Maxim Integrated SRAM 546

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1650ABL-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	85 ns
DS2224T	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		224 words		5		1	CYLINDRICAL				85 Cel		224X1	224		-40 Cel	TIN LEAD	BOTTOM		O-PBCY-T3		5.5 V			Not Qualified	224 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0					1000 ns
DS2422	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	PARALLEL	ASYNCHRONOUS		1024 words	COMMON		3/5	1	SMALL OUTLINE, LOW PROFILE	SOC6,.17	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	1KX1	1K		-40 Cel	TIN LEAD	DUAL	1, (1 LINE)	R-PDSO-C6		5.5 V	1.5 mm	3.76 mm	Not Qualified	1024 bit	2.8 V		e0				3.94 mm	15000 ns
DS2016R-150+	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G24	1	3.5 V	2.65 mm	7.5 mm	Not Qualified	16384 bit	2.7 V	ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY	e3				15.4 mm	250 ns
DS2224	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		224 words	COMMON	5	2/5.5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	224X1	224		-40 Cel	TIN LEAD	BOTTOM	1, (1 LINE)	O-PBCY-T3		5.5 V			Not Qualified	224 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0					1000 ns
DS1345BL-70-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION PERIOD	e0			.00015 Amp	24.5745 mm	70 ns
DS1345ABP-70+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel	MATTE TIN	DUAL		R-XDMA-U34		5.25 V			Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e3			.00015 Amp		70 ns
DS1330YL-70-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION PERIOD				.00015 Amp	24.5745 mm	70 ns
DS2030AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		5		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm	27 mm	Not Qualified	262144 bit	4.75 V		e0				27 mm	70 ns
DS2050W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	4194304 bit	3 V		e0				27 mm	100 ns
DS1345BL-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-U34		5.25 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.75 V	10 YEAR DATA RETENTION	e0			.00015 Amp	24.5745 mm	100 ns
DS1350WP-150+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	MATTE TIN	DUAL		R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e3			.00015 Amp		150 ns
DS2223	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	COMMON	5	2/5.5	1	CYLINDRICAL	SIP3,.1,50	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	256X1	256		-40 Cel	TIN LEAD	BOTTOM	1, (1 LINE)	O-PBCY-T3		5.5 V			Not Qualified	256 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0	20	240			1000 ns
DS2016R-150	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G24	1	3.5 V	2.65 mm	7.5 mm	Not Qualified	16384 bit	2.7 V	ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY	e0				15.4 mm	250 ns
DS2065W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		1MX8	1M		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	8388608 bit	3 V		e0				27 mm	100 ns
DS1330YP-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0			.00015 Amp		70 ns
DS2423	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	PARALLEL	ASYNCHRONOUS		4096 words	COMMON		3/5	1	SMALL OUTLINE, LOW PROFILE	SOC6,.17	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	4KX1	4K		-40 Cel	TIN LEAD	DUAL	1, (1 LINE)	R-PDSO-C6		5.5 V	1.5 mm	3.76 mm	Not Qualified	4096 bit	2.8 V		e0				3.94 mm	15000 ns
DS1609-35	Maxim Integrated	MULTI-PORT SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel	3-STATE	256X8	256	4.5 V	0 Cel	TIN LEAD	DUAL	2, (MUXED)	R-PDIP-T24		5.5 V	5.08 mm	15.24 mm	Not Qualified	2048 bit	2.5 V	MUX ADDRESS DATA LATCH	e0			.0003 Amp	31.75 mm	35 ns
DS1330YP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.5 V			Not Qualified	262144 bit	4.5 V	10 YEARS MINIMUM DATA RETENTION	e0			.00015 Amp		100 ns
DS1758Y-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	131072 words		3	3	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40					Not Qualified	2097152 bit			e0			.003 Amp		150 ns
DS2016S	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G24	1	5.5 V	3.05 mm	8.565 mm	Not Qualified	16384 bit	2.7 V	DATA RETENTION VOLTAGE=5.5V TO 2.0V/TTL COMPATIBLE INPUT AND OUTPUT	e0			.000001 Amp	15.6 mm	100 ns
DS2016-150+	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		3		8	IN-LINE			2.54 mm	85 Cel		2KX8	2K		-40 Cel	MATTE TIN	DUAL		R-PDIP-T24		3.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	2.7 V	ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY	e3				31.75 mm	250 ns
DS1220AD-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.5 V	10.54 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0			.005 Amp	33.785 mm	100 ns
DS1230YP-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0			.005 Amp		150 ns
DS1230ABP-120-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e0			.005 Amp		120 ns
DS1249W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		256KX8	256K		0 Cel	TIN LEAD	DUAL		R-XDMA-P32		3.6 V			Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e0					100 ns
DS1270Y-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	2097152 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP36,.6	SRAMs	2.54 mm	85 Cel		2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-PDMA-P36		5.5 V			Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION PERIOD	e0			.00015 Amp		100 ns
DS1230AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	120 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-P28	1	5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS DATA RETENTION PERIOD	e0			.005 Amp		70 ns
DS1220AD-120-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	2048 words		5	5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel		2KX8	2K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V	9.398 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0			.005 Amp	33.782 mm	120 ns
DS1230ABP-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.25 V			Not Qualified	262144 bit	4.75 V		e0			.005 Amp		70 ns
DS1249AB-85IND#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		262144 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		256KX8	256K		-40 Cel		DUAL		R-XDMA-P32		5.25 V			Not Qualified	2097152 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED
DS1230YP-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.5 V			Not Qualified	262144 bit	4.5 V		e0			.005 Amp		150 ns
DS1250YP-100+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	MATTE TIN	DUAL		R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e3			.0006 Amp		100 ns
DS1235Y-120	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0			.005 Amp		120 ns
DS1249W-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		262144 words		3.3		8	MICROELECTRONIC ASSEMBLY				70 Cel		256KX8	256K		0 Cel	TIN LEAD	DUAL		R-XDMA-P32		3.6 V			Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e0					150 ns
DS1230BL-70-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e0			.005 Amp		70 ns
DS1270AB-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	36		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel		2MX8	2M		-40 Cel	TIN LEAD	DUAL		R-PDMA-P36		5.25 V			Not Qualified	16777216 bit	4.75 V	5 YEAR DATA RETENTION	e0					70 ns
DS1225E-85	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0			.005 Amp		85 ns
DS1250YP-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e0			.005 Amp		70 ns
DS1245W-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-P32	1	3.6 V			Not Qualified	1048576 bit	3 V	10 YEAR DATA RETENTION	e0			.00015 Amp		150 ns
DS1245BL-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.25 V			Not Qualified	1048576 bit	4.75 V		e0			.005 Amp		70 ns
DS1220AB-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	24	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	2048 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	TIN LEAD	DUAL		R-XDMA-P24	1	5.25 V	10.54 mm	15.24 mm	Not Qualified	16384 bit	4.75 V		e0			.005 Amp	33.785 mm	120 ns
DS1245ABP-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.25 V			Not Qualified	1048576 bit	4.75 V		e0			.005 Amp		70 ns
DS1245ABP-70+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		128KX8	128K		0 Cel	MATTE TIN	DUAL		R-XDMA-C34		5.25 V	6.85 mm	23.495 mm	Not Qualified	1048576 bit	4.75 V		e3			.0006 Amp	25.019 mm	70 ns
DS1249Y-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	262144 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		256KX8	256K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32		5.5 V	10.29 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	DATA RETENTION = 10 YRS	e0			.00015 Amp	53.085 mm	100 ns
DS1230BL-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.25 V			Not Qualified	262144 bit	4.75 V		e0			.005 Amp		100 ns
DS1250W-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	32	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-XDMA-P32		3.6 V			Not Qualified	4194304 bit	3 V		e0			.00015 Amp		150 ns
DS1270Y-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	36		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		2MX8	2M		0 Cel	TIN LEAD	DUAL		R-PDMA-P36		5.5 V			Not Qualified	16777216 bit	4.5 V	5 YEAR DATA RETENTION	e0					100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.