |
16 bit |
2 V |
e4 |
6.2 mm |
59 ns |
|||||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
22 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
5 |
9 |
IN-LINE |
DIP22,.4 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
256X9 |
256 |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T22 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDSO-G16 |
1 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
e4 |
NO |
9.9 mm |
60 ns |
|||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE, SHRINK PITCH |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G16 |
1 |
6 V |
2 mm |
5.3 mm |
Not Qualified |
16 bit |
2 V |
e4 |
6.2 mm |
59 ns |
||||||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
2/6 |
4 |
IN-LINE |
DIP16,.3 |
Other Memory ICs |
2.54 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDIP-T16 |
6 V |
4.7 mm |
7.62 mm |
Not Qualified |
16 bit |
2 V |
e4 |
NO |
21.6 mm |
59 ns |
|||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
2/6 |
4 |
IN-LINE |
DIP16,.3 |
Other Memory ICs |
2.54 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDIP-T16 |
6 V |
4.7 mm |
7.62 mm |
Not Qualified |
16 bit |
2 V |
e4 |
NO |
21.6 mm |
59 ns |
|||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
1 |
R-PDSO-G16 |
1 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
4.5 V |
e4 |
30 |
260 |
NO |
9.9 mm |
60 ns |
||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
1 |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
2 V |
e4 |
30 |
260 |
NO |
9.9 mm |
59 ns |
|||||||||||||||||
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
4 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.65 mm |
125 Cel |
4X4 |
4 |
-40 Cel |
DUAL |
R-PDSO-G16 |
6 V |
1.1 mm |
4.4 mm |
Not Qualified |
16 bit |
2 V |
5 mm |
59 ns |
||||||||||||||||||||||||||
|
NXP Semiconductors |
STANDARD SRAM |
AUTOMOTIVE |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.25 |
Other Memory ICs |
1.27 mm |
125 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDSO-G16 |
1 |
6 V |
1.75 mm |
3.9 mm |
Not Qualified |
16 bit |
2 V |
e4 |
NO |
9.9 mm |
59 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.