Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
90 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e4 |
20 |
260 |
.01 Amp |
18.415 mm |
15 ns |
||||||||||||
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
170 mA |
1024 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
1KX8 |
1K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J52 |
3 |
5.5 V |
5.08 mm |
19.1262 mm |
Not Qualified |
8192 bit |
4.5 V |
INTERRUPT FLAG |
e0 |
YES |
.015 Amp |
19.1262 mm |
25 ns |
||||||||||||
|
Cypress Semiconductor |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
65536 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
2097152 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
3.5 ns |
||||||||||
Cypress Semiconductor |
CACHE SRAM |
COMMERCIAL |
165 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
300 mA |
1048576 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
GRID ARRAY, THIN PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B165 |
3 |
3.6 V |
1.2 mm |
200 MHz |
13 mm |
Not Qualified |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
.07 Amp |
15 mm |
3 ns |
|||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
55 mA |
32768 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
3 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
3 V |
e4 |
30 |
260 |
.0005 Amp |
11.8 mm |
12 ns |
||||||||||||
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
170 mA |
2048 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC52,.8SQ |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQCC-J52 |
3 |
5.5 V |
5.08 mm |
19.1262 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN; INTERRUPT FLAG |
e0 |
YES |
.015 Amp |
19.1262 mm |
25 ns |
||||||||||||
|
Cypress Semiconductor |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
2MX18 |
2M |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
37748736 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
40 |
260 |
.12 Amp |
20 mm |
6.5 ns |
|||||||||||
Cypress Semiconductor |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
2MX36 |
2M |
0 Cel |
MATTE TIN/NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3/e4 |
20 mm |
3 ns |
|||||||||||||||||||||||
|
Cypress Semiconductor |
QDR SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
1290 mA |
4194304 words |
SEPARATE |
1.8 |
1.5/1.8,1.8 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
4MX36 |
4M |
1.7 V |
0 Cel |
BOTTOM |
R-PBGA-B165 |
1.9 V |
1.4 mm |
450 MHz |
15 mm |
Not Qualified |
150994944 bit |
1.7 V |
.46 Amp |
17 mm |
.45 ns |
||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
115 mA |
65536 words |
SEPARATE |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
64KX4 |
64K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.5 mm |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
NO |
.015 Amp |
17.907 mm |
25 ns |
|||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
VFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
60 mA |
8192 words |
COMMON |
1.8 |
1.8/3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA100,10X10,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
1.7 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B100 |
3 |
1.9 V |
1 mm |
6 mm |
Not Qualified |
131072 bit |
1.7 V |
ALSO OPERATES AT 2.5V AND 3V SUPPLY |
e1 |
20 |
260 |
.000006 Amp |
6 mm |
55 ns |
||||||||||
|
Cypress Semiconductor |
NON-VOLATILE SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
3 mA |
8192 words |
3 |
3 |
8 |
SMALL OUTLINE |
SOP8,.25 |
SRAMs |
1.27 mm |
85 Cel |
8KX8 |
8K |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G8 |
3 |
3.6 V |
1.727 mm |
3.8985 mm |
Not Qualified |
65536 bit |
2.7 V |
e4 |
.00015 Amp |
4.889 mm |
||||||||||||||||||
|
Cypress Semiconductor |
NON-VOLATILE SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
2KX8 |
2K |
0 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
2.67 mm |
7.505 mm |
Not Qualified |
16384 bit |
4.5 V |
e4 |
260 |
17.905 mm |
45 ns |
|||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP32,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
18.4 mm |
70 ns |
||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
COMMON |
3 |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1 V |
-40 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
7 mm |
Not Qualified |
2097152 bit |
2.7 V |
e0 |
.0000075 Amp |
7 mm |
70 ns |
|||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
TIN |
DUAL |
R-PDSO-G44 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.2 V |
e3 |
18.415 mm |
70 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
2.997 mm |
11.303 mm |
Not Qualified |
4194304 bit |
2.2 V |
e4 |
20.4465 mm |
70 ns |
||||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
MIL-STD-883 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
524288 words |
COMMON |
3 |
2/3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
1 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
2.7 V |
TTL COMPATIBLE INPUTS/OUTPUTS, LOW STANDBY POWER |
e0 |
.0000055 Amp |
20.95 mm |
70 ns |
|||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
15 mA |
524288 words |
COMMON |
3 |
2.5/3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
8388608 bit |
2.2 V |
e1 |
20 |
260 |
.000004 Amp |
8 mm |
55 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
37 mA |
1048576 words |
COMMON |
3 |
2.5/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP48,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
16777216 bit |
2.2 V |
e0 |
.00001 Amp |
18.4 mm |
45 ns |
|||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
45 mA |
2097152 words |
COMMON |
3 |
2.5/3.3,5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
2MX16 |
2M |
1.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
33554432 bit |
2.2 V |
ALSO OPERATES AT 5V SUPPLY |
e3 |
20 |
260 |
.000017 Amp |
18.4 mm |
55 ns |
||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDSO-G28 |
1 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
30 |
225 |
YES |
.00002 Amp |
17.9324 mm |
70 ns |
|||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G28 |
1 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
YES |
.00005 Amp |
17.9324 mm |
70 ns |
|||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
YES |
.000005 Amp |
36.322 mm |
70 ns |
||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.55 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
MATTE TIN/NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e3/e4 |
11.8 mm |
70 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
AUTOMOTIVE |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.45 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
4.5 V |
e4 |
20 |
260 |
.00001 Amp |
17.9324 mm |
55 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-G28 |
3.6 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
2.7 V |
AUTOMATIC POWER-DOWN |
YES |
18.3896 mm |
70 ns |
|||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.55 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
DUAL |
R-PDSO-G28 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
2.7 V |
11.8 mm |
70 ns |
||||||||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G28 |
1 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
YES |
.015 Amp |
17.9324 mm |
70 ns |
|||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
275 mA |
16384 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
16KX8 |
16K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
2 |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e4 |
20 |
260 |
.0015 Amp |
14 mm |
20 ns |
|||||||||||
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
265 mA |
65536 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE |
e0 |
.0015 Amp |
14 mm |
20 ns |
|||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
65536 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
3 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
3 V |
e3 |
40 |
260 |
.00005 Amp |
14 mm |
25 ns |
|||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
305 mA |
4096 words |
COMMON |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX18 |
4K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
4.5 V |
e4 |
40 |
260 |
.0015 Amp |
14 mm |
15 ns |
|||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
4096 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
FLOW-THROUGH |
e3 |
40 |
260 |
.00005 Amp |
14 mm |
25 ns |
||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
290 mA |
8192 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
4.5 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
14 mm |
25 ns |
|||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
3 V |
AUTOMATIC POWER-DOWN |
e4 |
40 |
260 |
.00005 Amp |
14 mm |
15 ns |
|||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
195 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
3 V |
AUTOMATIC POWER-DOWN |
e4 |
40 |
260 |
.00005 Amp |
14 mm |
20 ns |
||||||||||
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
4096 words |
COMMON |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX18 |
4K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
2 |
S-PQFP-G100 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
.0005 Amp |
14 mm |
25 ns |
||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J32 |
2 |
5.5 V |
3.7592 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
20.955 mm |
15 ns |
|||||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
85 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J32 |
2 |
3.63 V |
3.7592 mm |
10.16 mm |
Not Qualified |
1048576 bit |
2.97 V |
e0 |
.005 Amp |
20.955 mm |
8 ns |
|||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
32KX16 |
32K |
3 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3 |
3.63 V |
1.194 mm |
10.16 mm |
Not Qualified |
524288 bit |
2.97 V |
e0 |
.005 Amp |
18.415 mm |
15 ns |
|||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
AUTOMOTIVE |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
85 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
32KX16 |
32K |
3 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
3.63 V |
1.194 mm |
10.16 mm |
Not Qualified |
524288 bit |
2.97 V |
e4 |
20 |
260 |
.01 Amp |
18.415 mm |
15 ns |
|||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
64KX16 |
64K |
-40 Cel |
DUAL |
R-PDSO-G44 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
18.415 mm |
15 ns |
||||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.0005 Amp |
18.415 mm |
15 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
2 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e4 |
20 |
260 |
.00033 Amp |
18.415 mm |
15 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
AUTOMOTIVE |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
75 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e4 |
20 |
260 |
.015 Amp |
18.415 mm |
20 ns |
|||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
TIN |
DUAL |
R-PDSO-G44 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
18.415 mm |
20 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-J44 |
3 |
5.5 V |
3.7592 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e4 |
40 |
260 |
.01 Amp |
28.575 mm |
10 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.