AUTOMOTIVE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MT5C1001DJ-15LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	1MX1	1M	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.68 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V		e0	NO		18.44 mm	15 ns
MT5C1601DJ-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	185 mA	16384 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	125 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	16384 bit	4.5 V		e0	NO	.0003 Amp	15.9 mm	12 ns
MT5C2565-10AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	262144 bit			e0		.005 Amp		10 ns
MT5C1606EC-35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55		SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28				Not Qualified	16384 bit			e0		.003 Amp		35 ns
MT5C6401-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3		SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0		.005 Amp		25 ns
MT5C2564DJ-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.68 mm	7.67 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.0005 Amp	15.9 mm	12 ns
MT5C6408-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0		.005 Amp		25 ns
TTS92256G-25C-12	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel		QUAD		R-XQCC-N32				Not Qualified	262144 bit					.008 Amp		25 ns
MT5C2568-15AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	175 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	262144 bit			e0		.007 Amp		15 ns
MT5C6407C-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28				Not Qualified	65536 bit			e0		.00025 Amp		35 ns
MT5C1008-35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.4		SRAMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32				Not Qualified	1048576 bit			e0		.007 Amp		35 ns
MT5C1607C-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3		SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24				Not Qualified	16384 bit			e0		.00025 Amp		30 ns
MT5C2568DJ-10AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	262144 bit			e0		.005 Amp		10 ns
MT5C512K8B2DJ-20PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE				1.27 mm	125 Cel		512KX8	512K		-40 Cel		DUAL	1	R-PDSO-J36	5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V			YES		23.52 mm	20 ns
MT5C2564DJ-35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	135 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	125 Cel	3-STATE	64KX4	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24				Not Qualified	262144 bit			e0		.007 Amp		35 ns
MT5LC1005-20LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	55 mA	262144 words	COMMON	3.3	3.3	4	IN-LINE	DIP28,.4		SRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	3.6 V	4.32 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e0	YES	.00005 Amp	35.05 mm	20 ns
MT5C1606DJ-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	4096 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	16384 bit	4.5 V		e0	NO	.00025 Amp	15.9 mm	35 ns
MT5C6406DJ-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm	7.67 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.00025 Amp	18.44 mm	12 ns
MT5C6407C-20LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28				Not Qualified	65536 bit			e0		.00025 Amp		20 ns
MT5C1608DJ-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	16384 bit	4.5 V		e0	YES	.00025 Amp	15.9 mm	35 ns
MT5LC2564-15PAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	IN-LINE				2.54 mm	125 Cel		64KX4	64K		-40 Cel		DUAL	1	R-PDIP-T24	3.6 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	3 V			NO		31.495 mm
MT5C2568ECW-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N32				Not Qualified	262144 bit			e0		.0003 Amp		30 ns
MT5LC2568Z-15AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	55 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE	ZIP28,.1		SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T28				Not Qualified	262144 bit			e0		.0003 Amp		15 ns
MT5C6401-9LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		1	IN-LINE				2.54 mm	125 Cel		64KX1	64K		-40 Cel		DUAL		R-PDIP-T22	5.5 V	4.32 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	TTL-COMPATIBLE INPUTS & OUTPUTS				26.165 mm	9 ns
MT5LC1001SJ-35LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE				1.27 mm	125 Cel		1MX1	1M	2 V	-40 Cel		DUAL	1	R-PDSO-J28	3.6 V	3.66 mm	7.67 mm	Not Qualified	1048576 bit	3 V			NO		18.44 mm	35 ns
MT5C4116DJ-15LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE		16		1.27 mm	125 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J44	5.5 V	3.76 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V		e0	YES		28.6 mm	15 ns
MT5C1005DJ-45LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	110 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44		SRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.68 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V		e0	YES	.00015 Amp	18.44 mm	45 ns
MT5LC2565DJ-20LPATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		3.3		4	SMALL OUTLINE				1.27 mm	125 Cel		64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3.63 V	3.66 mm	7.67 mm	Not Qualified	262144 bit	3 V		e0	YES		18.44 mm	20 ns
MT5LC2568DJ-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	262144 bit			e0		.0003 Amp		25 ns
MT5LC2561DJ-20LPATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		1	SMALL OUTLINE				1.27 mm	125 Cel		256KX1	256K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	3.63 V	3.61 mm	7.67 mm	Not Qualified	262144 bit	3 V		e0	NO		15.9 mm	20 ns
MT5C2565-10LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE				2.54 mm	125 Cel		64KX4	64K	2 V	-40 Cel		DUAL	1	R-PDIP-T28	5.5 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	4.5 V			YES		36.83 mm	10 ns
MT5C2565DJ-35LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		4	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	64KX4	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	5.5 V	3.66 mm	7.67 mm	Not Qualified	262144 bit	4.5 V		e0	YES		18.44 mm	35 ns
MT5C1009DJ-35LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.5 V	3.68 mm	10.21 mm	Not Qualified	1048576 bit	4.5 V	AUTOMATIC POWER-DOWN	e0	YES		20.98 mm	35 ns
MT5C6401DJ-8LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	65536 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	125 Cel	3-STATE	64KX1	64K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	65536 bit	4.5 V		e0	NO	.00025 Amp	15.9 mm	8 ns
MT5C6401-20AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	65536 words	SEPARATE	5	5	1	IN-LINE	DIP22,.3		SRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T22				Not Qualified	65536 bit			e0		.005 Amp		20 ns
MT5C1005-25AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP28,.4		SRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	1048576 bit			e0		.007 Amp		25 ns
MT5C256K16B2DJ-12LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	54	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE				.8 mm	125 Cel		256KX16	256K	2 V	-40 Cel		DUAL	1	R-PDSO-J54	5.5 V	3.81 mm	10.21 mm	Not Qualified	4194304 bit	4.5 V			YES		22.25 mm	12 ns
MT5C2561DJ-20PATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	256KX1	256K		-40 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.68 mm	7.67 mm	Not Qualified	262144 bit	4.5 V			NO		15.9 mm	20 ns
MT5C6406-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28				Not Qualified	65536 bit			e0		.005 Amp		30 ns
MT5C1601DJ-12LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	16KX1	16K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	16384 bit	4.5 V		e0	NO		15.9 mm	12 ns
MT5C1604DJ-20LATTR	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		4	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.61 mm	7.67 mm	Not Qualified	16384 bit	4.5 V		e0	NO		15.9 mm	20 ns
MT5C2568DJ-12AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS	195 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28				Not Qualified	262144 bit			e0		.007 Amp		12 ns
MT5LC1M4C3DJ35AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32				Not Qualified	4194304 bit			e0				35 ns
MT5C1605EC-15LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	22	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	135 mA	4096 words	COMMON	5	5	4	CHIP CARRIER	LCC22,.3X.5		SRAMs	1.27 mm	125 Cel	3-STATE	4KX4	4K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N22				Not Qualified	16384 bit			e0		.00025 Amp		15 ns
MT5LC256K4D4DJ-25LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		4	SMALL OUTLINE				1.27 mm	125 Cel		256KX4	256K	2 V	-40 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.68 mm	10.16 mm	Not Qualified	1048576 bit	3 V			YES		20.98 mm
MT5C2568-20LPAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.32 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0	YES	.0005 Amp	36.83 mm	20 ns
MT5C6406EC-30LAT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	110 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55		SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28				Not Qualified	65536 bit			e0		.00025 Amp		30 ns
MT5C1606-30AT	Micron Technology	STANDARD SRAM	AUTOMOTIVE	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	4096 words	SEPARATE	5	5	4	IN-LINE	DIP24,.3		SRAMs	2.54 mm	125 Cel	3-STATE	4KX4	4K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24				Not Qualified	16384 bit			e0		.003 Amp		30 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.