INDUSTRIAL SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

M48Z35AY-100MH6TR

STMicroelectronics

NON-VOLATILE SRAM

INDUSTRIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE

85 Cel

32KX8

32K

-40 Cel

DUAL

R-PDSO-G28

5.5 V

Not Qualified

262144 bit

4.5 V

100 ns

M48Z35AY-70MH6

STMicroelectronics

NON-VOLATILE SRAM

INDUSTRIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

32768 words

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

85 Cel

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

3.05 mm

8.56 mm

Not Qualified

262144 bit

4.5 V

SNAPHAT BATTERY TO BE ORDERED SEPARATELY

e0

.003 Amp

18.1 mm

70 ns

M48Z12-150PC6

STMicroelectronics

NON-VOLATILE SRAM MODULE

INDUSTRIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

2048 words

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

-40 Cel

MATTE TIN

DUAL

1

R-PDIP-T24

5.5 V

9.65 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

e3

YES

.003 Amp

34.545 mm

150 ns

M48Z12-200PC6

STMicroelectronics

NON-VOLATILE SRAM MODULE

INDUSTRIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

2048 words

5

5

8

IN-LINE

DIP24,.6

SRAMs

2.54 mm

85 Cel

3-STATE

2KX8

2K

-40 Cel

MATTE TIN

DUAL

1

R-PDIP-T24

5.5 V

9.65 mm

15.24 mm

Not Qualified

16384 bit

4.5 V

BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION

e3

YES

.003 Amp

34.545 mm

200 ns

935154900112

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

256 words

5

8

IN-LINE

2.54 mm

85 Cel

256X8

256

-40 Cel

DUAL

R-PDIP-T8

6 V

4.2 mm

7.62 mm

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

9.5 mm

SCM69C233TQ15

NXP Semiconductors

CONTENT ADDRESSABLE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4096 words

3.3

64

FLATPACK, LOW PROFILE

.65 mm

85 Cel

4KX64

4K

-40 Cel

QUAD

R-PQFP-G100

3.5 V

1.6 mm

16 mm

262144 bit

3.1 V

20 mm

210 ns

SCM6323ATS10A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

1048576 bit

.005 Amp

10 ns

SCM69C233TQ15R

NXP Semiconductors

CONTENT ADDRESSABLE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4096 words

3.3

64

FLATPACK, LOW PROFILE

.65 mm

85 Cel

4KX64

4K

-40 Cel

QUAD

R-PQFP-G100

3.5 V

1.6 mm

16 mm

262144 bit

3.1 V

20 mm

210 ns

SCM63P733ATQ133

NXP Semiconductors

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

32

FLATPACK, LOW PROFILE

.65 mm

85 Cel

128KX32

128K

-40 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

4194304 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

4 ns

SCM6341ZP11A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

131072 words

3.3

24

GRID ARRAY

1.27 mm

85 Cel

128KX24

128K

-40 Cel

BOTTOM

R-PBGA-B119

3.6 V

2.4 mm

14 mm

3145728 bit

3 V

22 mm

11 ns

SCM6341ZP10C

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

131072 words

3.3

24

GRID ARRAY

1.27 mm

85 Cel

128KX24

128K

-40 Cel

BOTTOM

R-PBGA-B119

3.6 V

2.4 mm

14 mm

3145728 bit

3 V

22 mm

10 ns

SCM69C232TQ20R

NXP Semiconductors

CONTENT ADDRESSABLE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4096 words

3.3

64

FLATPACK, LOW PROFILE

.65 mm

85 Cel

4KX64

4K

-40 Cel

QUAD

R-PQFP-G100

3.5 V

1.6 mm

14 mm

262144 bit

3.1 V

20 mm

9 ns

PCF8570T/F5,518

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

COMMON

5

3/5

8

SMALL OUTLINE

SOP8,.4

SRAMs

1.27 mm

85 Cel

OPEN-DRAIN

256X8

256

1 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-G8

2

6 V

2.65 mm

.1 MHz

7.5 mm

Not Qualified

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

e4

NO

7.55 mm

3400 ns

SCM6343TS12A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

250 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-G44

3.63 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

.01 Amp

18.41 mm

12 ns

SCM63F733ATQ10R

NXP Semiconductors

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

32

FLATPACK, LOW PROFILE

.65 mm

85 Cel

128KX32

128K

-40 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

4194304 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

20 mm

10 ns

SCM6343YJ11A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

255 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-J44

3.63 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

.01 Amp

28.575 mm

11 ns

PCF8570P

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

.2 mA

256 words

COMMON

5

3/5

8

IN-LINE

DIP8,.3

SRAMs

2.54 mm

85 Cel

OPEN-DRAIN

256X8

256

1 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDIP-T8

6 V

4.2 mm

.1 MHz

7.62 mm

Not Qualified

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

e4

NO

.0000004 Amp

9.5 mm

PCF8570PN

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

.2 mA

256 words

COMMON

5

3/5

8

IN-LINE

DIP8,.3

SRAMs

2.54 mm

85 Cel

OPEN-DRAIN

256X8

256

1 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDIP-T8

6 V

4.2 mm

.1 MHz

7.62 mm

Not Qualified

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

e4

NO

.0000004 Amp

9.5 mm

SCM6323AYJ12A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

170 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

.005 Amp

12 ns

SCM6323ATS12A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

140 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

1048576 bit

.005 Amp

12 ns

SCM63F733ATQ11R

NXP Semiconductors

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

32

FLATPACK, LOW PROFILE

.65 mm

85 Cel

128KX32

128K

-40 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

4194304 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

20 mm

11 ns

SCM6343TS15AR

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

240 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-G44

3.63 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

.01 Amp

18.41 mm

15 ns

PCF8571T

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

8

SMALL OUTLINE

85 Cel

128X8

128

1 V

-40 Cel

DUAL

1

R-PDSO-G8

6 V

Not Qualified

1024 bit

2.5 V

I2C BUS INTERFACE

NO

935154920512

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

256X8

256

-40 Cel

DUAL

R-PDSO-G8

6 V

2.65 mm

7.5 mm

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

7.55 mm

SCM63F733ATQ11

NXP Semiconductors

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

32

FLATPACK, LOW PROFILE

.65 mm

85 Cel

128KX32

128K

-40 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

4194304 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

20 mm

11 ns

SCM69C432TQ20

NXP Semiconductors

CONTENT ADDRESSABLE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

16

FLATPACK, LOW PROFILE

.65 mm

85 Cel

64KX16

64K

-40 Cel

QUAD

R-PQFP-G100

3.5 V

1.6 mm

14 mm

1048576 bit

3.1 V

20 mm

8 ns

SCM6323AYJ10AR

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

150 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

DUAL

R-PDSO-J44

Not Qualified

1048576 bit

.005 Amp

10 ns

SCM63P733ATQ133R

NXP Semiconductors

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

32

FLATPACK, LOW PROFILE

.65 mm

85 Cel

128KX32

128K

-40 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

4194304 bit

3.135 V

PIPELINED ARCHITECTURE

20 mm

4 ns

PCF8571P

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

128 words

5

8

IN-LINE

2.54 mm

85 Cel

128X8

128

1 V

-40 Cel

DUAL

1

R-PDIP-T8

6 V

4.2 mm

7.62 mm

Not Qualified

1024 bit

2.5 V

I2C BUS INTERFACE

NO

9.5 mm

SCM6343YJ12A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

250 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-J44

3.63 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

.01 Amp

28.575 mm

12 ns

PCF8570CT-T

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

85 Cel

OPEN-DRAIN

256X8

256

1 V

-40 Cel

DUAL

1

R-PDSO-G8

6 V

Not Qualified

2048 bit

2.5 V

I2C BUS INTERFACE

NO

PCF8570T/F5,118

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

256X8

256

-40 Cel

DUAL

R-PDSO-G8

6 V

2.65 mm

7.5 mm

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

7.55 mm

SCM69C232TQ20

NXP Semiconductors

CONTENT ADDRESSABLE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4096 words

3.3

64

FLATPACK, LOW PROFILE

.65 mm

85 Cel

4KX64

4K

-40 Cel

QUAD

R-PQFP-G100

3.5 V

1.6 mm

14 mm

262144 bit

3.1 V

20 mm

9 ns

SCM63F733ATQ10

NXP Semiconductors

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

32

FLATPACK, LOW PROFILE

.65 mm

85 Cel

128KX32

128K

-40 Cel

QUAD

R-PQFP-G100

3.6 V

1.6 mm

14 mm

4194304 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

20 mm

10 ns

935154920112

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

256X8

256

-40 Cel

DUAL

R-PDSO-G8

6 V

2.65 mm

7.5 mm

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

7.55 mm

SCM6343TS11A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

255 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-G44

3.63 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

.01 Amp

18.41 mm

11 ns

SCM6343TS12AR

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

250 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-G44

3.63 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

.01 Amp

18.41 mm

12 ns

SCM6341ZP12A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

131072 words

3.3

24

GRID ARRAY

1.27 mm

85 Cel

128KX24

128K

-40 Cel

BOTTOM

R-PBGA-B119

3.6 V

2.4 mm

14 mm

3145728 bit

3 V

22 mm

12 ns

SCM69C433TQ15R

NXP Semiconductors

CONTENT ADDRESSABLE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

16384 words

3.3

64

FLATPACK, LOW PROFILE

.65 mm

85 Cel

16KX64

16K

-40 Cel

QUAD

R-PQFP-G100

3.5 V

1.6 mm

14 mm

1048576 bit

3.1 V

20 mm

8 ns

SCM6343TS11AR

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

255 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-G44

3.63 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

.01 Amp

18.41 mm

11 ns

SCM6343YJ12AR

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

250 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

DUAL

R-PDSO-J44

3.63 V

3.76 mm

10.16 mm

Not Qualified

4194304 bit

2.97 V

.01 Amp

28.575 mm

12 ns

PCF8570T/F5,512

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

.2 mA

256 words

COMMON

5

3/5

8

SMALL OUTLINE

SOP8,.4

SRAMs

1.27 mm

85 Cel

OPEN-DRAIN

256X8

256

1 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-G8

2

6 V

2.65 mm

.1 MHz

7.5 mm

Not Qualified

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

e4

260

NO

.0000004 Amp

7.55 mm

3400 ns

SCM69C433TQ15

NXP Semiconductors

CONTENT ADDRESSABLE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

16384 words

3.3

64

FLATPACK, LOW PROFILE

.65 mm

85 Cel

16KX64

16K

-40 Cel

QUAD

R-PQFP-G100

3.5 V

1.6 mm

14 mm

1048576 bit

3.1 V

20 mm

8 ns

PCF8570T

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

.2 mA

256 words

COMMON

5

3/5

8

SMALL OUTLINE

SOP8,.4

SRAMs

1.27 mm

85 Cel

OPEN-DRAIN

256X8

256

1 V

-40 Cel

DUAL

1

R-PDSO-G8

6 V

2.65 mm

.1 MHz

7.5 mm

Not Qualified

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

40

260

NO

.0000004 Amp

7.55 mm

PCF8570P/F5,112

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

.2 mA

256 words

COMMON

5

3/5

8

IN-LINE

DIP8,.3

SRAMs

2.54 mm

85 Cel

OPEN-DRAIN

256X8

256

1 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDIP-T8

6 V

4.2 mm

.1 MHz

7.62 mm

Not Qualified

2048 bit

2.5 V

2-WIRE I2C SERIAL INTERFACE

e4

NO

.0000004 Amp

9.5 mm

SCM6323ATS12AR

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

140 mA

65536 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

3 V

-40 Cel

DUAL

R-PDSO-G44

Not Qualified

1048576 bit

.005 Amp

12 ns

SCM6341ZP15A

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

119

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

131072 words

3.3

24

GRID ARRAY

1.27 mm

85 Cel

128KX24

128K

-40 Cel

BOTTOM

R-PBGA-B119

3.6 V

2.4 mm

14 mm

3145728 bit

3 V

22 mm

15 ns

PCF8583T-T

NXP Semiconductors

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

TOTEM POLE

256X8

256

1 V

-40 Cel

DUAL

1

R-PDSO-G8

6 V

2.65 mm

7.5 mm

Not Qualified

2048 bit

2.5 V

NO

7.55 mm

3400 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.