COMMERCIAL SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
DS1220Y-200	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6		SRAMs	2.54 mm	70 Cel		2KX8	2K		TIN LEAD	DUAL		R-XDMA-P24		5.5 V				Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e0				.004 Amp		200 ns
DS1220Y-200+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6		SRAMs	2.54 mm	70 Cel		2KX8	2K		MATTE TIN	DUAL		R-XDMA-P24		5.5 V				Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION	e3				.004 Amp		200 ns
7008L15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	325 mA	65536 words	COMMON	5	5	8	FLATPACK	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	64KX8	64K	4.5 V	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V				Not Qualified	524288 bit	4.5 V		e3	30	260		.005 Amp		15 ns
7028L15PFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	340 mA	65536 words	COMMON	5		16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20			.5 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	Matte Tin (Sn)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	1048576 bit	4.5 V		e3	NOT SPECIFIED	260	YES	.003 Amp	14 mm	15 ns
7028L15PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	340 mA	65536 words	COMMON	5		16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20			.5 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	Matte Tin (Sn)	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	1048576 bit	4.5 V		e3	NOT SPECIFIED	260	YES	.003 Amp	14 mm	15 ns
74F189PC	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words		5		4	IN-LINE				2.54 mm	70 Cel		16X4	16			DUAL		R-PDIP-T16		5.5 V	5.08 mm		7.62 mm		64 bit	4.5 V							19.305 mm	27 ns
CY7C1021BN-15VC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	TIN LEAD	DUAL		R-PDSO-J44	1	5.5 V	3.7592 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.01 Amp	28.575 mm	15 ns
CY7C1049CV33-12VC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	TIN LEAD	DUAL		R-PDSO-J36		3.6 V	3.683 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0				.01 Amp	23.495 mm	12 ns
STK14C88-NF25	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	97 mA	32768 words		5	5	8	SMALL OUTLINE	SOP32,.4		SRAMs	1.27 mm	70 Cel		32KX8	32K		Matte Tin (Sn)	DUAL		R-PDSO-G32	3	5.5 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3	20	260		.0015 Amp	20.726 mm	25 ns
X24C44P	Xicor	NON-VOLATILE SRAM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	16 words		5	5	16	IN-LINE	DIP8,.3		SRAMs	2.54 mm	70 Cel	3-STATE	16X16	16		TIN LEAD	DUAL	1	R-PDIP-T8		5.5 V	4.07 mm		7.62 mm	Not Qualified	256 bit	4.5 V	EEPROM SOFTWARE STORE/ RECALL; RETENTION/ENDURANCE-100 YEARS/100000 CYCLES	e0			NO	.00005 Amp	10.03 mm	375 ns
70T3519S133BC	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	262144 words	COMMON	2.5	2.5,2.5/3.3	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40		SRAMs	1 mm	70 Cel	3-STATE	256KX36	256K	2.4 V	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B256	3	2.6 V	1.5 mm	133 MHz	17 mm	Not Qualified	9437184 bit	2.4 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e0	20	225		.015 Amp	17 mm	15 ns
7130LA20JG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	3	5.5 V	4.57 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	20 ns
CY7C131-55JXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	Matte Tin (Sn)	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V	INTERRUPT FLAG	e3	20	260		.015 Amp	19.1262 mm	55 ns
IDT7130LA100P	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	48	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6		SRAMs	2.54 mm	70 Cel	3-STATE	1KX8	1K	2 V	Tin/Lead (Sn85Pb15)	DUAL	2	R-PDIP-T48		5.5 V	5.08 mm		15.24 mm	Not Qualified	8192 bit	4.5 V		e0	30	225		.004 Amp	61.849 mm	100 ns
IDT7130LA100PF	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		SRAMs	.8 mm	70 Cel	3-STATE	1KX8	1K	2 V	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	8192 bit	4.5 V		e0	30	240		.004 Amp	14 mm	100 ns
IDT7130LA100PF8	Integrated Device Technology	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	8	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		SRAMs	.8 mm	70 Cel	3-STATE	1KX8	1K	2 V	TIN LEAD	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	8192 bit	4.5 V		e0	30	240		.004 Amp	14 mm	100 ns
IDT71V124SA15PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.95 mm	15 ns
R1RW0416DSB-2LR#D1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE					70 Cel		256KX16	256K			DUAL		R-PDSO-G44	3	3.6 V					4194304 bit	3 V								12 ns
71V124SA12TYG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	12 ns
71V124SA12TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	12 ns
71V35761S200PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.03 Amp	20 mm	3.1 ns
71V416L10PHG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	18.41 mm	10 ns
DS1245W	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	MICROELECTRONIC ASSEMBLY					70 Cel		128KX8	128K		TIN LEAD	DUAL		R-XDMA-N32						Not Qualified	1048576 bit		10 YEARS OF DATA RETENTION PERIOD	e0						150 ns
IDT71024S12YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.01 Amp	20.96 mm	12 ns
IDT71V124SA12TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	MATTE TIN	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	12 ns
M48Z12-70PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.5 V		e3			YES	.003 Amp	34.545 mm
R1WV6416RSD-5SR	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel	3-STATE	4MX16	4M	2.7 V		DUAL		R-PDSO-G52	1	3.6 V	1.2 mm		8.89 mm	Not Qualified	67108864 bit	2.7 V						.000024 Amp	10.79 mm	55 ns
R1WV6416RSD-5SR#B0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel	3-STATE	4MX16	4M	2 V		DUAL		R-PDSO-G52	2					Not Qualified	67108864 bit					260		.000024 Amp		55 ns
R1WV6416RSD-5SR#S0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel	3-STATE	4MX16	4M	2 V		DUAL		R-PDSO-G52	2					Not Qualified	67108864 bit					260		.000024 Amp		55 ns
70261L15PFG8	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	285 mA	16384 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	262144 bit	4.5 V	SEMAPHORE	e3	30	260		.005 Amp	14 mm	15 ns
CY7C199-35VC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.556 mm		7.5 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					17.907 mm	35 ns
DS1225AD-85	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6		SRAMs	2.54 mm	70 Cel		8KX8	8K		TIN LEAD	DUAL		R-PDMA-P28		5.5 V	10.54 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	38.865 mm	85 ns
DS1225AD-85+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6		SRAMs	2.54 mm	70 Cel		8KX8	8K		Matte Tin (Sn) - annealed	DUAL		R-PDMA-P28		5.5 V				Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.01 Amp		85 ns
IDT70V639S10PRFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		SRAMs	.5 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	Matte Tin (Sn)	QUAD	2	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.15 V		e3	30	260		.015 Amp	20 mm	10 ns
IDT70V639S10PRFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	500 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		SRAMs	.5 mm	70 Cel	3-STATE	128KX18	128K	3.15 V	Matte Tin (Sn) - annealed	QUAD	2	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.15 V		e3	30	260		.015 Amp	20 mm	10 ns
IDT71V124SA10TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	145 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3.15 V	MATTE TIN	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.955 mm	10 ns
IS62C1024L-70W	Integrated Silicon Solution	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.572 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00025 Amp	41.91 mm	70 ns
KM681000CLG-5	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00002 Amp	20.47 mm	55 ns
KM681000CLG-5L	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00001 Amp	20.47 mm	55 ns
M5M5256DP-70LL	Mitsubishi Electric	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.5 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00001 Amp	36.7 mm	70 ns
70261L15PFG	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	285 mA	16384 words	COMMON	5	5	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	16KX16	16K	4.5 V	MATTE TIN	QUAD	2	S-PQFP-G100	3	5.5 V	1.6 mm		14 mm	Not Qualified	262144 bit	4.5 V	SEMAPHORE	e3	30	260		.005 Amp	14 mm	15 ns
70V261L25PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	16KX16	16K	3 V	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	262144 bit	3 V		e3	30	260	YES	.003 Amp	14 mm	25 ns
70V261S35PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	16384 words	COMMON	3.3	3.3	16	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20		SRAMs	.5 mm	70 Cel	3-STATE	16KX16	16K	3 V	Matte Tin (Sn)	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	262144 bit	3 V		e3	NOT SPECIFIED	260	YES	.006 Amp	14 mm	35 ns
7130LA20JG	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	3	5.5 V	4.572 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	20 ns
71V124SA15PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.95 mm	15 ns
71V35761S166PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	320 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.03 Amp	20 mm	3.5 ns
71V35761SA166BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.03 Amp	22 mm	3.5 ns
71V35761SA200BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.03 Amp	22 mm	3.1 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.