Maxim Integrated SRAM 546

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1225AB-85	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDMA-P28	1	5.25 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e0			.005 Amp	38.865 mm	85 ns
DS1258Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		131072 words	5		16	MICROELECTRONIC ASSEMBLY				70 Cel	128KX16	128K	0 Cel	TIN LEAD	DUAL	R-XDMA-P40		5.5 V			Not Qualified	2097152 bit	4.5 V	10 YEAR DATA RETENTION	e0					100 ns
DS1250BL-70-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel		DUAL	R-XDMA-U34	1	5.25 V			Not Qualified	4194304 bit	4.75 V					.005 Amp		70 ns
DS1230YP-85	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0			.005 Amp		85 ns
DS1230ABP-85	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e0			.005 Amp		85 ns
DS1250W-150+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-XDMA-P32		3.6 V			Not Qualified	4194304 bit	3 V		e3			.00025 Amp		150 ns
DS1230W-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-T28		3.6 V			Not Qualified	262144 bit	3 V		e0			.00015 Amp		150 ns
DS1270W-150#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words	3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel	2MX8	2M	0 Cel	MATTE TIN	DUAL	R-XDMA-P36		3.6 V			Not Qualified	16777216 bit	3 V		e3					150 ns
DS1225AB-150IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel	8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-PDMA-P28		5.25 V			Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e0			.005 Amp		150 ns
DS1200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	10	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	6 mA	128 words	5		8	IN-LINE	DIP10,.3	SRAMs	2.54 mm	70 Cel	128X8	128	0 Cel	TIN LEAD	DUAL	R-PDIP-T10		5.5 V	4.58 mm	7.62 mm	Not Qualified	1024 bit	4.5 V	DATA RETENTION > 10 YEARS	e0			.0025 Amp	12.7 mm	125 ns
DS1258AB-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel	128KX16	128K	0 Cel	TIN LEAD	DUAL	R-XDMA-P40		5.25 V			Not Qualified	2097152 bit	4.75 V	10 YEAR DATA RETENTION	e0			.01 Amp		70 ns
DS1220AD-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	2KX8	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T24		5.5 V	9.398 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0			.005 Amp	33.782 mm	150 ns
DS1258AB	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5		16	IN-LINE			2.54 mm	70 Cel	128KX16	128K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.25 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	10 YEARS OF DATA RETENTION PERIOD	e0				53.085 mm	70 ns
DS1245WP-100IND+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-XDMA-U34		3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e3			.00025 Amp		100 ns
DS1230Y-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-T28		5.5 V			Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0			.005 Amp		150 ns
DS1258AB-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	70 Cel	128KX16	128K	0 Cel	MATTE TIN	DUAL	R-XDMA-P40		5.25 V			Not Qualified	2097152 bit	4.75 V	10 YEAR DATA RETENTION	e3			.01 Amp		100 ns
DS1258W	Maxim Integrated	NON-VOLATILE SRAM MODULE		40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	3.3		16	IN-LINE			2.54 mm		128KX16	128K		TIN LEAD	DUAL	R-PDIP-T40			9.27 mm	15.24 mm	Not Qualified	2097152 bit		10 YEAR DATA RETENTION PERIOD	e0				53.085 mm	150 ns
DS1235Y-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	262144 bit			e0			.005 Amp		200 ns
DS1225E-120IND	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	8192 words	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0			.005 Amp		120 ns
DS1220Y	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	5		8	IN-LINE			2.54 mm	70 Cel	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-PDIP-T24		5.5 V	9.398 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	BATTERY BACK-UP	e0				33.782 mm	200 ns
DS1249AB-85#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		262144 words	5		8	MICROELECTRONIC ASSEMBLY				70 Cel	256KX8	256K	0 Cel		DUAL	R-XDMA-P32		5.25 V			Not Qualified	2097152 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED
DS1258W-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	3.3		16	MICROELECTRONIC ASSEMBLY				85 Cel	128KX16	128K	-40 Cel	TIN LEAD	DUAL	R-XDMA-T40		3.6 V			Not Qualified	2097152 bit	3 V		e0					150 ns
DS1230AB-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words	5		8	MICROELECTRONIC ASSEMBLY				85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-N28		5.25 V			Not Qualified	262144 bit	4.75 V	BATTERY BACK-UP	e0					200 ns
DS1245WP-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		3.6 V			Not Qualified	1048576 bit	3 V		e0			.00015 Amp		150 ns
DS1230Y-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words	5		8	MICROELECTRONIC ASSEMBLY				85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-N28		5.5 V			Not Qualified	262144 bit	4.5 V	BATTERY BACK-UP	e0					200 ns
DS1225D-70IND	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	8192 words	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0			.005 Amp		70 ns
DS1258W-100IND#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	3.3	3.3	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	85 Cel	128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-XDMA-P40		3.6 V			Not Qualified	2097152 bit	3 V		e3			.00025 Amp		100 ns
DS1225Y-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5		8	IN-LINE			2.54 mm	85 Cel	8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP	e0				38.862 mm	200 ns
DS1265AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-XDMA-P36		5.25 V	10.29 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V	10 YEAR DATA RETENTION PERIOD	e0			.00015 Amp	53.085 mm	70 ns
DS1230Y-FIR	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		32768 words	5		8	MICROELECTRONIC ASSEMBLY				70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0
DS1258AB-70IND#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	5	5	16	MICROELECTRONIC ASSEMBLY	DIP40,.6	SRAMs	2.54 mm	85 Cel	128KX16	128K	-40 Cel	TIN LEAD	DUAL	R-XDMA-P40		5.25 V			Not Qualified	2097152 bit	4.75 V	10 YEAR DATA RETENTION	e0			.01 Amp		70 ns
DS1230YP-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34	1	5.5 V			Not Qualified	262144 bit	4.5 V		e0			.005 Amp		70 ns
DS1250YL-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V		e0			.005 Amp		100 ns
DS1200S	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	6 mA	128 words	5		8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	70 Cel	128X8	128	0 Cel	TIN LEAD	DUAL	R-PDSO-G16		5.5 V	2.65 mm	7.5 mm	Not Qualified	1024 bit	4.5 V	DATA RETENTION > 10 YEARS	e0			.0025 Amp	10.3 mm	125 ns
DS1258AB-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel	128KX16	128K	-40 Cel	TIN LEAD	DUAL	R-XDMA-T40		5.25 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V		e0			.01 Amp	53.085 mm	100 ns
DS1250YL-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V		e0			.005 Amp		100 ns
DS1265AB-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	1048576 words	5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	85 Cel	1MX8	1M	-40 Cel	TIN LEAD	DUAL	R-XDMA-P36		5.25 V			Not Qualified	8388608 bit	4.75 V		e0			.00015 Amp		70 ns
DS1250BL-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	4194304 bit	4.75 V		e0			.005 Amp		100 ns
DS1270AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	MICROELECTRONIC ASSEMBLY				70 Cel	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDMA-P36		5.25 V			Not Qualified	16777216 bit	4.75 V	5 YEAR DATA RETENTION	e0					70 ns
DS1270AB-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words	5		8	IN-LINE			2.54 mm	70 Cel	2MX8	2M	0 Cel	MATTE TIN	DUAL	R-PDIP-P36		5.25 V	10.922 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V	5 YEAR DATA RETENTION	e3				53.213 mm	70 ns
DS1245YP-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	1048576 bit	4.5 V		e0			.005 Amp		70 ns
DS1265W-150+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	70 Cel	1MX8	1M	0 Cel	Matte Tin (Sn)	DUAL	R-XDMA-P36		3.6 V			Not Qualified	8388608 bit	3 V		e3			.00015 Amp		150 ns
DS1258Y-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	40	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	5	5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	85 Cel	128KX16	128K	-40 Cel	TIN LEAD	DUAL	R-XDMA-T40		5.5 V	9.27 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0			.01 Amp	53.085 mm	100 ns
DS1230YP-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0			.005 Amp		70 ns
DS1225D-100	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	8192 words	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0			.005 Amp		100 ns
DS1249W-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	85 Cel	256KX8	256K	-40 Cel	TIN LEAD	DUAL	R-XDMA-T32		3.6 V			Not Qualified	2097152 bit	3 V		e0			.00015 Amp		150 ns
DS1250WP-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words	3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e0			.00015 Amp		150 ns
DS1230ABP-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words	5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e0			.005 Amp		150 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.