MILITARY SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-8866204NA	National Semiconductor	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T28			5.84 mm	7.62 mm	Not Qualified	262144 bit			e0						45 ns
5962-8685923YA	Defense Logistics Agency	OTHER SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0					27.555 mm	35 ns
5962-8685909LA	Defense Logistics Agency	OTHER SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0					32.004 mm	35 ns
5962-8685904LA	Defense Logistics Agency	OTHER SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0					32.004 mm	70 ns
5962-8685908LA	Defense Logistics Agency	OTHER SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0					32.004 mm	45 ns
5962-8685910LA	Defense Logistics Agency	OTHER SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Qualified	65536 bit	4.5 V		e0					32.004 mm	35 ns
5962-8685916LA	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0						45 ns
5962-8685924YA	Defense Logistics Agency	OTHER SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE			2.54 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T22		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0					27.555 mm	35 ns
5962-8855202XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.0008 Amp	37.211 mm	70 ns
5962-8855206YA	Defense Logistics Agency	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER				125 Cel		32KX8	32K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N32		5.5 V			Qualified	262144 bit	4.5 V		e0						25 ns
5962-8855203YA	Defense Logistics Agency	STANDARD SRAM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER			1.27 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N32		5.5 V	3.048 mm	11.43 mm	Qualified	262144 bit	4.5 V		e0					13.97 mm	55 ns
5962-8685920YA	Defense Logistics Agency	STANDARD SRAM	MILITARY	22		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		4	IN-LINE				125 Cel		16KX4	16K		-55 Cel	TIN LEAD	DUAL		R-GDIP-T22					Qualified	65536 bit			e0						55 ns
5962-9461110HMA	Defense Logistics Agency	SRAM MODULE	MILITARY		QFP		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		32	FLATPACK			1.27 mm	125 Cel		512KX32	512K		-55 Cel	TIN LEAD	QUAD				5.5 V	5.08 mm	22.352 mm	Qualified	16777216 bit	4.5 V		e0					22.352 mm	17 ns
5962-8855203XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.0008 Amp	37.211 mm	55 ns
5962-8855201XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.0008 Amp	37.211 mm	100 ns
5962-8855204XA	Renesas Electronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T28	1	5.5 V	5.08 mm	15.24 mm	Qualified	262144 bit	4.5 V		e0		240	YES	.0008 Amp	37.211 mm	45 ns
CY7C1441KV33-133AXM	Infineon Technologies	CACHE SRAM	MILITARY	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	125 Cel		1MX36	1M		-55 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	14 mm		37748736 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e4		260			20 mm	6.5 ns
CY7S1061GE30-10BVM	Infineon Technologies	STANDARD SRAM	MILITARY	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		1048576 words				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	125 Cel		1MX16	1M	2.2 V	-55 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm		16777216 bit	2.2 V		e0		220			8 mm	10 ns
HM1-6561B/883	Intersil	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	7.2 mA	256 words		5		4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel	3-STATE	256X4	256	2 V	-55 Cel	TIN LEAD	DUAL		R-GDIP-T18		5.5 V	5.08 mm	7.62 mm	Not Qualified	1024 bit	4.5 V		e0				.00001 Amp		220 ns
7130LA100CB	Renesas Electronics	DUAL-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	2	R-CDIP-T48	1	5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0	NOT SPECIFIED	240		.004 Amp	60.96 mm	100 ns
IDT7130LA100CB	Renesas Electronics	MULTI-PORT SRAM	MILITARY	48	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	1024 words	COMMON	5	5	8	IN-LINE	DIP48,.6	SRAMs	2.54 mm	125 Cel	3-STATE	1KX8	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	2	R-CDIP-T48		5.5 V	4.826 mm	15.24 mm	Not Qualified	8192 bit	4.5 V		e0	20	240		.004 Amp	60.96 mm	100 ns
5962-8861012ZA	Renesas Electronics	MULTI-PORT SRAM	MILITARY	68	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL	ASYNCHRONOUS	315 mA	2048 words	COMMON	5	5	16	GRID ARRAY	PGA68,11X11	SRAMs	2.54 mm	125 Cel	3-STATE	2KX16	2K	4.5 V	-55 Cel	TIN LEAD	PERPENDICULAR	2	S-CPGA-P68	1	5.5 V	5.207 mm	29.464 mm	Qualified	32768 bit	4.5 V		e0		240	YES	.03 Amp	29.464 mm	55 ns
IDT6116LA120TDB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.0002 Amp	32.004 mm	120 ns
X2212DMB	Xicor	NON-VOLATILE SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE				256 words		5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel		256X4	256		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1024 bit			e0						300 ns
X2212DMB/10	Xicor	NON-VOLATILE SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE				256 words		5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel		256X4	256		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1024 bit			e0						300 ns
X2212DMB/5	Xicor	NON-VOLATILE SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC	NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE				256 words		5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel		256X4	256		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	1024 bit			e0						300 ns
5962-8685906XA	Defense Logistics Agency	OTHER SRAM	MILITARY	28	QCCN	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	QUAD		X-CQCC-N28		5.5 V	2.54 mm	11.4554 mm	Qualified	65536 bit	4.5 V		e0					11.4554 mm	55 ns
EDI88130CS55CB	Microsemi	STANDARD SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				125 Cel		128KX8	128K		-55 Cel		DUAL		R-CDIP-T32		5.5 V		10.16 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED				55 ns
IDT6116LA35TDB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	105 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.0002 Amp	32.004 mm	35 ns
5962-8685905XA	Defense Logistics Agency	OTHER SRAM	MILITARY	28	QCCN	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		16KX4	16K		-55 Cel	TIN LEAD	QUAD		X-CQCC-N28		5.5 V	2.54 mm	11.4554 mm	Qualified	65536 bit	4.5 V		e0					11.4554 mm	55 ns
8102406VA	Defense Logistics Agency	STANDARD SRAM	MILITARY	18			CERAMIC, GLASS-SEALED		1	CMOS			PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE				125 Cel		4KX1	4K		-55 Cel		DUAL				5.5 V			Not Qualified	4096 bit	4.5 V								120 ns
IDT6116LA45TDB	Renesas Electronics	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	2 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0			YES	.0002 Amp	32.004 mm	45 ns
STK12C68-5C55M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		8KX8	8K		-55 Cel		DUAL		R-CDIP-T28	1	5.5 V	4.14 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES					.004 Amp	35.56 mm	35 ns
HM1-6514-8	Intersil	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	14 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel	3-STATE	1KX4	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0				.000025 Amp		320 ns
CY7C1441KV33-133BZM	Infineon Technologies	CACHE SRAM	MILITARY	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, LOW PROFILE			1 mm	125 Cel		1MX36	1M		-55 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm	15 mm		37748736 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	260			17 mm	6.5 ns
STK12C68-5L35M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	CHIP CARRIER	LCC28(UNSPEC)	SRAMs	1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		R-CQCC-N28	1	5.5 V	2.29 mm	8.89 mm	Not Qualified	65536 bit	4.5 V	RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES					.004 Amp	13.97 mm	35 ns
5962-8866203MA	Defense Logistics Agency	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		32768 words		5		8	FLATPACK			1.27 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDFP-F28		5.5 V	2.921 mm	12.446 mm	Qualified	262144 bit	4.5 V		e0					18.288 mm	55 ns
6206-100/BXAJC	Motorola	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	5.84 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.02 Amp	37.145 mm	100 ns
93L422DMQB	National Semiconductor	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	256 words		5	5	4	IN-LINE	DIP22,.4	SRAMs	2.54 mm	125 Cel	3-STATE	256X4	256		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	1024 bit			e0						75 ns
CY7C128A-20DMB	Cypress Semiconductor	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.02 Amp	31.877 mm	20 ns
CY7C128A-55DMB	Cypress Semiconductor	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	SRAMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.02 Amp	31.877 mm	55 ns
HT6256DC	Honeywell	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	4 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	225 Cel	3-STATE	32KX8	32K	2.5 V	-55 Cel	TIN LEAD	DUAL		R-CDIP-T28		5.5 V	4.445 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.00033 Amp	35.56 mm	50 ns
STK12C68-5C45M	Simtek	NON-VOLATILE SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	8KX8	8K		-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	4.14 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	EEPROM HARDWARE/SOFTWARE STORE; SOFTWARE RECALL; RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES	e0		240	YES	.004 Amp	35.56 mm	45 ns
STK12C68-5L55M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	CHIP CARRIER	LCC28(UNSPEC)	SRAMs	1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		R-CQCC-N28	1	5.5 V	2.29 mm	8.89 mm	Not Qualified	65536 bit	4.5 V	RETENTION/ENDURANCE = 10 YEARS/100000 CYCLES					.004 Amp	13.97 mm	35 ns
STK14C88-5C45M	Cypress Semiconductor	NON-VOLATILE SRAM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-CDIP-T32	1	5.5 V	4.11 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	EEPROM HARDWARE/SOFTWARE STORE; RETENTION/STORE CYCLE = 10 YEARS/100000	e0				.003 Amp	40.64 mm	45 ns
M38510/29104BJX	Texas Instruments	STANDARD SRAM	MILITARY	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE				125 Cel		2KX8	2K		-55 Cel		DUAL		R-XDIP-T24		5.5 V			Not Qualified	16384 bit	4.5 V								90 ns
SN54ALS217J	Texas Instruments	STANDARD SRAM	MILITARY	20	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words				4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	125 Cel	3-STATE	64X4	64		-55 Cel		DUAL		R-XDIP-T20					Not Qualified					NOT SPECIFIED	NOT SPECIFIED
SNJ54AS871FK	Texas Instruments	MULTI-PORT SRAM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		5		4	CHIP CARRIER	LCC28,.45SQ	Other Memory ICs	1.27 mm	125 Cel		16X4	16		-55 Cel		QUAD		S-CQCC-N28		5.5 V	2.03 mm	11.43 mm	Not Qualified	64 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			11.43 mm	16 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.