COMMERCIAL SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C131E-55JXCT	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	275 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	4.5 V	MATTE TIN	QUAD	2	S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3		260		.015 Amp	19.1262 mm	55 ns
DS1225Y-200	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		TIN LEAD	DUAL		R-XDMA-P28	1	5.5 V	10.54 mm		15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	38.865 mm	200 ns
DS1225Y-200+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		MATTE TIN	DUAL		R-XDMA-P28		5.5 V				Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e3				.005 Amp		200 ns
HM628128BLFP-7	Hitachi	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.3 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	20.45 mm	70 ns
71321SA35TFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	e3	30	260		.015 Amp	10 mm	35 ns
DS1245Y-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		TIN LEAD	DUAL		R-XDMA-T32	1	5.5 V				Not Qualified	1048576 bit	4.5 V		e0				.005 Amp		120 ns
DS1245Y-120+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		Matte Tin (Sn) - annealed	DUAL		R-XDMA-T32		5.5 V				Not Qualified	1048576 bit	4.5 V		e3				.0006 Amp		120 ns
R1RP0416DSB-2PR#D1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE				70 Cel		256KX16	256K			DUAL		R-PDSO-G44	3	5.5 V					4194304 bit	4.5 V								12 ns
71024S15TYG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	40	260	YES	.04 Amp	20.995 mm	15 ns
71321LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	2 V	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3	30	260		.0015 Amp	19.1262 mm	20 ns
71V416S10PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	10 ns
74F189SJ	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		16X4	16			DUAL		R-PDSO-G16		5.5 V	2.108 mm		5.3085 mm		64 bit	4.5 V							10.11 mm	27 ns
M5M51008DVP-70H	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	TSSOP32,.8,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX8	128K	2 V		DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	70 ns
SN74ALS870DW	Texas Instruments	STANDARD SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE	SOP24,.4	Other Memory ICs	1.27 mm	70 Cel		16X4	16			DUAL		R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified	64 bit	4.5 V	DUAL MEMORY FOR MULTIBUS ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED			15.4 mm	17 ns
STK15C88-NF45	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.4	SRAMs	1.27 mm	70 Cel		32KX8	32K		MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3		260		.0015 Amp	17.905 mm	45 ns
71321LA20TFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	200 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	2 V	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK UP	e3	30	260		.004 Amp	10 mm	20 ns
71321LA55TFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	2 V	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.0015 Amp	10 mm	55 ns
71321SA35TFG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	165 mA	2048 words	COMMON	5	5	8	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	Matte Tin (Sn) - annealed	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER DOWN	e3	30	260		.015 Amp	10 mm	35 ns
71V124SA15TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	15 ns
IDT71016S12PHG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G44	3	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.01 Amp	18.41 mm	12 ns
IDT7130LA20JG	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.572 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	20 ns
IDT71342LA20PFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK, LOW PROFILE			.8 mm	70 Cel	3-STATE	4KX8	4K	2 V	MATTE TIN	QUAD	2	S-PQFP-G64	3	5.5 V	1.6 mm		14 mm	Not Qualified	32768 bit	4.5 V	SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP	e3			YES		14 mm	20 ns
M48Z02-70PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	4.75 V	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.75 V		e3			YES	.003 Amp	34.545 mm
71V124SA12YG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	3.6 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	30	260		.01 Amp	20.955 mm	12 ns
CY7C1380D-167AXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	275 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX36	512K		MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.07 Amp	20 mm	3.4 ns
CY7C199-25VC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.556 mm		7.5 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					17.907 mm	25 ns
DM74LS189J	National Semiconductor	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	CERAMIC	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16		Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16						Not Qualified				e0
DM74LS189N	National Semiconductor	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16		Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified				e0
DS1230Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		TIN LEAD	DUAL		R-XDMA-P28	1	5.5 V				Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0	20	240		.005 Amp		70 ns
DS1230Y-70+	Analog Devices	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		Matte Tin (Sn) - annealed	DUAL		R-XDIP-P28		5.5 V	9.4 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e3				.0006 Amp	38.227 mm	70 ns
IDT71V416S12PHG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	3 V	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260	YES	.02 Amp	18.41 mm	12 ns
M5M51008DVP-70H#BT	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel		128KX8	128K			DUAL		R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V							18.4 mm	70 ns
SN74LS189AJ	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	CERAMIC	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16			DUAL		R-XDIP-T16						Not Qualified										80 ns
SN74LS189AN	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16			DUAL		R-PDIP-T16						Not Qualified										80 ns
STK15C88-NF25	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	97 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.4	SRAMs	1.27 mm	70 Cel		32KX8	32K		MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.67 mm		7.505 mm	Not Qualified	262144 bit	4.5 V		e3		260		.0015 Amp	17.905 mm	25 ns
STK15C88-SF25	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	97 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K		MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm		8.6865 mm	Not Qualified	262144 bit	4.5 V		e3		260		.0015 Amp	18.3895 mm	25 ns
STK15C88-SF45	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K		MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm		8.6865 mm	Not Qualified	262144 bit	4.5 V		e3		260		.0015 Amp	18.3895 mm	45 ns
U632H64BSC25G1	Zentrum Mikroelektronik Dresden Ag	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		8KX8	8K		MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.54 mm		8.75 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	18.1 mm	25 ns
71321SA55JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	Matte Tin (Sn) - annealed	QUAD	2	S-PQCC-J52	1	5.5 V				Not Qualified	16384 bit	4.5 V		e3	30	260		.015 Amp		55 ns
AS7C31024B-15JCN	Alliance Memory	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		MATTE TIN	DUAL		R-PDSO-J32	3	3.6 V	3.7084 mm		10.16 mm		1048576 bit	3 V		e3	40	245			20.955 mm	15 ns
IDT7130LA20JG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	1024 words	COMMON	5	5	8	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	1KX8	1K	2 V	MATTE TIN	QUAD	2	S-PQCC-J52	1	5.5 V	4.57 mm		19.1262 mm	Not Qualified	8192 bit	4.5 V		e3	30	260		.0015 Amp	19.1262 mm	20 ns
M48Z08-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES	.003 Amp	39.625 mm	100 ns
STK15C88-SF45TR	Cypress Semiconductor	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K		MATTE TIN	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm		8.6865 mm	Not Qualified	262144 bit	4.5 V		e3		260		.0015 Amp	18.3895 mm	45 ns
IDT71V256SA15PZG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	3 V	MATTE TIN	DUAL	1	R-PDSO-G28	3	3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3 V		e3	40	260	YES	.002 Amp	11.8 mm	15 ns
M48Z35AV-10PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		MATTE TIN	DUAL		R-PDIP-T28		3.6 V	9.65 mm		15.24 mm	Not Qualified	262144 bit	3 V		e3				.003 Amp	39.625 mm	100 ns
M48Z35Y-70PC1	STMicroelectronics	SRAM STD	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e3			YES	.003 Amp	39.625 mm	70 ns
MT58L64L18FT-8.5	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		64KX18	64K		TIN LEAD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V		e0					20 mm	8.5 ns
70V3319S166PRFG	Renesas Electronics	DUAL-PORT SRAM	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	500 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87	SRAMs	.5 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	MATTE TIN	QUAD	2	R-PQFP-G128	3	3.45 V	1.6 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.15 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e3	30	260		.03 Amp	20 mm	3.6 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.