INDUSTRIAL SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
BQ4010YMA-85N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K	-40 Cel		DUAL	R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.004 Amp	37.72 mm	85 ns
BQ4013MA-85N	Texas Instruments	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			105 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	R-PDIP-T32				Not Qualified	1048576 bit						.004 Amp		85 ns
BQ4311LSH-N100	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		32KX8	32K	-40 Cel		DUAL	R-XDMA-G28	3.6 V			Not Qualified	262144 bit	3 V							100 ns
BQ4015YMB-120N	Texas Instruments	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			115 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-PDIP-T32				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.005 Amp		120 ns
BQ4013YMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	R-PDMA-P32	5.5 V	9.53 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.004 Amp	42.8 mm	70 ns
BQ4010YMA-150N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K	-40 Cel		DUAL	R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.004 Amp	37.72 mm	150 ns
BQ4010LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K	-40 Cel		DUAL	R-XDMA-T28	3.6 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.001 Amp	37.72 mm	70 ns
BQ4011YMA-100N	Texas Instruments	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28				Not Qualified	262144 bit						.004 Amp		100 ns
BQ4010LYEBZ-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		8KX8	8K	-40 Cel		DUAL	R-XDMA-T28	5.5 V			Not Qualified	65536 bit	4.5 V					.001 Amp		70 ns
BQ4011YMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDMA-P28	5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.004 Amp	37.72 mm	70 ns
BQ4013LYMA-70	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	IN-LINE				85 Cel		128KX8	128K	-40 Cel		DUAL	R-PDIP-T32	3.6 V				1048576 bit	3 V							70 ns
BQ4311YSH-N70	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		32KX8	32K	-40 Cel		DUAL	R-XDMA-G28	5.5 V			Not Qualified	262144 bit	4.5 V							70 ns
BQ4011MA-150N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		32KX8	32K	-40 Cel		DUAL	R-XDMA-T28	5.5 V			Not Qualified	262144 bit	4.75 V							150 ns
BQ4010YMA-200N	Texas Instruments	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K	-40 Cel		DUAL	R-PDIP-T28				Not Qualified	65536 bit						.004 Amp		200 ns
BQ4013YMS-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	S BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		128KX8	128K	-40 Cel		DUAL	R-XDMA-S34	5.5 V			Not Qualified	1048576 bit	4.5 V							70 ns
MM74C910N	Texas Instruments	STANDARD SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	85 Cel		64X4	64	-40 Cel		DUAL	R-PDIP-T18	5.25 V	5.08 mm	7.62 mm		256 bit	4.75 V						21.78 mm	700 ns
BQ4013YMS-85N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	S BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		128KX8	128K	-40 Cel		DUAL	R-XDMA-S34	5.5 V			Not Qualified	1048576 bit	4.5 V							85 ns
BQ4013YMA-85N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	105 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	R-PDMA-P32	5.5 V	9.53 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.004 Amp	42.8 mm	85 ns
MM74C910J	Texas Instruments	STANDARD SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	85 Cel		64X4	64	-40 Cel		DUAL	R-GDIP-T18	5.25 V	5.08 mm	7.62 mm		256 bit	4.75 V	LG-MAX; WD-MAX					23.24 mm	700 ns
BQ4010YMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K	-40 Cel		DUAL	R-XDMA-T28	5.5 V	9.53 mm	18.415 mm	Not Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.004 Amp	37.72 mm	70 ns
BQ4015YMA-120N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		512KX8	512K	-40 Cel		DUAL	R-XDMA-T32	5.5 V			Not Qualified	4194304 bit	4.5 V							120 ns
BQ4010YEBZ-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		8KX8	8K	-40 Cel		DUAL	R-XDMA-T28	5.5 V			Not Qualified	65536 bit	4.5 V					.001 Amp		70 ns
BQ4015LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	5	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-PDMA-P32	3.6 V			Not Qualified	4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.001 Amp		70 ns
BQ4015LYMA-70	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	IN-LINE				85 Cel		512KX8	512K	-40 Cel		DUAL	R-PDIP-T32	3.6 V				4194304 bit	3 V							70 ns
BQ4011LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDMA-P28	3.6 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.001 Amp	37.72 mm	70 ns
BQ4015YMB-85N	Texas Instruments	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			115 mA	524288 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-PDIP-T32				Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.005 Amp		85 ns
BQ4310YSH-N70	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		8KX8	8K	-40 Cel		DUAL	R-XDMA-G28	5.5 V			Not Qualified	65536 bit	4.5 V							70 ns
BQ4011YMA-150N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDMA-P28	5.5 V	9.53 mm	18.415 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.004 Amp	37.72 mm	150 ns
BQ4013LYMA-70N	Texas Instruments	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	R-PDMA-P32	3.6 V	9.53 mm	15.24 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.001 Amp	42.8 mm	70 ns
NMC6514J-9	Texas Instruments	STANDARD SRAM	INDUSTRIAL	18	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit			e0			.000025 Amp		320 ns
SN74HCT219N	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	31 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-PDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED			27 ns
SN74HCT189J	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	31 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-XDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED			27 ns
SN74HCT189NP3	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	31 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-PDIP-T16									NOT SPECIFIED	NOT SPECIFIED			27 ns
SN74HC189J4	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-XDIP-T16									NOT SPECIFIED	NOT SPECIFIED			81 ns
SN74HC189JP4	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-XDIP-T16									NOT SPECIFIED	NOT SPECIFIED			81 ns
SN74HCT189FH	Texas Instruments	STANDARD SRAM	INDUSTRIAL	20	QCCN	SQUARE	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	31 mA	16 words		5	5	4	CHIP CARRIER	LCC20,.35SQ	SRAMs	1.27 mm	85 Cel	3-STATE	16X4	16	-40 Cel		QUAD	S-XQCC-N20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED			27 ns
SN74HCT189N3	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	31 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-PDIP-T16									NOT SPECIFIED	NOT SPECIFIED			27 ns
SN74HC219J	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-XDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED			81 ns
SN74HC219J4	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-XDIP-T16									NOT SPECIFIED	NOT SPECIFIED			81 ns
SN74HCT219JP4	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	31 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-XDIP-T16									NOT SPECIFIED	NOT SPECIFIED			27 ns
SN74HC219NP3	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-PDIP-T16									NOT SPECIFIED	NOT SPECIFIED			81 ns
SN74HC219NP1	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-PDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED			81 ns
SN74HC189J	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-XDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED			81 ns
SN74HC219N1	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-PDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED			81 ns
SN74HC189FH	Texas Instruments	STANDARD SRAM	INDUSTRIAL	20	QCCN	SQUARE	CERAMIC	YES		CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		16 words				4	CHIP CARRIER	LCC20,.35SQ	SRAMs	1.27 mm	85 Cel	3-STATE	16X4	16	-40 Cel		QUAD	S-XQCC-N20				Not Qualified					NOT SPECIFIED	NOT SPECIFIED			81 ns
SN74HCT219N3	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	31 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-PDIP-T16									NOT SPECIFIED	NOT SPECIFIED			27 ns
SN74HCT219J	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	31 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-XDIP-T16				Not Qualified					NOT SPECIFIED	NOT SPECIFIED			27 ns
SN74HC219N3	Texas Instruments	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	16X4	16	-40 Cel		DUAL	R-PDIP-T16									NOT SPECIFIED	NOT SPECIFIED			81 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.