Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
1.95 V |
1.2 mm |
6 mm |
Not Qualified |
8388608 bit |
1.65 V |
7 mm |
55 ns |
||||||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
SRAMs |
2.54 mm |
105 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T24 |
5.5 V |
4.445 mm |
15.24 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
YES |
.001 Amp |
250 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
131072 words |
COMMON |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1.5 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
2097152 bit |
2.7 V |
e0 |
.000009 Amp |
18.41 mm |
70 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
26 mA |
131072 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
2097152 bit |
2.7 V |
e1 |
.000009 Amp |
8 mm |
55 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
1.5 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
3 mm |
11.303 mm |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
.000009 Amp |
20.445 mm |
70 ns |
||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
10 mA |
262144 words |
COMMON |
1.8 |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
R-PBGA-B48 |
1.95 V |
1.2 mm |
6 mm |
Not Qualified |
4194304 bit |
1.65 V |
e0 |
.000003 Amp |
7 mm |
55 ns |
||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
2048 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
105 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
Not Qualified |
16384 bit |
e0 |
.000003 Amp |
250 ns |
||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
26 mA |
262144 words |
COMMON |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
.000009 Amp |
18.41 mm |
55 ns |
||||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN/TIN BISMUTH |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e3/e6 |
NOT SPECIFIED |
260 |
.000006 Amp |
11.8 mm |
70 ns |
|||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
140 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J32 |
Not Qualified |
1048576 bit |
e0 |
.0005 Amp |
20 ns |
||||||||||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
524288 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
8388608 bit |
2.7 V |
e1 |
.00003 Amp |
7 mm |
70 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.000006 Amp |
11.8 mm |
55 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
10 mA |
262144 words |
COMMON |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
NOT SPECIFIED |
260 |
.000009 Amp |
18.41 mm |
70 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
5.5 V |
2.79 mm |
7.505 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.000006 Amp |
18.22 mm |
70 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1-R |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
YES |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN/TIN BISMUTH |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e3/e6 |
NOT SPECIFIED |
260 |
.000006 Amp |
11.8 mm |
55 ns |
||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
524288 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
8388608 bit |
2.7 V |
e1 |
.00003 Amp |
7 mm |
55 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
4194304 bit |
2.7 V |
e0 |
.000009 Amp |
8 mm |
70 ns |
||||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
26 mA |
262144 words |
COMMON |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
NOT SPECIFIED |
260 |
.000009 Amp |
18.41 mm |
55 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
262144 words |
COMMON |
1.8 |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
1.95 V |
1.2 mm |
6 mm |
Not Qualified |
4194304 bit |
1.65 V |
e1 |
.000003 Amp |
7 mm |
55 ns |
||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
6 mA |
262144 words |
COMMON |
1.8 |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
R-PBGA-B48 |
1.95 V |
1.2 mm |
6 mm |
Not Qualified |
4194304 bit |
1.65 V |
e0 |
.000003 Amp |
7 mm |
70 ns |
||||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
131072 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1.5 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
2097152 bit |
2.7 V |
e0 |
.000009 Amp |
8 mm |
70 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
4 words |
5 |
2/6 |
4 |
CHIP CARRIER |
LDCC20,.4SQ |
Other Memory ICs |
1.27 mm |
85 Cel |
3-STATE |
4X4 |
4 |
-40 Cel |
MATTE TIN |
QUAD |
1 |
S-CQCC-N20 |
6 V |
1.86 mm |
8.89 mm |
Not Qualified |
16 bit |
2 V |
e3 |
NO |
8.89 mm |
46 ns |
|||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
32768 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
1.5 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
3.6 V |
2.85 mm |
8.407 mm |
Not Qualified |
262144 bit |
2.7 V |
e0 |
.000006 Amp |
18.11 mm |
55 ns |
||||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
5.5 V |
2.79 mm |
7.505 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.000006 Amp |
18.22 mm |
55 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
15 mA |
262144 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
4194304 bit |
2.7 V |
e1 |
.00002 Amp |
7 mm |
55 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.000006 Amp |
11.8 mm |
55 ns |
||||||||||||||||
|
STMicroelectronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
15 mA |
262144 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
7 mm |
Not Qualified |
4194304 bit |
2.7 V |
e1 |
.00002 Amp |
8 mm |
70 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.5 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
3 mm |
11.303 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
.0000045 Amp |
20.447 mm |
70 ns |
||||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.000006 Amp |
37.085 mm |
70 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
131072 words |
COMMON |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1.5 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
2097152 bit |
2.7 V |
NOT SPECIFIED |
260 |
.000009 Amp |
18.41 mm |
70 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T32 |
5.5 V |
4.83 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
.0000045 Amp |
42.035 mm |
55 ns |
|||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
15 mA |
262144 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
7 mm |
Not Qualified |
4194304 bit |
2.7 V |
e1 |
.00002 Amp |
8 mm |
70 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDIP-T32 |
5.5 V |
4.83 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
42.035 mm |
70 ns |
||||||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
1.95 V |
1.2 mm |
6 mm |
Not Qualified |
8388608 bit |
1.65 V |
7 mm |
55 ns |
||||||||||||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
.000005 Amp |
18.4 mm |
100 ns |
||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
1.5 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
2.7 V |
e0 |
.0000045 Amp |
18.4 mm |
70 ns |
||||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
3 |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
NOT SPECIFIED |
260 |
.000009 Amp |
18.41 mm |
70 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.000009 Amp |
20.95 mm |
55 ns |
||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
1.95 V |
1.2 mm |
8 mm |
Not Qualified |
8388608 bit |
1.65 V |
10 mm |
55 ns |
||||||||||||||||||||||||||
|
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
26 mA |
262144 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.2 mm |
6 mm |
Not Qualified |
4194304 bit |
2.7 V |
e1 |
.000009 Amp |
8 mm |
55 ns |
|||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
12 mA |
524288 words |
COMMON |
1.8 |
1.8 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
1.95 V |
1.2 mm |
8 mm |
Not Qualified |
8388608 bit |
1.65 V |
e0 |
.000008 Amp |
10 mm |
70 ns |
||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0000045 Amp |
11.8 mm |
55 ns |
||||||||||||||||
STMicroelectronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0000045 Amp |
11.8 mm |
55 ns |
||||||||||||||||
STMicroelectronics |
NON-VOLATILE SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
85 Cel |
32KX8 |
32K |
-40 Cel |
DUAL |
R-PDSO-G28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
100 ns |
||||||||||||||||||||||||||||||
|
STMicroelectronics |
NON-VOLATILE SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
3.6 V |
3.05 mm |
8.56 mm |
Not Qualified |
262144 bit |
3 V |
SNAPHAT BATTERY TO BE ORDERED SEPARATELY |
e0 |
.003 Amp |
18.1 mm |
100 ns |
|||||||||||||||||
STMicroelectronics |
NON-VOLATILE SRAM MODULE |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
115 mA |
524288 words |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDIP-T32 |
5.5 V |
9.52 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.75 V |
.005 Amp |
42.8 mm |
70 ns |
|||||||||||||||||||||
STMicroelectronics |
NON-VOLATILE SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
3.6 V |
3.05 mm |
8.56 mm |
Not Qualified |
262144 bit |
3 V |
BATTERY BACKUP; WRITE PROTECT |
e0 |
.003 Amp |
18.1 mm |
100 ns |
||||||||||||||||||
STMicroelectronics |
NON-VOLATILE SRAM MODULE |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
524288 words |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
R-PDIP-T32 |
5.5 V |
9.52 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.75 V |
.003 Amp |
42.8 mm |
85 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.