AUTOMOTIVE SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CAT24C44SE

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

16 words

5

16

SMALL OUTLINE

1.27 mm

125 Cel

16X16

16

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

Not Qualified

256 bit

4.5 V

e0

30

240

4.9 mm

375 ns

CAT24C44LE-G

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

3 mA

16 words

5

5

16

IN-LINE

DIP8,.3

SRAMs

2.54 mm

125 Cel

16X16

16

-40 Cel

DUAL

R-PDIP-T8

5.5 V

5.33 mm

7.62 mm

Not Qualified

256 bit

4.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

.00003 Amp

9.27 mm

375 ns

CAT24C44GLE

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

16 words

5

16

IN-LINE

2.54 mm

125 Cel

16X16

16

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDIP-T8

5.5 V

5.33 mm

7.62 mm

Not Qualified

256 bit

4.5 V

e4

9.27 mm

375 ns

CAT22C10LE-30T1

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

5

4

IN-LINE

2.54 mm

125 Cel

64X4

64

-40 Cel

DUAL

R-PDIP-T18

5.5 V

4.57 mm

7.62 mm

Not Qualified

256 bit

4.5 V

22.73 mm

300 ns

CAT24C44VE-G

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16 words

5

5

16

SMALL OUTLINE

SOP8,.25

SRAMs

1.27 mm

125 Cel

16X16

16

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

Not Qualified

256 bit

4.5 V

e4

.00003 Amp

4.9 mm

375 ns

CAT22C10WE-20

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

40 mA

64 words

5

5

4

SMALL OUTLINE

SOP16,.4

SRAMs

1.27 mm

125 Cel

64X4

64

-40 Cel

DUAL

R-PDSO-G16

Not Qualified

.00003 Amp

200 ns

CAT24C44GVE-TE13

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

16 words

5

16

SMALL OUTLINE

1.27 mm

125 Cel

16X16

16

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

Not Qualified

256 bit

4.5 V

e4

4.9 mm

375 ns

CAT24C44VE-TE13

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

16 words

5

16

SMALL OUTLINE

1.27 mm

125 Cel

16X16

16

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

Not Qualified

256 bit

4.5 V

e3

4.9 mm

375 ns

CAT24C44VE-T3

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16 words

5

5

16

SMALL OUTLINE

SOP8,.25

SRAMs

1.27 mm

125 Cel

16X16

16

-40 Cel

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

Not Qualified

256 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.00003 Amp

4.9 mm

CAT22C10WE-30-T1

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

16

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

64 words

COMMON

5

4

125 Cel

3-STATE

64X4

64

4.5 V

-40 Cel

DUAL

1

R-PDSO-G16

5.5 V

Not Qualified

256 bit

4.5 V

NO

.00003 Amp

300 ns

CAT24C44VE-GTE13

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

16 words

5

16

SMALL OUTLINE

1.27 mm

125 Cel

16X16

16

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

Not Qualified

256 bit

4.5 V

e4

4.9 mm

375 ns

CAT24C44VE-GT3

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16 words

5

5

16

SMALL OUTLINE

SOP8,.25

SRAMs

1.27 mm

125 Cel

16X16

16

-40 Cel

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

Not Qualified

256 bit

4.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

.00003 Amp

4.9 mm

CAT24C44PE

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

16 words

5

16

IN-LINE

2.54 mm

125 Cel

16X16

16

-40 Cel

TIN LEAD

DUAL

R-PDIP-T8

5.5 V

4.57 mm

7.62 mm

Not Qualified

256 bit

4.5 V

e0

9.59 mm

375 ns

CAT24C44GVE

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

16 words

5

16

SMALL OUTLINE

1.27 mm

125 Cel

16X16

16

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

Not Qualified

256 bit

4.5 V

e4

4.9 mm

375 ns

CAT24C44VE

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16 words

5

5

16

SMALL OUTLINE

SOP8,.25

SRAMs

1.27 mm

125 Cel

16X16

16

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

Not Qualified

256 bit

4.5 V

e3

.00003 Amp

4.9 mm

375 ns

CAT24C44LE

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

3 mA

16 words

5

5

16

IN-LINE

DIP8,.3

SRAMs

2.54 mm

125 Cel

16X16

16

-40 Cel

DUAL

R-PDIP-T8

5.5 V

5.33 mm

7.62 mm

Not Qualified

256 bit

4.5 V

e3

NOT SPECIFIED

NOT SPECIFIED

.00003 Amp

9.27 mm

375 ns

CAT24C44SE-TE13

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

16 words

5

16

SMALL OUTLINE

1.27 mm

125 Cel

16X16

16

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

Not Qualified

256 bit

4.5 V

e0

30

240

4.9 mm

375 ns

CAT22C10LE-20T1

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

5

4

IN-LINE

2.54 mm

125 Cel

64X4

64

-40 Cel

DUAL

R-PDIP-T18

5.5 V

4.57 mm

7.62 mm

Not Qualified

256 bit

4.5 V

22.73 mm

200 ns

CAT22C10WE-20-T1

Onsemi

NON-VOLATILE SRAM

AUTOMOTIVE

16

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

64 words

COMMON

5

4

125 Cel

3-STATE

64X4

64

4.5 V

-40 Cel

DUAL

1

R-PDSO-G16

5.5 V

Not Qualified

256 bit

4.5 V

NO

.00003 Amp

200 ns

M616Z08-20MH3F

STMicroelectronics

STANDARD SRAM

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

75 mA

8192 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOP44,.5,32

SRAMs

.8 mm

125 Cel

3-STATE

8KX16

8K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G44

3.6 V

3.05 mm

8.23 mm

Not Qualified

131072 bit

3 V

IT ALSO OPERATES AT 2.6V

e3

.001 Amp

17.71 mm

36 ns

M616Z08-20MH3E

STMicroelectronics

STANDARD SRAM

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

75 mA

8192 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOP44,.5,32

SRAMs

.8 mm

125 Cel

3-STATE

8KX16

8K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G44

3.6 V

3.05 mm

8.23 mm

Not Qualified

131072 bit

3 V

IT ALSO OPERATES AT 2.6V

e3

.001 Amp

17.71 mm

36 ns

M616Z08-20MH3

STMicroelectronics

STANDARD SRAM

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

75 mA

8192 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOP44,.5,32

SRAMs

.8 mm

125 Cel

3-STATE

8KX16

8K

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

3.05 mm

8.23 mm

Not Qualified

131072 bit

3 V

IT ALSO OPERATES AT 2.6V

e0

.001 Amp

17.71 mm

36 ns

M616Z08-20MH3TR

STMicroelectronics

STANDARD SRAM

AUTOMOTIVE

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

75 mA

8192 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOP44,.5,32

SRAMs

.8 mm

125 Cel

3-STATE

8KX16

8K

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

3.05 mm

8.23 mm

Not Qualified

131072 bit

3 V

IT ALSO OPERATES AT 2.6V

e0

.001 Amp

17.71 mm

36 ns

74HCT670D-T

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

3-STATE

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-G16

1

5.5 V

1.75 mm

3.9 mm

Not Qualified

16 bit

4.5 V

e4

NO

9.9 mm

60 ns

74HC670DB

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

2/6

4

SMALL OUTLINE, SHRINK PITCH

SSOP16,.3

Other Memory ICs

.65 mm

125 Cel

4X4

4

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G16

1

6 V

2 mm

5.3 mm

Not Qualified

16 bit

2 V

e4

30

260

6.2 mm

59 ns

74HCT670PW-T

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

5.5 V

1.1 mm

4.4 mm

Not Qualified

16 bit

4.5 V

5 mm

60 ns

74HC670D

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

2/6

4

SMALL OUTLINE

SOP16,.25

Other Memory ICs

1.27 mm

125 Cel

3-STATE

4X4

4

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

1

R-PDSO-G16

1

6 V

1.75 mm

3.9 mm

Not Qualified

16 bit

2 V

e4

30

260

NO

9.9 mm

59 ns

74HCT670N

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

5

5

4

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

125 Cel

3-STATE

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDIP-T16

5.5 V

4.7 mm

7.62 mm

Not Qualified

16 bit

4.5 V

e4

NO

21.6 mm

60 ns

74HC670DB,118

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE, SHRINK PITCH

.65 mm

125 Cel

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G16

1

6 V

2 mm

5.3 mm

Not Qualified

16 bit

2 V

e4

6.2 mm

59 ns

74HC670D/T3

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

6 V

1.75 mm

3.9 mm

Not Qualified

16 bit

2 V

9.9 mm

59 ns

74HCT670DB-T

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE, SHRINK PITCH

.65 mm

125 Cel

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G16

1

5.5 V

2 mm

5.3 mm

Not Qualified

16 bit

4.5 V

e4

6.2 mm

60 ns

74HC670NB

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

5

4

IN-LINE

125 Cel

3-STATE

4X4

4

-40 Cel

DUAL

1

R-PDIP-T16

6 V

Not Qualified

16 bit

2 V

NO

59 ns

82S212/BWA-40

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

22

DIP

RECTANGULAR

CERAMIC

NO

TTL

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

5

5

9

IN-LINE

DIP22,.4

SRAMs

2.54 mm

125 Cel

3-STATE

256X9

256

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T22

Not Qualified

e0

70 ns

74HCT670PW

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

5.5 V

1.1 mm

4.4 mm

Not Qualified

16 bit

4.5 V

5 mm

60 ns

74HCT670N,652

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

5

5

4

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

125 Cel

3-STATE

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDIP-T16

5.5 V

4.7 mm

7.62 mm

Not Qualified

16 bit

4.5 V

e4

NO

21.6 mm

60 ns

74HCT670DB,118

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE, SHRINK PITCH

.65 mm

125 Cel

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G16

1

5.5 V

2 mm

5.3 mm

Not Qualified

16 bit

4.5 V

e4

6.2 mm

60 ns

74HC670PW

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

6 V

1.1 mm

4.4 mm

Not Qualified

16 bit

2 V

5 mm

59 ns

74HCT670NB

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

5

4

IN-LINE

125 Cel

3-STATE

4X4

4

-40 Cel

DUAL

1

R-PDIP-T16

5.5 V

Not Qualified

16 bit

4.5 V

NO

60 ns

74HC670DB,112

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

2/6

4

SMALL OUTLINE, SHRINK PITCH

SSOP16,.3

Other Memory ICs

.65 mm

125 Cel

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G16

1

6 V

2 mm

5.3 mm

Not Qualified

16 bit

2 V

e4

6.2 mm

59 ns

82S212/BWA

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

22

DIP

RECTANGULAR

CERAMIC

NO

TTL

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

5

5

9

IN-LINE

DIP22,.4

SRAMs

2.54 mm

125 Cel

3-STATE

256X9

256

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T22

Not Qualified

e0

74HCT670D,653

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

3-STATE

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-G16

1

5.5 V

1.75 mm

3.9 mm

Not Qualified

16 bit

4.5 V

e4

NO

9.9 mm

60 ns

74HC670DB-T

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE, SHRINK PITCH

.65 mm

125 Cel

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G16

1

6 V

2 mm

5.3 mm

Not Qualified

16 bit

2 V

e4

6.2 mm

59 ns

74HC670N,652

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

5

2/6

4

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

125 Cel

3-STATE

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDIP-T16

6 V

4.7 mm

7.62 mm

Not Qualified

16 bit

2 V

e4

NO

21.6 mm

59 ns

74HC670N

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

5

2/6

4

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

125 Cel

3-STATE

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDIP-T16

6 V

4.7 mm

7.62 mm

Not Qualified

16 bit

2 V

e4

NO

21.6 mm

59 ns

74HCT670D

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

5

4

SMALL OUTLINE

SOP16,.25

Other Memory ICs

1.27 mm

125 Cel

3-STATE

4X4

4

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

1

R-PDSO-G16

1

5.5 V

1.75 mm

3.9 mm

Not Qualified

16 bit

4.5 V

e4

30

260

NO

9.9 mm

60 ns

74HC670D,653

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

3-STATE

4X4

4

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

1

R-PDSO-G16

1

6 V

1.75 mm

3.9 mm

Not Qualified

16 bit

2 V

e4

30

260

NO

9.9 mm

59 ns

74HC670PW-T

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

6 V

1.1 mm

4.4 mm

Not Qualified

16 bit

2 V

5 mm

59 ns

74HC670D,652

NXP Semiconductors

STANDARD SRAM

AUTOMOTIVE

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

2/6

4

SMALL OUTLINE

SOP16,.25

Other Memory ICs

1.27 mm

125 Cel

3-STATE

4X4

4

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-G16

1

6 V

1.75 mm

3.9 mm

Not Qualified

16 bit

2 V

e4

NO

9.9 mm

59 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.