Maxim Integrated SRAM 546

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
DS1730YL-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	32768 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		32KX8	32K		0 Cel									Not Qualified	262144 bit						.004 Amp		150 ns
DS1345YP-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0	20	240	.00015 Amp		70 ns
DS1630YL-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	120 ns
DS1350BL-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION				.00015 Amp	24.5745 mm	70 ns
DS2045Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm	27 mm	Not Qualified	1048576 bit	4.5 V		e0				27 mm	100 ns
DS2045W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.005 Amp	27 mm	100 ns
DS2030W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.005 Amp	27 mm	100 ns
DS1609S	Maxim Integrated	MULTI-PORT SRAM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	85 Cel	3-STATE	256X8	256	2.5 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	2, (MUXED)	R-PDSO-G24					Not Qualified	2048 bit			e0			.0003 Amp		50 ns
DS1345WP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	3.6 V			Not Qualified	1048576 bit	3 V		e0			.00015 Amp		100 ns
DS1350ABP-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.25 V			Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION	e0			.00015 Amp		70 ns
DS1350ABP-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.25 V			Not Qualified	4194304 bit	4.75 V		e0			.00015 Amp		70 ns
DS1350ABP-70+	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	MATTE TIN	DUAL		R-XDMA-U34		5.25 V			Not Qualified	4194304 bit	4.75 V		e3			.0006 Amp		70 ns
DS1350YP-C01	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K		0 Cel		DUAL		R-XDMA-U34		5.5 V			Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED
DS1745YL-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	131072 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel									Not Qualified	1048576 bit						.004 Amp		150 ns
DS1609S-50	Maxim Integrated	MULTI-PORT SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	256 words	COMMON	5	5	8	SMALL OUTLINE	SOP24,.4	SRAMs	1.27 mm	70 Cel	3-STATE	256X8	256	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	2, (MUXED)	R-PDSO-G24					Not Qualified	2048 bit			e0			.0003 Amp		50 ns
DS2045AB-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm	27 mm	Not Qualified	1048576 bit	4.75 V		e0				27 mm	100 ns
DS3045W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	1048576 bit	3 V		e0	NOT SPECIFIED	NOT SPECIFIED	.005 Amp	27 mm	100 ns
DS1350YL-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION				.00015 Amp	24.5745 mm	70 ns
DS1345WP-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		3.6 V			Not Qualified	1048576 bit	3 V		e0			.00015 Amp		100 ns
DS1630Y-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION	e0			.005 Amp	37.85 mm	85 ns
DS1350WP-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		512KX8	512K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		3.6 V			Not Qualified	4194304 bit	3 V		e0			.00015 Amp		100 ns
DS2217-120	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	30	SIMM	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			100 mA	131072 words				8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		128KX8	128K		0 Cel		SINGLE		R-PSMA-N30					Not Qualified	1048576 bit						.025 Amp		120 ns
DS1750Y-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	524288 words			3/3.3	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		512KX8	512K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32					Not Qualified	4194304 bit			e0			.004 Amp		200 ns
DS1345YL-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION				.00015 Amp	24.5745 mm	100 ns
DS3030W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	262144 bit	3 V		e0				27 mm	100 ns
DS1646P-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel									Not Qualified	1048576 bit						.004 Amp		150 ns
DS1645Y-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T32		5.5 V	9.52 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0			.005 Amp	42.925 mm	85 ns
DS1350YL-70-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION PERIOD				.00015 Amp	24.5745 mm	70 ns
DS1750YL-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	34			PLASTIC/EPOXY			CMOS				40 mA	524288 words			3/3.3	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel									Not Qualified	4194304 bit						.004 Amp		200 ns
DS1380	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			25 mA	2048 words				8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T24					Not Qualified	16384 bit			e0			.007 Amp		100 ns
DS1345YL-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-U34	1	5.5 V	6.35 mm	21.5265 mm	Not Qualified	1048576 bit	4.5 V	DATA RETENTION = 10 YRS				.00015 Amp	24.4475 mm	70 ns
DS1758Y-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			80 mA	131072 words		3	3	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel		128KX16	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40					Not Qualified	2097152 bit			e0			.003 Amp		200 ns
DS1345YP-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		85 Cel		128KX8	128K		-40 Cel	TIN LEAD	DUAL		R-XDMA-U34		5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0			.00015 Amp		100 ns
DS1630AB-120-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.25 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION	e0			.005 Amp	37.85 mm	120 ns
DS1645Y-70-IND	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	131072 words		5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	85 Cel		128KX8	128K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32					Not Qualified	1048576 bit			e0			.005 Amp		70 ns
DS2016	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	3/5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T24		5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	2.7 V	DATA RETENTION VOLTAGE=5.5V TO 2.0V/TTL COMPATIBLE INPUT AND OUTPUT	e0			.000001 Amp	31.75 mm	100 ns
DS1345YP-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.5 V			Not Qualified	1048576 bit	4.5 V	10 YEAR DATA RETENTION	e0			.00015 Amp		100 ns
DS1350BL-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION				.00015 Amp	24.5745 mm	100 ns
DS1630Y-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION	e0			.005 Amp	37.85 mm	100 ns
DS1350YP-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34		RECTANGULAR	UNSPECIFIED	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	MODULE,34LEAD,1.0	SRAMs		70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-XDMA-U34	1	5.5 V			Not Qualified	4194304 bit	4.5 V	10 YEAR DATA RETENTION	e0			.00015 Amp		70 ns
DS38464	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	72	SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		3.3		40	MICROELECTRONIC ASSEMBLY				70 Cel		64KX40	64K		0 Cel	TIN LEAD	SINGLE		R-XSMA-N72		3.6 V			Not Qualified	2621440 bit	3 V		e0					70 ns
DS2223Y	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words		5		1	SMALL OUTLINE			2.3 mm	85 Cel		256X1	256		-40 Cel	TIN LEAD	DUAL		R-PDSO-G4		5.5 V	1.8 mm	3.5 mm	Not Qualified	256 bit	1.2 V	SELF-TIMED 1-WIRE INTERFACE	e0				6.5 mm	1000 ns
DS2045L-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm	27 mm	Not Qualified	1048576 bit	3 V		e1			.001 Amp	27 mm	100 ns
DS1730Y-150IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words		3	3/3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		3.6 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	2.7 V	DATA RETENTION = 10 YRS	e0			.004 Amp	37.85 mm	150 ns
DS2016-100	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	55 mA	2048 words	COMMON	5	3/5	8	IN-LINE	DIP24,.6	SRAMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T24	1	5.5 V	5.08 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	IT CAN ALSO OPERATES AT 3V	e0			.000001 Amp	31.75 mm	100 ns
DS2430Z	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			.5 mA	32 words			3/5	8	SMALL OUTLINE	SOP8,.25	SRAMs	1.27 mm	70 Cel		32X8	32		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G8					Not Qualified				e0			.00000015 Amp		15000 ns
DS1630ABL-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION				.005 Amp	24.5745 mm	100 ns
DS1350BL-70-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	34	SOJ-I	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J INVERTED	PARALLEL	ASYNCHRONOUS	85 mA	524288 words		5	5	8	SMALL OUTLINE	MODULE,34LEAD,1.0	SRAMs	1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-U34	1	5.25 V	6.35 mm	21.5265 mm	Not Qualified	4194304 bit	4.75 V	10 YEAR DATA RETENTION PERIOD				.00015 Amp	24.5745 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.