MILITARY SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

SNJ54LS317J

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

TTL

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

4

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

OPEN-COLLECTOR

64X4

64

-55 Cel

DUAL

R-XDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

8403611LA

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

2.54 mm

125 Cel

2KX8

2K

-55 Cel

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

31.877 mm

55 ns

SM64C64-45JDM

Texas Instruments

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

16384 words

COMMON

5

5

4

IN-LINE

DIP22,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX4

16K

2 V

-55 Cel

DUAL

1

R-CDIP-T22

5.5 V

Not Qualified

65536 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

.0001 Amp

45 ns

SNC54ALS217FH

Texas Instruments

STANDARD SRAM

MILITARY

20

QCCN

SQUARE

CERAMIC

YES

TTL

MIL-STD-883 Class B (Modified)

NO LEAD

PARALLEL

ASYNCHRONOUS

64 words

4

CHIP CARRIER

LCC20,.35SQ

SRAMs

1.27 mm

125 Cel

3-STATE

64X4

64

-55 Cel

QUAD

S-XQCC-N20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

M38510/28903BYX

Texas Instruments

STANDARD SRAM

MILITARY

18

DFP

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

4096 words

5

1

FLATPACK

125 Cel

4KX1

4K

-55 Cel

DUAL

R-XDFP-F18

5.5 V

Not Qualified

4096 bit

4.5 V

55 ns

SNJ54LS318W

Texas Instruments

STANDARD SRAM

MILITARY

20

DFP

RECTANGULAR

CERAMIC

YES

TTL

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

32 words

8

FLATPACK

FL20,.3

SRAMs

1.27 mm

125 Cel

OPEN-COLLECTOR

32X8

32

-55 Cel

DUAL

R-XDFP-F20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

8002501EX

Texas Instruments

STANDARD SRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

TTL

THROUGH-HOLE

PARALLEL

SYNCHRONOUS

4 words

5

4

IN-LINE

125 Cel

4X4

4

-55 Cel

DUAL

R-GDIP-T16

5.5 V

Not Qualified

16 bit

4.5 V

5962-8670510RA

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

4

IN-LINE

125 Cel

4KX4

4K

-55 Cel

TIN LEAD

DUAL

R-GDIP-T20

5.5 V

Not Qualified

16384 bit

4.5 V

e0

70 ns

5962-8685920TX

Texas Instruments

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

4

IN-LINE

2.54 mm

125 Cel

16KX4

16K

-55 Cel

DUAL

R-XDIP-T22

5.5 V

5.08 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

29.335 mm

55 ns

MM54C910N

Texas Instruments

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

5

4

IN-LINE

2.54 mm

125 Cel

64X4

64

-55 Cel

DUAL

R-PDIP-T18

5.5 V

5.08 mm

7.62 mm

256 bit

4.5 V

21.78 mm

860 ns

SN54S301W

Texas Instruments

STANDARD SRAM

MILITARY

16

DFP

RECTANGULAR

CERAMIC

YES

TTL

FLAT

PARALLEL

ASYNCHRONOUS

140 mA

256 words

5

5

1

FLATPACK

FL16,.3

SRAMs

1.27 mm

125 Cel

OPEN-COLLECTOR

256X1

256

-55 Cel

DUAL

R-XDFP-F16

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

SN54LS219AW

Texas Instruments

STANDARD SRAM

MILITARY

16

DFP

RECTANGULAR

CERAMIC

YES

TTL

FLAT

PARALLEL

ASYNCHRONOUS

16 words

4

FLATPACK

FL16,.3

SRAMs

1.27 mm

125 Cel

3-STATE

16X4

16

-55 Cel

DUAL

R-XDFP-F16

Not Qualified

SNJ54S207J

Texas Instruments

STANDARD SRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

125 Cel

3-STATE

256X4

256

-55 Cel

DUAL

R-XDIP-T16

Not Qualified

1024 bit

NOT SPECIFIED

NOT SPECIFIED

SMJ684002-35HJA

Texas Instruments

STANDARD SRAM

MILITARY

36

SOJ

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

125 Cel

3-STATE

512KX8

512K

-55 Cel

DUAL

1

R-CDSO-J36

5.5 V

Not Qualified

4194304 bit

4.5 V

YES

35 ns

5962-7704201VEX

Texas Instruments

STANDARD SRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

TTL

MIL-PRF-38535 Class V

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

5

4

IN-LINE

2.54 mm

125 Cel

4X4

4

-55 Cel

DUAL

R-GDIP-T16

NOT APPLICABLE

5.5 V

5.08 mm

7.62 mm

Not Qualified

16 bit

4.5 V

NOT APPLICABLE

NOT APPLICABLE

10.2 mm

45 ns

SNC54LS312W

Texas Instruments

STANDARD SRAM

MILITARY

20

DFP

RECTANGULAR

CERAMIC

YES

TTL

MIL-STD-883 Class B (Modified)

FLAT

PARALLEL

ASYNCHRONOUS

16 words

9

FLATPACK

FL20,.3

SRAMs

1.27 mm

125 Cel

OPEN-COLLECTOR

16X9

16

-55 Cel

DUAL

R-XDFP-F20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SNC5481AW

Texas Instruments

STANDARD SRAM

MILITARY

14

DFP

RECTANGULAR

CERAMIC

YES

TTL

MIL-STD-883 Class B (Modified)

FLAT

PARALLEL

ASYNCHRONOUS

16 words

1

FLATPACK

FL14,.3

SRAMs

1.27 mm

125 Cel

OPEN-COLLECTOR

16X1

16

-55 Cel

DUAL

R-XDFP-F14

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

5962-8601508XX

Texas Instruments

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

90 mA

65536 words

SEPARATE

5

5

1

IN-LINE

DIP22,.3

SRAMs

2.54 mm

125 Cel

3-STATE

64KX1

64K

2 V

-55 Cel

GOLD

DUAL

R-CDIP-T22

5.5 V

4.521 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e4

.001 Amp

27.94 mm

70 ns

SM68CE64-25FGM

Texas Instruments

STANDARD SRAM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

130 mA

8192 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

SRAMs

1.27 mm

125 Cel

3-STATE

8KX8

8K

2 V

-55 Cel

QUAD

1

R-CQCC-N32

5.5 V

Not Qualified

65536 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0001 Amp

25 ns

SNC54LS319W

Texas Instruments

STANDARD SRAM

MILITARY

16

DFP

RECTANGULAR

CERAMIC

YES

TTL

MIL-STD-883 Class B (Modified)

FLAT

PARALLEL

ASYNCHRONOUS

16 words

4

FLATPACK

FL16,.3

SRAMs

1.27 mm

125 Cel

OPEN-COLLECTOR

16X4

16

-55 Cel

DUAL

R-XDFP-F16

Not Qualified

SNJ54170J

Texas Instruments

STANDARD SRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

5

5

4

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

125 Cel

4X4

4

-55 Cel

DUAL

R-CDIP-T16

5.5 V

5.08 mm

7.62 mm

Not Qualified

16 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

19.56 mm

8403614LA

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

8

IN-LINE

2.54 mm

125 Cel

2KX8

2K

-55 Cel

DUAL

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

31.877 mm

35 ns

SM68CE256-45JDM

Texas Instruments

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

1

R-CDIP-T28

5.5 V

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0002 Amp

45 ns

SN54S289BW

Texas Instruments

STANDARD SRAM

MILITARY

16

DFP

RECTANGULAR

CERAMIC

YES

TTL

FLAT

PARALLEL

ASYNCHRONOUS

16 words

4

FLATPACK

FL16,.3

SRAMs

1.27 mm

125 Cel

3-STATE

16X4

16

-55 Cel

DUAL

R-XDFP-F16

Not Qualified

50 ns

8413208RX

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

UNSPECIFIED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

1

IN-LINE

125 Cel

16KX1

16K

-55 Cel

DUAL

R-XDIP-T20

5.5 V

16384 bit

4.5 V

55 ns

SN54ALS870FK

Texas Instruments

STANDARD SRAM

MILITARY

28

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

TTL

NO LEAD

PARALLEL

ASYNCHRONOUS

16 words

5

4

CHIP CARRIER

LCC28,.45SQ

Other Memory ICs

1.27 mm

125 Cel

3-STATE

16X4

16

-55 Cel

QUAD

2

S-CQCC-N28

5.5 V

2.03 mm

11.43 mm

Not Qualified

64 bit

4.5 V

DUAL MEMORY FOR MULTIBUS ARCHITECTURE

NOT SPECIFIED

NOT SPECIFIED

NO

11.43 mm

20 ns

SMV512K32HFG

Texas Instruments

STANDARD SRAM

MILITARY

76

GQFF

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535V;38534K;883S

FLAT

PARALLEL

ASYNCHRONOUS

635 mA

524288 words

COMMON

1.8

1.8

32

FLATPACK, GUARD RING

TPAK76,2SQ,25

SRAMs

.64 mm

125 Cel

3-STATE

512KX32

512K

1.7 V

-55 Cel

GOLD

QUAD

1

R-CQFP-F76

3.6 V

2.67 mm

22 MHz

20.46 mm

Not Qualified

16777216 bit

3 V

e4

YES

.00033 Amp

25.31 mm

20 ns

SNJ54LS212W

Texas Instruments

STANDARD SRAM

MILITARY

20

DFP

RECTANGULAR

CERAMIC

YES

TTL

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

16 words

9

FLATPACK

FL20,.3

SRAMs

1.27 mm

125 Cel

3-STATE

16X9

16

-55 Cel

DUAL

R-XDFP-F20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SM68CE16-25JDM

Texas Instruments

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

DUAL

1

R-CDIP-T24

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0001 Amp

25 ns

SN5481W

Texas Instruments

STANDARD SRAM

MILITARY

14

DFP

RECTANGULAR

CERAMIC

YES

TTL

FLAT

PARALLEL

ASYNCHRONOUS

16 words

1

FLATPACK

FL14,.3

SRAMs

1.27 mm

125 Cel

OPEN-COLLECTOR

16X1

16

-55 Cel

DUAL

R-XDFP-F14

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SN54LS670FK

Texas Instruments

STANDARD SRAM

MILITARY

20

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

TTL

NO LEAD

PARALLEL

ASYNCHRONOUS

4 words

5

5

4

CHIP CARRIER

LCC20,.35SQ

Other Memory ICs

1.27 mm

125 Cel

3-STATE

4X4

4

-55 Cel

QUAD

1

S-CQCC-N20

5.5 V

2.03 mm

8.89 mm

Not Qualified

16 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

NO

8.89 mm

45 ns

SMJ5C1008-25HMM

Texas Instruments

STANDARD SRAM

MILITARY

32

SON

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOLCC32,.4

SRAMs

1.27 mm

125 Cel

3-STATE

128KX8

128K

2 V

-55 Cel

DUAL

R-CDSO-N32

5.5 V

2.54 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

LOW POWER STANDBY MODE

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

20.955 mm

25 ns

SN54LS318J

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32 words

8

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

OPEN-COLLECTOR

32X8

32

-55 Cel

DUAL

R-XDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SN54HCT189FK

Texas Instruments

STANDARD SRAM

MILITARY

20

QCCN

SQUARE

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

16 words

5

5

4

CHIP CARRIER

LCC20,.35SQ

SRAMs

1.27 mm

125 Cel

3-STATE

16X4

16

-55 Cel

QUAD

S-XQCC-N20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

27 ns

SMJ684002-20HJAM

Texas Instruments

STANDARD SRAM

MILITARY

36

SOJ

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE

1.27 mm

125 Cel

512KX8

512K

-55 Cel

DUAL

R-CDSO-J36

5.5 V

4.77 mm

10.795 mm

Not Qualified

4194304 bit

4.5 V

LOW POWER STANDBY MODE

23.37 mm

20 ns

SNC54LS211J

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC

NO

TTL

MIL-STD-883 Class B (Modified)

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

9

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16X9

16

-55 Cel

DUAL

R-XDIP-T20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SNJ54LS213W

Texas Instruments

STANDARD SRAM

MILITARY

20

DFP

RECTANGULAR

CERAMIC

YES

TTL

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

16 words

12

FLATPACK

FL20,.3

SRAMs

1.27 mm

125 Cel

3-STATE

16X12

16

-55 Cel

DUAL

R-XDFP-F20

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SN54ALS871FK

Texas Instruments

MULTI-PORT SRAM

MILITARY

28

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

TTL

NO LEAD

PARALLEL

ASYNCHRONOUS

16 words

5

4

CHIP CARRIER

LCC28,.45SQ

Other Memory ICs

1.27 mm

125 Cel

3-STATE

16X4

16

-55 Cel

QUAD

2

S-CQCC-N28

5.5 V

2.03 mm

11.43 mm

Not Qualified

64 bit

4.5 V

DUAL MEMORY FOR MULTIBUS ARCHITECTURE; SEPARATE I/O FOR PORT A

NOT SPECIFIED

NOT SPECIFIED

NO

11.43 mm

SMJ5C1008-25JDCM

Texas Instruments

STANDARD SRAM

MILITARY

32

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

140 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.4

SRAMs

2.54 mm

125 Cel

3-STATE

128KX8

128K

2 V

-55 Cel

DUAL

R-CDIP-T32

5.5 V

4.57 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

LOW POWER STANDBY MODE

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

40.645 mm

25 ns

5962-9560002M8A

Texas Instruments

STANDARD SRAM

MILITARY

36

SOJ

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

MIL-STD-883

J BEND

PARALLEL

ASYNCHRONOUS

225 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOJ36,.44

SRAMs

1.27 mm

125 Cel

3-STATE

512KX8

512K

4.5 V

-55 Cel

DUAL

R-XDSO-J36

5.5 V

2.79 mm

10.795 mm

Not Qualified

4194304 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.025 Amp

23.37 mm

35 ns

SMJ61CD16-35JDM

Texas Instruments

STANDARD SRAM

MILITARY

20

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

16384 words

SEPARATE

5

5

1

IN-LINE

DIP20,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX1

16K

2 V

-55 Cel

DUAL

1

R-CDIP-T20

5.5 V

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

NO

35 ns

SMJ69CE288-45FGM

Texas Instruments

STANDARD SRAM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

32768 words

5

9

CHIP CARRIER

125 Cel

3-STATE

32KX9

32K

-55 Cel

QUAD

1

R-CQCC-N32

5.5 V

Not Qualified

294912 bit

4.5 V

AUTOMATIC POWER-DOWN

YES

45 ns

SNJ54LS219J

Texas Instruments

STANDARD SRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16X4

16

-55 Cel

DUAL

R-XDIP-T16

Not Qualified

SMJ68CE64-35JDM

Texas Instruments

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

125 Cel

3-STATE

8KX8

8K

2 V

-55 Cel

DUAL

1

R-CDIP-T28

5.5 V

Not Qualified

65536 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

YES

.0001 Amp

35 ns

SNM54S189AJ

Texas Instruments

STANDARD SRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

MIL-STD-883 Class C

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16 words

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16X4

16

-55 Cel

DUAL

R-XDIP-T16

Not Qualified

50 ns

5962-9560007MTA

Texas Instruments

STANDARD SRAM

MILITARY

36

DFP

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

38535Q/M;38534H;883B

FLAT

PARALLEL

ASYNCHRONOUS

225 mA

524288 words

COMMON

5

5

8

FLATPACK

FL36,.5

SRAMs

1.27 mm

125 Cel

3-STATE

512KX8

512K

2 V

-55 Cel

DUAL

R-XDFP-F36

5.5 V

3.18 mm

12.954 mm

Not Qualified

4194304 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.002 Amp

23.365 mm

25 ns

5962-8601508XA

Texas Instruments

STANDARD SRAM

MILITARY

22

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

1

IN-LINE

2.54 mm

125 Cel

64KX1

64K

-55 Cel

GOLD

DUAL

R-CDIP-T22

5.5 V

4.521 mm

7.62 mm

Not Qualified

65536 bit

4.5 V

e4

27.94 mm

70 ns

5962-8959838MTX

Texas Instruments

STANDARD SRAM

MILITARY

32

DFP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

131072 words

5

8

FLATPACK

1.27 mm

125 Cel

128KX8

128K

-55 Cel

DUAL

R-CDFP-F32

5.5 V

3.175 mm

10.414 mm

Not Qualified

1048576 bit

4.5 V

20.828 mm

20 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.